Dr. Lovejeet Singh Profile

Dr. Lovejeet Singh

at JSR Micro

SPIE Involvement:

Conference Program Committee | Author

Publications (20)

Proceedings Article | 9 April 2018 Presentation + Paper

Presentation + Paper

Polymer brush as adhesion promoter for EUV patterning

Jing Guo, Anuja De Silva, Yann Mignot, Yongan Xu, Abraham Arceo de la Pena, Luciana Meli, Indira Seshadri, Dominik Metzler, Lovejeet Singh, Tsuyoshi Furukawa, Ramakrishnan Ayothi, Nelson Felix, Dan Corliss

Proceedings Volume 10586, 105860I (2018) https://doi.org/10.1117/12.2297113

KEYWORDS: Chemistry, Polymers, Printing, Etching, Optical lithography, Extreme ultraviolet, Photomasks, Extreme ultraviolet lithography, Dielectrics, Semiconducting wafers

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SPIE Journal Paper | 28 August 2017

Ultrathin extreme ultraviolet patterning stack using polymer brush as an adhesion promotion layer

Indira Seshadri, Anuja De Silva, Luciana Meli, Chi-Chun Charlie Liu, Cheng Chi, Jing Guo, Hoa Truong, Kristin Schmidt, John Arnold, Nelson Felix, Lovejeet Singh, Tsuyoshi Furukawa, Ramakrishnan Ayothi, Angelique Raley, Richard Farrell

JM3, Vol. 16, Issue 03, 033506, (August 2017) https://doi.org/10.1117/12.10.1117/1.JMM.16.3.033506

KEYWORDS: Oxides, Polymers, Extreme ultraviolet, Optical lithography, Head-mounted displays, Etching, Atomic layer deposition, Chemistry, Plasma enhanced chemical vapor deposition, Printing

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Proceedings Article | 13 April 2017 Presentation + Paper

Presentation + Paper

Electrical study of DSA shrink process and CD rectification effect at sub-60nm using EUV test vehicle

Cheng Chi, Chi-Chun Liu, Luciana Meli, Jing Guo, Doni Parnell, Yann Mignot, Kristin Schmidt, Martha Sanchez, Richard Farrell, Lovejeet Singh, Tsuyoshi Furukawa, Kafai Lai, Yongan Xu, Daniel Sanders, David Hetzer, Andrew Metz, Sean Burns, Nelson Felix, John Arnold, Daniel Corliss

Proceedings Volume 10146, 101460Q (2017) https://doi.org/10.1117/12.2260454

KEYWORDS: Etching, Directed self assembly, Polymethylmethacrylate, Critical dimension metrology, Picosecond phenomena, Oxides, Scanning electron microscopy, Optical lithography, Extreme ultraviolet, Metals

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Proceedings Article | 27 March 2017 Paper

Paper

DSA patterning options for logics and memory applications

Chi-Chun Liu, Elliott Franke, Yann Mignot, Scott LeFevre, Stuart Sieg, Cheng Chi, Luciana Meli, Doni Parnell, Kristin Schmidt, Martha Sanchez, Lovejeet Singh, Tsuyoshi Furukawa, Indira Seshadri, Ekmini Anuja De Silva, Hsinyu Tsai, Kafai Lai, Hoa Truong, Richard Farrell, Robert Bruce, Mark Somervell, Daniel Sanders, Nelson Felix, John Arnold, David Hetzer, Akiteru Ko, Andrew Metz, Matthew Colburn, Daniel Corliss

Proceedings Volume 10146, 1014603 (2017) https://doi.org/10.1117/12.2260479

KEYWORDS: Directed self assembly, Plasma etching, Optical lithography, Etching, Logic, Lithography, Manufacturing, Nanofabrication, Silicon, Metals, Extreme ultraviolet, Line edge roughness, Optical alignment, Critical dimension metrology

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Proceedings Article | 24 March 2017 Presentation + Paper

Presentation + Paper

Single-expose patterning development for EUV lithography

Anuja De Silva, Karen Petrillo, Luciana Meli, Jeffrey Shearer, Genevieve Beique, Lei Sun, Indira Seshadri, Taehwan Oh, Seulgi Han, Nicole Saulnier, Joe Lee, John Arnold, Bassem Hamieh, Nelson Felix, Tsuyoshi Furukawa, Lovejeet Singh, Ramakrishnan Ayothi

