Mr. Louis M. Kindt Profile

Louis M. Kindt

at GLOBALFOUNDRIES Inc

SPIE Involvement:

Author

Publications (23)

Proceedings Article | 9 July 2015 Paper

Paper

Exploring EUV mask backside defectivity and control methods

Christina Turley, Jed Rankin, Louis Kindt, Mark Lawliss, Luke Bolton, Kevin Collins, Lin Cheong, Ravi Bonam, Richard Poro, Takeshi Isogawa, Eisuke Narita, Masayuki Kagawa

Proceedings Volume 9658, 965811 (2015) https://doi.org/10.1117/12.2197383

KEYWORDS: Photomasks, Extreme ultraviolet, Manufacturing, Resistance, Particles, Scanners, Extreme ultraviolet lithography, Optical inspection, Inspection, Reflectivity

Read Abstract +

Proceedings Article | 19 March 2015 Paper

Paper

EUV mask cleans comparison of frontside and dual-sided concurrent cleaning

Lin Lee Cheong, Louis Kindt, Christina Turley, Dusty Leonhard, John Boyle, Chris Robinson, Jed Rankin, Daniel Corliss

Proceedings Volume 9422, 94221M (2015) https://doi.org/10.1117/12.2085913

KEYWORDS: Photomasks, Ruthenium, Particles, Extreme ultraviolet, Reflectivity, Surface roughness, Extreme ultraviolet lithography, Scanners, EUV optics, Pellicles

Read Abstract +

Proceedings Article | 8 October 2014 Paper

Paper

EUV mask black border evolution

Christina Turley, Ravi Bonam, Emily Gallagher, Jonathan Grohs, Masayuki Kagawa, Louis Kindt, Eisuke Narita, Steven Nash, Yoshifumi Sakamoto

Proceedings Volume 9235, 923513 (2014) https://doi.org/10.1117/12.2070047

KEYWORDS: Photomasks, Etching, Extreme ultraviolet, Molybdenum, Reflectivity, Silicon, Semiconducting wafers, Transmission electron microscopy, Multilayers, Neodymium

Read Abstract +

Proceedings Article | 14 October 2011 Paper

Paper

The trade-offs between thin and thick absorbers for EUV photomasks

Gregory McIntyre, Christian Zuniga, Emily Gallagher, John Whang, Louis Kindt

Proceedings Volume 8166, 81663U (2011) https://doi.org/10.1117/12.898912

KEYWORDS: Photomasks, Extreme ultraviolet, Critical dimension metrology, Nanoimprint lithography, Semiconducting wafers, Line width roughness, Reflectivity, Phase shifts, Stray light, Data modeling

Read Abstract +

Proceedings Article | 14 October 2011 Paper

Paper

High resolution mask process and substrate for 20nm and early 14nm node lithography

Tom Faure, Satoshi Akutagawa, Karen Badger, Louis Kindt, Jun Kotani, Takashi Mizoguchi, Satoru Nemoto, Kazunori Seki, Tasuku Senna, Richard Wistrom, Shinich Igarashi, Yukio Inazuki, Kazuhiro Nishikawa, Hiroki Yoshikawa

Proceedings Volume 8166, 816617 (2011) https://doi.org/10.1117/12.898889

KEYWORDS: Photomasks, SRAF, Opacity, Inspection, Chromium, Etching, Optical proximity correction, Photoresist processing, Resistance, Lithography

Read Abstract +

The lithography challenges posed by the 20 nm and 14 nm nodes continue to place strict minimum feature size requirements on photomasks. The wide spread adoption of very aggressive Optical Proximity Correction (OPC) and computational lithography techniques that are needed to maximize the lithographic process window at 20 nm and 14 nm groundrules has increased the need for sub-resolution assist features (SRAFs) down to 50 nm on the mask. In addition, the recent industry trend of migrating to use of negative tone develop and other tone inversion techniques on wafer in order to use bright field masks with better lithography process window is requiring mask makers to reduce the minimum feature size of opaque features on the reticle such as opaque SRAFs. Due to e-beam write time and pattern fidelity requirements, the increased use of bright field masks means that mask makers must focus on improving the resolution of their negative tone chemically amplified resist (NCAR) process. In this paper we will describe the development and characterization of a high resolution bright field mask process that is suitable for meeting 20 nm and early 14 nm optical lithography requirements. Work to develop and optimize use of an improved chrome hard mask material on the thin OMOG binary mask blank¹ in order to resolve smaller feature sizes on the mask will be described. The improved dry etching characteristics of the new chrome hard mask material enabled the use of a very thin (down to 65 nm) NCAR resist. A comparison of the minimum feature size, linearity, and through pitch performance of different NCAR resist thicknesses will also be described. It was found that the combination of the improved mask blank and thinner NCAR could allow achievement of 50 nm opaque SRAFs on the final mask.. In addition, comparisons of the minimum feature size performance of different NCAR resist materials will be shown. A description of the optimized cleaning processes and cleaning durability of the 50 nm opaque SRAFs will be provided. Furthermore, the defect inspection results of the new high resolution mask process and substrate will be shared.

