Dr. Lisa P. Allen
Technology Programs Director
Profile Summary

Dr. Lisa P. Allen has over 24 years experience in the research and development of advanced semiconductor materials. She has served as the Technology Programs Director of Galaxy Compound Semiconductors, Inc. since 2002. Her specialties include substrate modification (bulk growth, epitaxy, ion implantation, etc.), radiation hardness, and small business initiation & growth. At Galaxy, Lisa works closely with industry and government laboratories to further research and develop InSb and GaSb substrate material for imaging and stealth technology. Previous to her role at Galaxy, Dr. Allen was the Technology Programs Director at Epion where she worked developing semiconductor gas cluster ion beam (GCIB) technology for a wide range of semiconductor and optical materials. Dr. Allen worked for 10 years as the Technology Programs Director at Ibis Technology Corporation where she was the author and Principal Investigator of new programs for radiation hardened, ion implanted silicon-on-insulator substrate improvement. Dr. Allen is a graduate of the Massachusetts Institute of Technology (1981) and the University of California at Berkeley / Lawrence Berkeley Lab (1987) where she majored in Materials Science and Metallurgical Engineering with a minor in Physics. She has five patents regarding ion implantation of silicon, SOI fabrication, and gas cluster ion beam processing. Lisa has several international awards (American Physical Society, Materials Research Society, and TMS) for her research in semiconductor processing. She was the peer-elected 1998 General Chair of the IEEE International Silicon-on-Insulator Conference and served as a member of the Executive Committee for the IEEE Nuclear and Space Radiation Effects Conference. She presently serves as a member of the Massachusetts Institute of Technology Educational Council. A Senior Member of the IEEE, Dr. Allen has over 125 publications in peer reviewed research journals and conference proceedings.
Publications (8)

Proceedings Article | 31 May 2012 Paper
Proc. SPIE. 8353, Infrared Technology and Applications XXXVIII
KEYWORDS: Gallium antimonide, Semiconducting wafers, Manufacturing, Surface roughness, Crystals, Surface finishing, Sensors, Staring arrays, Oxides, Atomic force microscopy

Proceedings Article | 21 January 2012 Paper
Proc. SPIE. 8268, Quantum Sensing and Nanophotonic Devices IX
KEYWORDS: Digital signal processing, Gallium antimonide, Surface finishing, Oxides, Semiconducting wafers, Antimony, Polishing, Gallium, Chemical mechanical planarization, Laser sintering

Proceedings Article | 21 January 2012 Paper
Proc. SPIE. 8268, Quantum Sensing and Nanophotonic Devices IX
KEYWORDS: Gallium antimonide, Semiconducting wafers, Surface finishing, Laser sintering, Oxides, Manufacturing, Particles, Air contamination, Polishing, Surface roughness

Proceedings Article | 21 May 2011 Paper
Proc. SPIE. 8012, Infrared Technology and Applications XXXVII
KEYWORDS: Gallium antimonide, Surface finishing, Polishing, Oxides, Semiconducting wafers, Laser sintering, Surface roughness, Infrared detectors, Atomic force microscopy, Chemical analysis

Proceedings Article | 25 September 2009 Paper
Proc. SPIE. 7487, Optical Materials in Defence Systems Technology VI
KEYWORDS: Chemical mechanical planarization, Oxides, Crystals, Surface finishing, Antimony, Atomic force microscopy, Homoepitaxy, Radium, Polishing, Surface roughness

Showing 5 of 8 publications
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