Proceedings Volume 10143, 101431G (2017) https://doi.org/10.1117/12.2261216

KEYWORDS: Optical lithography, Extreme ultraviolet lithography, Extreme ultraviolet, Lithography, Materials processing, Photoresist processing, Etching, Metals, Quantum efficiency, Photoresist materials, Interfaces, Silicon

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Proceedings Article | 24 March 2017 Presentation + Paper

Presentation + Paper

Ultrathin EUV patterning stack using polymer brush as an adhesion promotion layer

Indira Seshadri, Anuja De Silva, Luciana Meli, Charlie Liu, Cheng Chi, Jing Guo, Kristin Schmidt, Hoa Truang, John Arnold, Nelson Felix, Lovejeet Singh, Tsuyoshi Furukawa, Ramakrishnan Ayothi, Angelique Raley, Richard Farrell

Proceedings Volume 10143, 101431D (2017) https://doi.org/10.1117/12.2258565

KEYWORDS: Extreme ultraviolet, Optical lithography, Polymers, Etching, Extreme ultraviolet lithography, Photoresist materials, Lithography, Photoresist processing, Back end of line, Oxides, Head-mounted displays, Atomic layer deposition, Chemistry

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Proceedings Article | 4 April 2016 Paper

Paper

DSA via hole shrink for advanced node applications

Cheng Chi, Chi-Chun Liu, Luciana Meli, Kristin Schmidt, Yongan Xu, Ekmini Anuja DeSilva, Martha Sanchez, Richard Farrell, Hongyun Cottle, Daiji Kawamura, Lovejeet Singh, Tsuyoshi Furukawa, Kafai Lai, Jed Pitera, Daniel Sanders, David Hetzer, Andrew Metz, Nelson Felix, John Arnold, Matthew Colburn

Proceedings Volume 9777, 97770L (2016) https://doi.org/10.1117/12.2219706

KEYWORDS: Directed self assembly, Polymethylmethacrylate, Picosecond phenomena, Etching, Global Positioning System, Critical dimension metrology, Optical lithography, Lithography, Extreme ultraviolet, Semiconducting wafers

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SPIE Journal Paper | 1 July 2011

Defect reduction of high-density full-field patterns in jet and flash imprint lithography

Lovejeet Singh, Kang Luo, Zhengmao Ye, Frank Xu, Gaddi Haase, David Curran, Dwayne LaBrake, Douglas Resnick, S. Sreenivasan

JM3, Vol. 10, Issue 03, 033018, (July 2011) https://doi.org/10.1117/12.10.1117/1.3625635

KEYWORDS: Photomasks, Particles, Lithography, Semiconducting wafers, Nickel, Photoresist processing, Inspection, Contamination, Wafer inspection, Defect inspection

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Proceedings Article | 16 April 2011 Paper

Paper

Optimization of pitch-split double patterning photoresist for applications at the 16nm node

Steven Holmes, Cherry Tang, Sean Burns, Yunpeng Yin, Rex Chen, Chiew-seng Koay, Sumanth Kini, Hideyuki Tomizawa, Shyng-Tsong Chen, Nicolette Fender, Brian Osborn, Lovejeet Singh, Karen Petrillo, Guillaume Landie, Scott Halle, Sen Liu, John Arnold, Terry Spooner, Rao Varanasi, Mark Slezak, Matthew Colburn

Proceedings Volume 7972, 79720G (2011) https://doi.org/10.1117/12.881489

KEYWORDS: Photoresist processing, Reactive ion etching, Lithography, Photomasks, Dielectrics, Etching, Scanning electron microscopy, Double patterning technology, Semiconductors, Optical lithography

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Proceedings Article | 2 April 2011 Paper

Paper

Defect reduction of high-density full-field patterns in jet and flash imprint lithography

Lovejeet Singh, Kang Luo, Zhengmao Ye, Frank Xu, Gaddi Haase, David Curran, Dwayne LaBrake, Douglas Resnick, S. V. Sreenivasan

Proceedings Volume 7970, 797007 (2011) https://doi.org/10.1117/12.879933

KEYWORDS: Photomasks, Particles, Lithography, Semiconducting wafers, Nickel, Inspection, Photoresist processing, Wafer inspection, Ultraviolet radiation, Defect inspection

