Dr. Long He Profile

Dr. Long He

Project Manager at SUNY Poly SEMATECH

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Author

Publications (14)

Proceedings Article | 17 April 2014 Paper

Production of EUV mask blanks with low killer defects

Alin Antohe, Patrick Kearney, Milton Godwin, Long He, Arun John Kadaksham, Frank Goodwin, Al Weaver, Alan Hayes, Steve Trigg

Proceedings Volume 9048, 90480H (2014) https://doi.org/10.1117/12.2048541

KEYWORDS: Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Inspection, Ruthenium, Failure analysis, Transmission electron microscopy, Ions, Silica, Multilayers

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Proceedings Article | 11 May 2009 Paper

Thorough characterization of an EUV mask

Hiroyuki Mizuno, Gregory McIntyre, Chiew-seng Koay, Martin Burkhardt, Long He, John Hartley, Corbet Johnson, Sudharshanan Raghunathan, Kenneth Goldberg, Iacopo Mochi, Bruno La Fontaine, Obert Wood

Proceedings Volume 7379, 73790J (2009) https://doi.org/10.1117/12.824260

KEYWORDS: Photomasks, Scanning electron microscopy, Line edge roughness, Extreme ultraviolet, Atomic force microscopy, Mirrors, Reflectivity, Extreme ultraviolet lithography, Semiconducting wafers, Optical proximity correction

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Proceedings Article | 18 March 2009 Paper

Protection efficiency of a standard compliant EUV reticle handling solution

Long He, John Lystad, Stefan Wurm, Kevin Orvek, Jaewoong Sohn, Andy Ma, Patrick Kearney, Steve Kolbow, David Halbmaier

Proceedings Volume 7271, 72710I (2009) https://doi.org/10.1117/12.814304

KEYWORDS: Reticles, Extreme ultraviolet, Inspection, Photomasks, Particles, Extreme ultraviolet lithography, Silica, Semiconducting wafers, Standards development, Contamination

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Proceedings Article | 21 March 2008 Paper

Status of EUV reticle handling solution in meeting 32 nm HP EUV lithography

Long He, Stefan Wurm, Phil Seidel, Kevin Orvek, Ernie Betancourt, Jon Underwood

Proceedings Volume 6921, 69211Z (2008) https://doi.org/10.1117/12.773278

KEYWORDS: Reticles, Extreme ultraviolet, Photomasks, Particles, Inspection, Extreme ultraviolet lithography, Contamination, Robotics, EUV optics, Manufacturing

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Proceedings Article | 3 May 2007 Paper

EUV mask infrastructure challenges

Stefan Wurm, Phil Seidel, Chris Van Peski, Long He, Hakseung Han, Pat Kearney, Wonil Cho

Proceedings Volume 6533, 65330Z (2007) https://doi.org/10.1117/12.737154

KEYWORDS: Photomasks, Extreme ultraviolet, Inspection, Reticles, Defect inspection, Extreme ultraviolet lithography, Manufacturing, Semiconducting wafers, Standards development, Printing

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Proceedings Article | 15 March 2007 Paper

EUVL mask dual pods to be used for mask shipping and handling in exposure tools

Yoshio Gomei, Kazuya Ota, John Lystad, Dave Halbmair, Long He

Proceedings Volume 6517, 65170W (2007) https://doi.org/10.1117/12.711296

KEYWORDS: Photomasks, Particles, Extreme ultraviolet lithography, Particle contamination, Semiconducting wafers, Pellicles, Prototyping, Lithography, Quartz, Ultraviolet radiation

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Proceedings Article | 15 March 2007 Paper

Status and path to a final EUVL reticle-handling solution

Long He, Kevin Orvek, Phil Seidel, Stefan Wurm, Jon Underwood, Ernie Betancourt

Proceedings Volume 6517, 65171O (2007) https://doi.org/10.1117/12.712872

KEYWORDS: Reticles, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Particles, Pellicles, Inspection, Robotics, Contamination, Standards development

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Proceedings Article | 20 May 2006 Paper

Clean mask shipping module development and demonstration for EUVL masks and blanks

Pei-Yang Yan, Long He, Andy Ma, Kevin Orvek

Proceedings Volume 6283, 62830M (2006) https://doi.org/10.1117/12.681847

KEYWORDS: Particles, Photomasks, Reticles, Inspection, Extreme ultraviolet lithography, Pellicles, Extreme ultraviolet, Packaging, Metrology, Neodymium

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Proceedings Article | 6 December 2004 Paper

Can we afford to replace chrome?

