The monolithic integrated of four channel 1.55- μm range InGaAsP/InP distributed feedback lasers with a 4 × 1 multimode interference (MMI) optical combiner and semiconductor optical amplifier (SOA) using varied width ridge method, butt-joint technique and holographic exposure is proposed and demonstrated. The average output power and the threshold current are 1.8mW and 35mA, respectively, when the injection current of SOA is 100mA, with over 40-dB side mode suppression ratio (SMSR). The lasing wavelength is 1.55-μm range and 40dB sidemode suppression ratio (SMSR) is obtained. The four channels can operated separately or simultaneously.
A coplanar lumped electroabsorption modulator (Co-LEAM) based on n-type InP substrate is designed and fabricated, which shows a capacitance of 0.62 pF and a high reverse breakdown voltage (VBR) nearly -26 v. Other characteristics are compared with the common LEAM with the back n-electrode.
A strongly guided InP/InGaAsP multimode interference power splitter is designed and simulated by using 3D
FD-BPM method. A 1-by-4 multimode interference power splitter is fabricated in terms of the simulation result. The
device has 40nm available bandwidth and 2.6dB pass band flatness around 1550nm. Furthermore, the insertion loss and
the uniformity of the MMI power splitter is no higher than 10dB and 0.08dB at the designed wavelength 1550nm,
respectively.
A strongly guided InP/InGaAsP multimode interference power splitter is designed and simulated by using 3D
FD-BPM method. A 1-by-4 multimode interference power splitter is fabricated in terms of the simulation result. The
device has 40nm available bandwidth and 2.6dB pass band flatness around 1550nm. Furthermore, the insertion loss is no
higher than 10dB at the designed wavelength 1550nm.
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