Read Abstract +

Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Jet and Flash Imprint Lithography (J-FIL) involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed leaving a patterned resist on the substrate. Acceptance of imprint lithography for manufacturing will require demonstration that it can attain defect levels commensurate with the defect specifications of high end memory devices. Typical defectivity targets are on the order of 0.10/cm2. This work summarizes the results of defect inspections focusing on two key defect types; random non-fill defects occurring during the resist filling process and repeater defects caused by interactions with particles on the substrate. Non-fill defectivity must always be considered within the context of process throughput. The key limiting throughput step in an imprint process is resist filling time. As a result, it is critical to characterize the filling process by measuring non-fill defectivity as a function of fill time. Repeater defects typically have two main sources; mask defects and particle related defects. Previous studies have indicated that soft particles tend to cause non-repeating defects. Hard particles, on the other hand, can cause either resist plugging or mask damage. In this work, an Imprio 500 twenty wafer per hour (wph) development tool was used to study both defect types. By carefully controlling the volume of inkjetted resist, optimizing the drop pattern and controlling the resist fluid front during spreading, fill times of 1.5 seconds were achieved with non-fill defect levels of approximately 1.2/cm². Longevity runs were used to study repeater defects and a nickel contamination was identified as the key source of particle induced repeater defects.

Proceedings Article | 1 April 2010 Paper

Paper

Inspection of imprint lithography patterns for semiconductor and patterned media

Douglas Resnick, Gaddi Haase, Lovejeet Singh, David Curran, Gerard Schmid, Kang Luo, Cindy Brooks, Kosta Selinidis, John Fretwell, S. Sreenivasan

Proceedings Volume 7637, 76370R (2010) https://doi.org/10.1117/12.848391

KEYWORDS: Inspection, Photomasks, Lithography, Particles, Semiconducting wafers, Defect detection, Semiconductors, Optical inspection, Servomechanisms, Defect inspection

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Proceedings Article | 24 March 2009 Paper

Paper

Advanced modeling strategies to improve overlay control for 32-nm lithography processes

Anna Minvielle, Lovejeet Singh, Jeffrey Schefske, Joerg Reiss, Eric Kent, Terry Manchester, Brad Eichelberger, Kelly O'Brien, Jim Manka, John Robinson, David Tien

Proceedings Volume 7272, 72722X (2009) https://doi.org/10.1117/12.814256

KEYWORDS: Semiconducting wafers, Data modeling, Overlay metrology, Scanners, Radium, Lithography, Visualization, Performance modeling, Immersion lithography, Double patterning technology

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Proceedings Article | 23 March 2009 Paper

Paper

Simultaneous overlay and CD measurement for double patterning: scatterometry and RCWA approach

Jie Li, Zhuan Liu, Silvio Rabello, Prasad Dasari, Oleg Kritsun, Catherine Volkman, Jungchul Park, Lovejeet Singh

Proceedings Volume 7272, 727207 (2009) https://doi.org/10.1117/12.814706

KEYWORDS: Overlay metrology, Critical dimension metrology, Semiconducting wafers, Scatterometry, Double patterning technology, Error analysis, Reflectivity, Metrology, Cadmium, Diffraction gratings

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Proceedings Article | 7 March 2008 Paper

Paper

32nm overlay improvement capabilities

Brad Eichelberger, Kevin Huang, Kelly O'Brien, David Tien, Frank Tsai, Anna Minvielle, Lovejeet Singh, Jeffrey Schefske

Proceedings Volume 6924, 69244C (2008) https://doi.org/10.1117/12.773014

KEYWORDS: Semiconducting wafers, Scanners, Overlay metrology, Metrology, Double patterning technology, Performance modeling, Data modeling, Lithography, Optical lithography, Statistical modeling

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Proceedings Article | 29 March 2006 Paper

Paper

Effect of top coat and resist thickness on line edge roughness

Lovejeet Singh, Itty Matthew, Adam Pawloski, Anna Minvielle

Proceedings Volume 6153, 61530W (2006) https://doi.org/10.1117/12.655925

KEYWORDS: Line edge roughness, Thin film coatings, Scanning electron microscopy, Printing, Lithography, Photoresist processing, Photomicroscopy, Immersion lithography, Image processing, Diffusion

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Proceedings Article | 4 May 2005 Paper

