Tailoring of the properties of orientation-patterned (OP) GaAs and GaP by growing mixed ternary compounds by heteroepitaxy will enable pumping by Er-fiber laser systems at 1.56 µm and idler wavelengths beyond the mid-IR limit of GaP. We will present transmission measurements and bandgap estimations related to potential two-photon absorption with 167-322-µm thick unpattrened layers of different composition with P-content of x = 0%, 33%, 39.8%, 48.3%, and 100%, after separating them from the substrate and chemically polishing to a roughness of 0.8 nm. Except for pure GaP, which exhibits also an indirect bandgap, the estimated bandgaps are well described by the empirical relation 1.424 + 1.172x + 0.186x2 for the direct band-gap, where 1.424 eV stand for GaAs. A strong absorption band is seen around 13.3 µm in GaP (present also in all ternary samples) and at 19.1 µm in GaAs. However, the parasitic absorption band in the 2-4 µm range known for pure GaP, is absent in the ternary compounds.
We present a nanosecond, non-resonant optical parametric oscillator (NRO) based on a 20 mm long periodically-poled LiNbO3 (PPLN) crystal operating at 30-70 kHz. Pumping with a nanosecond Nd:YVO4 laser at 1064 nm in a double-pass configuration, the signal plus idler average output power reached 1.2 W for a pump level of 4 W (at 35 kHz repetition rate). Narrowband seeding with a Tm-fiber laser is employed to narrow the linewidths of the signal to 0.8 nm and the idler to 2 nm. Continuous-wave seed levels as low as 2 mW were sufficient to produce the effect which means that this technique could be useful for single-frequency operation using DFB seed laser diodes. At higher pump power levels > 4 W, the linewidth narrowing effect produced by the seeding was insufficient to prevent broader linewidth operation of the NRO signal and idler outputs. Pumping the NRO at higher repetition rates to scale the average output power of the NRO whilst remaining in the narrow linewidth operation mode is discussed.
We present a narrowband, non-resonant optical parametric oscillator based on 5-mm thick Rb-doped periodically-poled KTiOPO4 (PPKTP) operating in the high-energy/low repetition-rate regime. An uncoated volume Bragg grating (VBG) is employed as one of the cavity mirrors reflecting only the signal whereas the other cavity mirror is reflecting only the idler. Pumping by a Nd:YAG laser at 1.0642 μm in a double-pass, the signal plus idler output energy reached almost 5 mJ at a repetition rate of 100 Hz corresponding to a conversion efficiency of ⁓26%. Both signal and idler are narrowband with full width at half maximum (FWHM) of 0.5 nm at 1942 nm and 0.76 nm at 2355 nm, respectively.
We perform transmission measurements in the 0.3-25 μm spectral range on thin (0.2-0.4-mm) GaAsP layers grown by Hydride Vapor Phase Epitaxy (HVPE) on plain (100) GaAs substrates. The purpose is to evaluate the evolution of the cut-off wavelengths in the visible (VIS) and in the mid-IR spectral range. The former is important in order to assess the potential of such mixed ternary quasi-phase-matching structures for pumping by intermediate laser systems (compared to pure GaP and GaAs), such as Cr4+ and Er3+ lasers emitting in the 1.5-1.6 μm spectral range. The latter is essential to see how the presence of P shortens the mid-IR clear transparency cut-off wavelength of GaAs due to phonon absorption. In all cases the substrates have been completely removed by polishing prior to the measurements. The multiple-reflection effect, which is considerable for such high refractive index materials has been taken into account for the incoherent light source of the spectrophotometer both in the region of clear transparency and in the presence of absorption. The actual sample thickness is derived from the observed interference fringes and the refractive index which is interpolated using available data on GaAs and GaP. With this information we calculate the wavelength dependent absorption coefficient. For some compositions, e.g. 33% P, we observe nice clear transmission plateau with almost vanishing absorption/scatter losses. Further increase of the P content shifts the VIS cut-off limit to shorter wavelengths but has negligible effect on the clear transparency upper limit which is around 13 μm in the mid-IR.
We report on sub-100-fs pulse generation from a passively mode-locked laser based on a novel disordered crystal,
lanthanum calcium lithium niobium gallium garnet (LCLNGG) codoped with thulium (Tm3+) and holmium (Ho3+) ions.