Proceedings Article | 6 April 2011 Paper

Paper

EUV masks under exposure: practical considerations

Emily Gallagher, Gregory McIntyre, Tom Wallow, Sudharshanan Raghunathan, Obert Wood, Louis Kindt, John Whang, Monica Barrett

Proceedings Volume 7969, 79690W (2011) https://doi.org/10.1117/12.880755

KEYWORDS: Photomasks, Semiconducting wafers, Line edge roughness, Critical dimension metrology, Extreme ultraviolet lithography, Particles, Reflectivity, Extreme ultraviolet, Manufacturing, Ruthenium

Read Abstract +

Proceedings Article | 25 September 2010 Paper

Paper

A lifetime study of EUV masks

Emily Gallagher, Obert Wood, Louis Kindt, Hirokazu Kato, Uzodinma Okoroanyanwu, John Whang, Monica Barrett, Tom Wallow

Proceedings Volume 7823, 78231L (2010) https://doi.org/10.1117/12.864948

KEYWORDS: Photomasks, Extreme ultraviolet, Inspection, Semiconducting wafers, Extreme ultraviolet lithography, Ruthenium, Reflectivity, Particles, Scatterometry, Metrology

Read Abstract +

Proceedings Article | 25 September 2010 Paper

Paper

Development and characterization of a thinner binary mask absorber for 22-nm node and beyond

Tom Faure, Karen Badger, Louis Kindt, Yutaka Kodera, Toru Komizo, Shinpei Kondo, Takashi Mizoguchi, Satoru Nemoto, Kazunori Seki, Tasuku Senna, Richard Wistrom, Amy Zweber, Kazuhiro Nishikawa, Yukio Inazuki, Hiroki Yoshikawa

Proceedings Volume 7823, 78230J (2010) https://doi.org/10.1117/12.864130

KEYWORDS: Photomasks, Etching, Binary data, Opacity, Inspection, Image processing, Photoresist processing, Dry etching, Mask making, Thin films

Read Abstract +

Proceedings Article | 25 September 2010 Paper

Paper

Defect reduction through Lean methodology

Kathleen Purdy, Louis Kindt, Jim Densmore, Craig Benson, Nancy Zhou, John Leonard, Cynthia Whiteside, Robert Nolan, David Shanks

Proceedings Volume 7823, 78231Y (2010) https://doi.org/10.1117/12.864524

KEYWORDS: Manufacturing, Pellicles, Photomasks, Inspection, Visualization, Failure analysis, Bone, Visual communications, Roads, Heart

Read Abstract +

Proceedings Article | 17 October 2008 Paper

Paper

Characterization of binary and attenuated phase shift mask blanks for 32nm mask fabrication

Thomas Faure, Emily Gallagher, Michael Hibbs, Louis Kindt, Ken Racette, Richard Wistrom, Amy Zweber, Alfred Wagner, Yasutaka Kikuchi, Toru Komizo, Satoru Nemoto

Proceedings Volume 7122, 712209 (2008) https://doi.org/10.1117/12.801950

KEYWORDS: Photomasks, Binary data, Opacity, Chromium, Etching, Photoresist processing, Critical dimension metrology, Quartz, Phase shifts, Mask making

Read Abstract +

Proceedings Article | 17 October 2008 Paper

Paper

Damage mechanisms and process optimization for photomasks with sub-resolution assist features

L. Kindt, E. Gallagher, J. Levin, Y. Kodera, Y. Okawa, Y. Sasaki

Proceedings Volume 7122, 71220I (2008) https://doi.org/10.1117/12.801568

KEYWORDS: SRAF, Particles, Cavitation, Photomasks, Manufacturing, Photoresist processing, Nitrogen, Inspection, Quartz, Binary data

Read Abstract +

Proceedings Article | 30 October 2007 Paper

Paper

Development and characterization of a new low stress molybdenum silicide film for 45 nm attenuated phase-shift mask manufacturing

Thomas Faure, Emily Gallagher, Louis Kindt, Steven Nash, Ken Racette, Richard Wistrom, Toru Komizo, Yasutaka Kikuchi, Satoru Nemoto, Yushin Sasaki, Atsushi Kominato, Toshiyuki Suzuki

Proceedings Volume 6730, 67300C (2007) https://doi.org/10.1117/12.748664

KEYWORDS: Photomasks, Etching, Distortion, Manufacturing, Line edge roughness, Photoresist processing, Dry etching, Image processing, Transmittance, Opacity

Read Abstract +

Proceedings Article | 20 October 2006 Paper

Paper

Sulfur-free cleaning strategy for advanced mask manufacturing

Louis Kindt, Andrew Watts, Jay Burnham, William Aaskov

Proceedings Volume 6349, 63491J (2006) https://doi.org/10.1117/12.686228

KEYWORDS: Ozone, Scanning probe microscopy, Photomasks, Photoresist processing, Cryogenics, Manufacturing, Particles, Fermium, Frequency modulation, Inspection