Paper

The effect of film thickness on the dissolution rate and hydrogen bonding behavior of photoresist polymer thin films

Lovejeet Singh, Peter Ludovice, Clifford Henderson

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.600100

KEYWORDS: Polymers, Hydrogen, Polymer thin films, Crystals, Photoresist materials, FT-IR spectroscopy, Silicon films, Quartz, Liquid crystals, Silicon

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Proceedings Article | 4 May 2005 Paper

Paper

Characterization of property variation in ultra-thin polymer films from molecular simulation

Lovejeet Singh, Clifford Henderson, Peter Ludovice

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.607435

KEYWORDS: Polymers, Polymer thin films, Chemical species, Molecules, Glasses, Thin films, Computer simulations, Diffusion, Carbon, Optical lithography

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Proceedings Article | 14 May 2004 Paper

Paper

Effect of nanoscale confinement on the diffusion behavior of photoresist polymer thin films

Lovejeet Singh, Peter Ludovice, Clifford Henderson

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.535333

KEYWORDS: Diffusion, Polymers, Polymer thin films, Crystals, Photoresist materials, Quartz, Molecules, Humidity, Thin films, Electron beam lithography

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Proceedings Article | 14 May 2004 Paper

Paper

Effect of film thickness on the dissolution rate behavior of photoresist polymer thin films

Lovejeet Singh, Peter Ludovice, Clifford Henderson

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.536205

KEYWORDS: Polymers, Polymer thin films, Crystals, Photoresist materials, Thin films, Quartz, Liquid crystals, Lithography, Data conversion, Diffusion

Read Abstract +

Fabrication of future nanoscale electronic devices will likely require the use of ultra-thin resist films. It has been observed that film thickness, molecular weight, and substrate interactions can significantly affect the thermophysical properties of polymer thin films such as the glass transition temperature and coefficient of thermal expansion. Recently, film thickness has been reported to have a dramatic impact on the diffusion coefficient of small molecules in polymer ultra-thin films. Both of these factors, changes in either the polymer film thermophysical properties or diffusion behavior, can potentially have an impact of the lithographic performance of polymer thin film photoresists. As an extension to this previous work, it is desirable to understand the influence of film thickness on a variety of other lithographically important polymer properties. Dissolution rate is one such important physical property for photoresist polymer thin films that is of particular importance to the microelectronics industry. Simulation of lithographic processes relies to a great extent on knowledge of the dissolution or development behavior of photoresist thin films. Resist contrast is also known to be strongly affected by the dissolution behavior of the resist matrix polymer. So far, the possibility of film thickness significantly affecting the dissolution behavior of thin photoresist films has generally been ignored. This paper reports on work focused on determining the effect of film thickness on the dissolution behavior of a variety of resist polymers including novolac, polyhydroxystyrene (PHOST), and bis-trifluoromethyl carbinol substitute polynorbornene (HFAPNB). In the present work, Quartz Crystal Microbalance (QCM) methods were used to determine the dissolution rate of polymer thin films for thicknesses ranging from approximately 1 μm to 100 nm. It was observed that both poly(hydroxystyrene) (PHOST) and bis-trifluoromethyl carbinol substituted polynorbornene (HFAPNB) exhibit strong surface acceleration behavior as compared to the classic surface inhibition that has been extensively studied in novolac polymers. Most importantly, the dissolution rate of PHOST and HFAPNB thin films was found to depend strongly on the thickness of the polymer film for film thicknesses below a critical thickness value.

Proceedings Article | 12 June 2003 Paper

Paper

Influence of film thickness, molecular weight, and substrate on the physical properties of photoresist polymer thin films

Lovejeet Singh, Peter Ludovice, Clifford Henderson

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485134

KEYWORDS: Polymer thin films, Silicon films, Polymers, Polymethylmethacrylate, Silicon, Glasses, Head-mounted displays, Oxides, Temperature metrology, Thin films

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Showing 5 of 20 publications

Conference Committee Involvement (4)

Novel Patterning Technologies 2025

24 February 2025 | San Jose, California, United States

Novel Patterning Technologies 2024

26 February 2024 | San Jose, California, United States

Novel Patterning Technologies 2023

27 February 2023 | San Jose, California, United States

Novel Patterning Technologies 2022

25 April 2022 | San Jose, California, United States

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