In the continuous-wave regime, the Tm,Ho:LCLNGG laser generated a maximum output power of 350 mW at
2080.5 nm with a slope efficiency of 23.8%. By using a Lyot filter, the laser wavelength was continuously tuned over a
broad range of ~210 nm (1904.1 – 2114.1 nm). Soliton mode-locking was initiated and stabilized by a transmission-type
single-walled carbon nanotube saturable absorber. Pulses as short as 63 fs were obtained at a central wavelength of
2072.7 nm with an average output power of 63 mW at a pulse repetition rate of ~102.5 MHz.
We report on the continuous-wave (CW) and Kerr-lens mode-locked (KLM) operation of an ytterbium (Yb3+) doped orthorhombic calcium rare-earth borate Yb:Ca3Gd2(BO3)4 (Yb:GdCB) disordered crystal. A high quality 10 at.% Yb:GdCB crystal was grown by the Czochralski method. An X-shaped astigmatically compensated linear cavity was employed for evaluating the CW and KLM laser performance of an a-cut (sp. gr. Pnma) Yb:GdCB crystal. Pumping with a single-transverse mode, fiber-coupled diode laser at 976 nm, a maximum CW output power of 548 mW was obtained at 1049 nm with a slope efficiency of 67.8% and a linear laser polarization (E || b). A broad wavelength tuning range of ~88 nm (1001 – 1089 nm) was achieved in the CW regime. Stable KLM operation was initiated and stabilized by a semiconductor saturable absorber mirror (SESAM). Nearly Fourier-transform-limited pulses as short as 33 fs were generated at a central wavelength of 1055.3 nm with an average output power of 98 mW for a pulse repetition rate of ~67.3 MHz.
We report on the Czochralski growth, polarized optical spectroscopy, thermal lensing and diode-pumped laser operation of a Yb3+-doped monoclinic “mixed” calcium rare-earth oxoborate crystal, Gd0.235Y0.672Yb0.093Ca4O(BO3)3 (Yb:GdYCOB). The absorption, stimulated-emission and gain cross-section spectra are determined for light polarizations E || X, Y, Z. The maximum σSE above the zero-phonon line is 0.61 x 10-20 cm2 at 1022.4 nm (for E || X) and the luminescence lifetime of Yb3+ ions is 2.37 ms. The gain spectra of Yb:GdYCOB extend beyond 1.15 μm. The thermal lens is studied for the three principal cuts, X-cut, Y-cut and Z-cut, and it is found to be positive. A continuous-wave diode-pumped X-cut Yb:GdYCOB laser generates 9.27 W at ~1050 nm with a slope efficiency of 68.2%, linear laser polarization E || X and nearly diffraction-limited beam (M2x,y < 1.16). A continuous wavelength tuning from 1020.9 to 1086.3 nm (a tuning range of ~65 nm) is achieved for the Z-cut crystal and the laser polarization E || X.
A comparative study of three disordered calcium niobium gallium garnet (CNGG)-type crystals codoped with Tm3+ and Ho3+ ions is performed: (i) without host modifiers (CNGG), (ii) with Li+ cations added (CLNGG), and (iii) with Li+ and La3+ cations added (LCLNGG), all grown by the Czochralski method. The crystals exhibit inhomogeneously broadened luminescence bands extending beyond 2.1 μm. A diode-pumped Tm,Ho:LCLNGG laser generates 562 mW at 2082 nm with a slope efficiency of 17.4% and a laser threshold of 0.46 W. A continuous wavelength tuning between 1904.1 and 2121.1 nm (tuning range: 217 nm) is achieved with this new garnet compound. The Tm,Ho:LCLNGG crystal is promising for generation of ultrashort pulses from mode-locked lasers emitting above 2 μm.
We report on efficient mid-IR difference-frequency generation (DFG) at ~8 μm in orientation-patterned GaAs (OPGaAs), by mixing the signal and idler fields inside a nanosecond, singly-resonant, periodically-poled MgO-doped LiNbO3 optical parametric oscillator (OPO). The temperature and spectral acceptance bandwidths as well as the DFG output performance are compared for two OP-GaAs samples with different lengths. Temperature tuning of the DFG is studied by implementing a transversely chirped Volume Bragg Grating (VBG) as one of the OPO cavity mirrors for the signal wave. The maximum DFG average power amounts to 215 mW at 8.15 μm for a pulse repetition rate of 35 kHz. The corresponding overall optical conversion efficiency from 1 to 8 μm is ~1.1%.