Read Abstract +

Proceedings Article | 6 December 2004 Paper

Paper

A benchmark investigation on cleaning photomasks using wafer cleaning technologies

Louis Kindt, Jay Burnham, Pat Marmillion

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.579366

KEYWORDS: Photomasks, Particles, Contamination, Semiconducting wafers, Quartz, Ions, Attenuators, Inspection, Fermium, Frequency modulation

Read Abstract +

Proceedings Article | 6 December 2004 Paper

Paper

Wavelength-dependent spot defects on advanced embedded attenuated phase-shift masks

Christopher Magg, Jason Benz, Louis Kindt, Adam Smith, Jay Burnham, Jeffrey Riendeau, Christy Johnson, Rick Kontra

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.570563

KEYWORDS: Photomasks, Inspection, Particles, Chemical analysis, Aluminum, Silicon, Semiconducting wafers, Contamination, Manufacturing, Tantalum

Read Abstract +

Proceedings Article | 16 June 2003 Paper

Paper

Process for improved reflectivity uniformity in extreme-ultraviolet lithography (EUVL) masks

Carey Thiel, Kenneth Racette, Emily Fisch, Mark Lawliss, Louis Kindt, Chester Huang, Robin Ackel, Max Levy

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.484988

KEYWORDS: Chromium, Etching, Reflectivity, Oxides, Photomasks, Extreme ultraviolet lithography, Dry etching, Multilayers, Wet etching, Silicon

Read Abstract +

Proceedings Article | 27 December 2002 Paper

Paper

Image placement distortions in EPL masks

Carey Thiel, Louis Kindt, Mark Lawliss

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467756

KEYWORDS: Silicon, Photomasks, Boron, Line edge roughness, Electron beam lithography, Etching, Semiconducting wafers, Image quality, Scanning electron microscopy, Projection lithography

Read Abstract +

Proceedings Article | 16 August 2002 Paper

Paper

Mask availability for next-generation lithography

Michael Lercel, Emily Fisch, Kenneth Racette, Mark Lawliss, Carey Williams, Louis Kindt, Chester Huang

Proceedings Volume 4764, (2002) https://doi.org/10.1117/12.479342

KEYWORDS: Photomasks, Inspection, Lithography, Extreme ultraviolet lithography, X-rays, Etching, Chromium, Image processing, Multilayers, Reflectivity

Read Abstract +

Proceedings Article | 1 August 2002 Paper

Paper

EPL mask fabrication

Michael Lercel, Carey Williams, Mark Lawliss, Robin Ackel, Louis Kindt, Emily Fisch

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.477008

KEYWORDS: Photomasks, Image processing, Mask making, Metals, Optical lithography, Line edge roughness, Lithography, Electron beam lithography, Semiconducting wafers, Data centers

Read Abstract +

Proceedings Article | 1 August 2002 Paper

Paper

EUVL mask fabrication for the 45-nm node

Emily Fisch, Louis Kindt, Michael Lercel, Kenneth Racette, Carey Williams

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.476989

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Reflectivity, Chromium, Inspection, Particles, Silica, Silicon, Extreme ultraviolet, Oxides

Read Abstract +

Proceedings Article | 1 July 2002 Paper

Paper

Status of fabrication of square-format masks for extreme-ultraviolet lithography (EUVL) at the MCoC

Kenneth Racette, Carey Williams, Emily Fisch, Louis Kindt, Mark Lawliss, Robin Ackel, Michael Lercel

Proceedings Volume 4688, (2002) https://doi.org/10.1117/12.472286

KEYWORDS: Chromium, Extreme ultraviolet lithography, Etching, Photomasks, Inspection, Line edge roughness, Silicon, Metrology, Reflectivity, Quartz

Read Abstract +

Proceedings Article | 11 March 2002 Paper

Paper

Inspection and repair of EUV

Emily Fisch, Louis Kindt, Michael Lercel, Michael Schmidt

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458324

KEYWORDS: Photomasks, Inspection, Extreme ultraviolet, Chromium, Extreme ultraviolet lithography, Multilayers, Reflectivity, Silicon, Etching, Semiconducting wafers

Read Abstract +

Proceedings Article | 20 August 2001 Paper

Paper

Evaluation and comparison of the pattern-transfer-induced image placement distortions on e-beam projection lithography masks

Christopher Magg, Michael Lercel, Mark Lawliss, Robin Ackel, Neal Caldwell, Louis Kindt, Kenneth Racette, Carey Williams, Phillip Reu

Proceedings Volume 4343, (2001) https://doi.org/10.1117/12.436664

KEYWORDS: Photomasks, Image processing, Electron beam lithography, Projection lithography, Silicon, Scattering, Etching, Lithography, Finite element methods, Image analysis

Read Abstract +

Showing 5 of 23 publications

SIGN IN TO:

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Advertisement

Advertisement