Gilbert Shelden, Long He, Scott Hector, Walt Trybula

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.565124

KEYWORDS: Photomasks, Manufacturing, Etching, Extreme ultraviolet lithography, Reflectivity, Yield improvement, Inspection, Optical lithography, Semiconducting wafers, Chromium

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Chrome-based absorbers have been the mainstay of the photomask industry for three decades. While chrome is attractive because of its durability and opacity, it conversely poses challenges for etch and repair. Due to large capital investments, any new absorber must be designed to work with existing scanners, mask writers, and mask inspection tools. Furthermore changing absorber materials may not improve defect control in mask blank fabrication, which is a paramount concern in blank fabrication. Consequently, blank manufacturers are reluctant to change from chrome. In terms of return on investment (ROI), the only driver to switch technologies is achieving higher mask and wafer yields. This is a reasonable assumption as both etch and repair tool suppliers believe a non-chrome material like tantalum (Ta) compounds would significantly improve their capabilities with known technologies. A high level estimate shows that with even aggressive improvement assumptions, a 100% conversion from chrome does not save money. Based on the current International SEMATECH (ISMT) cost of ownership (COO) model and improved yields for critical dimension (CD) and defects, a case can be made for converting at and below 100 nm ground rules. An industry wide conversion from chrome to a non-chrome absorber is estimated to cost $100M. By contrast, blank suppliers are reportedly spending "multiple" millions of dollars to improve chrome per year. A widespread concern is whether binary optical masks have enough life left to provide sufficient ROI. Optical lithography will continue to be of use in the foreseeable future. Even as leading-edge production moves to new technology, the main manufacturing volumes will continue to create significant demand for masks for 100 nm to 45 nm for many years. With the industry currently pushing extreme ultraviolet lithography (EUVL), the best situation would be for EUVL and optical lithography to choose the same absorber material. This creates a winning situation for the industry independent of EUVL implementation timing. Today Ta-based films are a reasonable choice.

Proceedings Article | 17 December 2003 Paper

Phase-enhanced DUV inspection of alternating phase-shift reticles

Larry Zurbrick, Maciej Rudzinski, Long He, Kurt Kimmel, Alvina Williams

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518143

KEYWORDS: Inspection, Reticles, Defect detection, Manufacturing, Photomasks, Deep ultraviolet, Phase contrast, Quartz, Computer aided design, Phase shifts

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Proceedings Article | 28 May 2003 Paper

Inspection of alternating phase-shift masks through the use of phase contrast techniques

Larry Zurbrick, Maciej Rudzinski, Stanley Stokowski, Long He, Kurt Kimmel, Nishrin Kashwala

Proceedings Volume 5148, (2003) https://doi.org/10.1117/12.515102

KEYWORDS: Inspection, Quartz, Defect detection, Phase contrast, Photomasks, Etching, Lithography, Detection and tracking algorithms, Phase shift keying, Phase shifts

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Proceedings Article | 27 December 2002 Paper

Alternating phase-shift mask inspection through the use of phase contrast enhancement techniques

Larry Zurbrick, Maciej Rudzinski, Stanley Stokowski, Long He, Kurt Kimmel, Nishrin Kashwala

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.468086

KEYWORDS: Inspection, Quartz, Defect detection, Photomasks, Phase contrast, Lithography, Etching, Manufacturing, Binary data, Phase shifts

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Proceedings Article | 5 September 2001 Paper

CF4/O2 plasma simulation and comparison with quartz etch experiment

Han-Ming Wu, Long He, Jeff Farnsworth, Gang Liu

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438386

KEYWORDS: Plasma, Ions, Etching, Plasma etching, Oxygen, Reactive ion etching, Reticles, Quartz, Chemistry, Fluorine

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Proceedings Article | 22 January 2001 Paper

Technological challenges in implementation of alternating phase-shift mask

Wilman Tsai, Qi-De Qian, Ken Buckmann, Wen-Hao Cheng, Long He, Brian Irvine, Marilyn Kamna, Yulia Korobko, Michael Kovalchick, Steven Labovitz, R. Talevi, Jeff Farnsworth

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410720

KEYWORDS: Etching, Photomasks, Inspection, Image processing, Critical dimension metrology, Optical lithography, Semiconducting wafers, Plasma etching, Phase shifts, Isotropic etching

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Showing 5 of 14 publications

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