Tm,Ho co-doped disordered calcium niobium gallium garnet (CNGG) crystals are investigated as a novel gain medium for mode-locked lasers near 2 μm. With a GaSb-based semiconductor saturable absorber mirror (SESAM) and chirped mirrors for dispersion compensation such a laser is mode-locked at a repetition rate of 89.3 MHz. For a 5% output coupler, a maximum average output power of 157 mW is obtained with a pulse duration of 170 fs (28-nm broad spectrum centered at 2.075 μm, leading to a time-bandwidth product of 0.331). With a 0.5% output coupler, 73-fs pulses are generated at 2.061 μm with a spectral width of 62 nm (time-bandwidth product of 0.320) and an average output power of 36 mW.
Mode-locked lasers emitting ultrashort pulses in the 2-μm spectral range at high (100-MHz) repetition rates offer unique opportunities for time-resolved molecular spectroscopy and are interesting as pump/seed sources for parametric frequency down-conversion and as seeders of ultrafast regenerative laser amplifiers. Passively mode-locked lasers based on Tm3+- and Ho3+-doped bulk solid-state materials have been under development for about a decade. In 2009 we demonstrated the first steady-state operation of such a Tm:KLu(WO4)2 laser using a single-walled carbon nanotube (SWCNT) saturable absorber (SA), generating 10-ps pulses at 1.95 μm. In 2012 this laser produced 141-fs pulses at 2.037 μm. More recently, the study of numerous active media with different SAs resulted in the generation of sub-100-fs (sub-10-optical-cycle) pulses. Materials with broad and smooth spectral gain profile were selected, naturally emitting above 2 μm to avoid water vapor absorption/dispersion effects, including anisotropic materials, strong crystal-field distortion in hosts that do not contain rare-earths, crystals with structural or compositional (i.e. mixed compounds) disorder that exhibit inhomogeneous line broadening, mixed laser ceramics, and Tm,Ho-codoping of ordered and disordered crystals and ceramics. A broad absorption band in semiconducting SWCNTs spans from 1.6 to 2.1-μm whereas the absorption of graphene extends into the mid-IR and scales for multilayers, increasing the modulation depth. Compared to GaSb-based semiconductor SA mirrors (SESAMs), the carbon nanostructures exhibit broader spectral response and can be fabricated by simpler and inexpensive techniques. Chirped mirrors were implemented for groupvelocity dispersion compensation, to generate the shortest pulses, down to 52 fs at 2.015 μm.
The exceptional power scalability of Yb lasers has enabled the development of pulsed optical parametric amplifiers (OPA’s) operating at the short-wave edge of the mid-IR (MIR) with average powers beyond 10 W simultaneously providing peak powers in excess of 1 GW. Further wavelength extension into the longer-wave MIR is enabled by novel wide-bandgap non-oxide nonlinear crystals that can be pumped directly at 1 μm without detrimental one- and twophoton absorption of pump radiation. Eliminating the usual difference frequency generation step in producing MIR pulses above 5 μm could potentially increase the conversion efficiency of parametric down-conversion devices and enable a significant boost in the attainable average and peak power. Despite their utmost importance, material properties related to ultrafast laser-induced damage in nonlinear crystals are rarely investigated in the corresponding laser parameter range. In order to help unravel the complicated interplay of photorefractive effects, thermal lensing, and selffocusing/ defocusing affecting the beam quality and catastrophic breakdown threshold in MIR OPA’s, we present the nonlinear index of refraction at 1 μm of KTiOAsO4, LiGaS2, and BaGa4S7. The reported data provide crucial design parameters for the development of high-average-power MIR OPA’s. As examples, (i) a 100-kHz, 1.55/3.1 μm dual-beam OPA delivering multi-GW peak power in each beam and a total average power of 55 W and (ii) a 100-kHz, sub-100-fs, 1-μm-pumped OPA tunable in the 5.7-10.5-μm range are briefly presented.
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