Mr. Lu Han Profile

Lu Han

at Case Western Reserve Univ

SPIE Involvement:

Author

Publications (5)

Proceedings Article | 19 April 2017 Presentation

Ultra-wide bandgap beta-Ga2O3 for deep-UV solar blind photodetectors (Conference Presentation)

Subrina Rafique, Lu Han, Hongping Zhao

Proceedings Volume 10105, 101051O (2017) https://doi.org/10.1117/12.2252373

KEYWORDS: Palladium, Semiconductor materials, Thin films, Photodetectors, Deep ultraviolet, Low pressure chemical vapor deposition, Thin film growth, Ultraviolet radiation, Metalorganic chemical vapor deposition, Thermal effects

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Proceedings Article | 19 April 2017 Presentation

Novel device designs enabled by lattice-matched GaN-ZnGeN2 heterostructures (Conference Presentation)

Hongping Zhao, Lu Han

Proceedings Volume 10104, 101041W (2017) https://doi.org/10.1117/12.2252185

KEYWORDS: Lutetium, Quantum wells, Light emitting diodes, Gallium nitride, Heterojunctions, Optoelectronics, Solid state lighting, Quantum efficiency, Green light emitting diodes, Scattering

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Proceedings Article | 27 February 2014 Paper

High efficiency green light-emitting diodes based on InGaN-ZnGeN2 type-II quantum wells

Lu Han, Kathleen Kash, Hongping Zhao

Proceedings Volume 9003, 90030W (2014) https://doi.org/10.1117/12.2038756

KEYWORDS: Quantum wells, Gallium nitride, Indium gallium nitride, Light emitting diodes, Quantum efficiency, Green light emitting diodes, Heterojunctions, Chemical species, Solid state lighting, Polarization

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Proceedings Article | 25 March 2013 Paper

GaN microdomes for broadband omnidirectional antireflection for concentrator photovoltaics

Lu Han, Matthew McGoogan, Tyler Piedimonte, Ian Kidd, Roger French, Hongping Zhao

Proceedings Volume 8620, 862016 (2013) https://doi.org/10.1117/12.2002864

KEYWORDS: Gallium nitride, Reflectivity, Silica, Reflection, Antireflective coatings, Polarization, Photovoltaics, Etching, Finite-difference time-domain method, Reactive ion etching

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Proceedings Article | 4 March 2013 Paper

Light extraction efficiency enhancement for InGaN quantum wells light-emitting diodes with GaN micro-domes

Peng Zhao, Lu Han, Hongping Zhao

Proceedings Volume 8641, 864117 (2013) https://doi.org/10.1117/12.2002857

KEYWORDS: Light emitting diodes, Quantum wells, Indium gallium nitride, Gallium nitride, Finite-difference time-domain method, Quantum efficiency, Semiconductors, External quantum efficiency, Reactive ion etching, Mirrors

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