Dr. Ling Chieh Lin Profile

Dr. Ling Chieh Lin

at United Microelectronics Corp

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Publications (5)

Proceedings Article | 15 March 2006 Paper

Improvement of OPC accuracy for 65nm node contact using KIF

Te Hung Wu, C. L. Lin, Ming Jui Chen, Zen Hsiang Tsai, Chen Yu Ao, H. C. Thuang, Jian Shin Liou, Chuen Huei Yang, Ling Chieh Lin

Proceedings Volume 6155, 61550M (2006) https://doi.org/10.1117/12.657900

KEYWORDS: Optical proximity correction, Data modeling, Scanners, Lithography, Photomasks, Projection systems, Optical calibration, Calibration, Lithographic illumination, Critical dimension metrology

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Proceedings Article | 12 May 2005 Paper

Novel illumination apertures for resolution-enhanced technology and through-pitch critical dimension control

I. Huang, Ling Lin, Chin Lin

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.599559

KEYWORDS: Photomasks, Optical proximity correction, Fiber optic illuminators, Resolution enhancement technologies, SRAF, Semiconducting wafers, Cadmium, Lithography, Critical dimension metrology, Manufacturing

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Proceedings Article | 10 May 2005 Paper

The performances of different overlay mark types at 65nm node on 300-mm wafers

H. Tseng, Ling-Chieh Lin, I. Huang, Benjamin Lin, Chin-Chou Huang, Chien-Jen Huang

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.598424

KEYWORDS: Overlay metrology, Chemical mechanical planarization, Metrology, Semiconducting wafers, Tungsten, Optical alignment, Manufacturing, Metals, Image processing, Optical design

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The integrated circuit (IC) manufacturing factories have measured overlay with conventional "box-in-box" (BiB) or "frame-in-frame" (FiF) structures for many years. Since UMC played as a roll of world class IC foundry service provider, tighter and tighter alignment accuracy specs need to be achieved from generation to generation to meet any kind of customers' requirement, especially according to International Technology Roadmap for Semiconductors (ITRS) 2003 METROLOGY section1. The process noises resulting from dishing, overlay mark damaging by chemical mechanism polishing (CMP), and the variation of film thickness during deposition are factors which can be very problematic in mark alignment. For example, the conventional "box-in-box" overlay marks could be damaged easily by CMP, because the less local pattern density and wide feature width of the box induce either dishing or asymmetric damages for the measurement targets, which will make the overlay measurement varied and difficult. After Advanced Imaging Metrology (AIM) overlay targets was introduced by KLA-Tencor, studies in the past shown AIM was more robust in overlay metrology than conventional FiF or BiB targets. In this study, the applications of AIM overlay marks under different process conditions will be discussed and compared with the conventional overlay targets. To evaluate the overlay mark performance against process variation on 65nm technology node in 300-mm wafer, three critical layers were chosen in this study. These three layers were Poly, Contact, and Cu-Metal. The overlay targets used for performance comparison were BiB and Non-Segmented AIM (NS AIM) marks. We compared the overlay mark performance on two main areas. The first one was total measurement uncertainty (TMU)3 related items that include Tool Induced Shift (TIS) variability, precision, and matching. The other area is the target robustness against process variations. Based on the present study AIM mark demonstrated an equal or better performance in the TMU related items under our process conditions. However, when non-optimized tungsten CMP was introduced in the tungsten contact process, due to the dense grating line structure design, we found that AIM mark was much more robust than BiB overlay target.

Proceedings Article | 4 May 2005 Paper

Global planarization of gap-filling process for low-k dual damascene applications

Ruei Hung Hsu, I. Huang, Ling Chieh Lin, Benjamin Szu-Min Lin

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.600408

KEYWORDS: Coating, Etching, Semiconducting wafers, Lithography, Photoresist materials, Optics manufacturing, Optical lithography, Copper, Scanning electron microscopy, Critical dimension metrology

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Proceedings Article | 4 May 2005 Paper

Advanced microlithography process with multiple-chemical trim technology

Te Hung Wu, Ling Chieh Lin, C. L. Lin

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.598447

KEYWORDS: Line width roughness, Chemical reactions, Photoresist processing, Line edge roughness, Critical dimension metrology, Image processing, Resolution enhancement technologies, Semiconducting wafers, Optical lithography, Coating

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