Intense Cathodoluminescence (CL) emission is obtained for Electron Modified Porous Silicon films when excited with electron beams of kinetic energies below 2KeV, supporting the applicability of such material as light emitter in field emission display devices. Porous Silicon films were irradiated with an electron beam producing a collapsed nanostructure of reduced porosity. The CL intensity from the excited pixels made of such material reduced in less than
10% during a continuous burning of 10 hours. The CL spectra of the films correlate with its photoluminescence showing that the origin of the CL is the quantum confinement effect in the silicon nanoparticles. In situ SIMS analyses before and after prolonged e-beam excitation, as well as of the electron-eroded material from the sample, showed minor compositional changes of the film and reduced sputtering of the silicon nanoparticles due to the electron irradiation. In situ bombardment of the porous material with Hydrogen beams induced changes on the surface passivation of the
nanoparticles through which we were able to maximize the CL of the films.
Optical quality porous silicon (PSi) and nanoparticle crystalline-Si (c-Si) enriched SiO2 materials were studied by absorption; luminescence; time-resolved emission measurements. Using tunable ultrafast laser as a light source, the excited state dynamics was also investigated. In a nonlinear optical (NLO) spectroscopic study the pulsed degenerate-four-wave-mixing (DFWM) technique was employed. In absorption measurement all samples show a broad and intense UV absorption with a cut-off edge at ~400 nm. In photoluminescence (PL) measurement, red emission can generally be observed in both Psi and c-Si samples. At 8 K the broadband PL of PSi is peaked at ~670 nm, with the PL lifetime in microseconds regime. The band maximum shifts toward low energy side while excitation wavelength increases. The particle size distribution was estimated using the optical transmission data according to the size- energy gap relationship. DFWM measurement reveals a long lived, slowly decaying signal which emerges from the coherent response. It indicates that the excitation was highly localized. For c-Si sample, the luminescence maximum was found at higher energy side around 590 nm, but the emission lifetime is much shortened to as ~10ns. In order to understand the nature of nanocomposite, Eu dopant was introduced into the sample. The investigation of luminescence and time-resolved emission of Eu3+ shows that the c-Si nanoparticles are distributed in SiO2 matrix with an average size of the nanoparticles being around 2.2 nm. The valence band (VB) to conduction band (CB) energy gap is about 2.7 ev. By ultrashort (femtoseconds and picoseconds) laser pulse excitation the charge carriers produced in CB of c-Si nanoparticles contributes to the observed optical responses. The excited state dynamical process associated with the movement of charge carriers is characterized by an instantaneous response signal, followed by buildup of the slowly decaying signal within 500ps. The analysis of the charge creation, trapping and reactivation is discussed.
In this research nanometric particles from luminescent porous silicon film were synthesized. This particles were later inoculated in bacterial strains of B. subtilis (BSi) and K. pneumoniae (KSi). A comparison of the behavior of their growth curve and the ones reported for C. xerosis (XSi) and E. coli (ESi) in presence of silicon nanoparticles is presented. The growth curve of BSi, as well as the KSi, present changes compared to their standard curves. The BSi growth curve grows below the standard curve after teh fifth hor, while in the KSi this happens after the eighth hour. Based on our preliminary findings we can sepculate that at this point in time a critical population is present, and this may give rise to the possible incorporation of the silicon particles by the bacteria, or a possible pleomorphism inhibits reproduction. The stationary region, in both case, takes place sooner than in the standard curve. No significant oscillations are observed in any case, which differs from the XSi curve, were oscillations of intervals of almost 1 hour were reported. In addition, these curves have a different behavior when compared to the ESi growth curve, in which no significant differences between the standard and teh particle containing sample were reported.
Eu3+-doped crystalline Si-enriched SiO2 nanocomposite thin films were prepared using Ar sputtering deposition on quartz substrates. By conventional laser spectroscopy the material was characterized in either frequency or time domain. The results show that the doped europium ions are present in trivalent state, as Eu3+. They are distributed in SiO2 matrix and on the boundary surface of c-Si nanoparticles. With increased excitation intensity at 532nm, two-photon absorption (TPA) induced new emission was observed. It is characterized by an additional broadband emission with a peak at 560nm and lifetime of ~ 0.8 s. This feature has been identified as the emission from Eu2+ ions. Further measurements reveal that the observed phenomenon originates from charge transfer process giving rise to a photoinduced transient valence switching from Eu3+ to Eu2+ in this particular material. Free carriers were originally created in the conduction band (CB) of c-Si nanoparticles by TPA, then trapped at the surrounding Eu3+ center due to strong Coulomb interaction. Luminescence of the formed divalent Eu2+ is characterized by a broadband d → f transition with fast decay rate. Degenerate four-wave-mixing experiment further revealed that in undoped sample TPA-created charge carriers in CB were trapped in shallow centers of Si nanoparticles. The trapping has an average time period of 500ps, and the carriers were then released for recombination. In Eu3+ -doped sample, however, the average time period of 500ps was no longer observable. It therefore suggests that the strong Coulomb attraction results in immediately capturing of the created charges by positive Eu3+ center.
A new method of automatically determining control points for registration and fusion of multispectral images is presented. This method was motivated by the question of whether it is possible to computationally assess the quality of optical flow estimates at various points throughout the image without knowing the true flow field. Somewhat surprisingly the answer is yes and is determined by the norm of the least squares operator associated with the (windowed) optical flow equations. This approach has several advantages. First it shows the danger of using the condition number of the optical flow equations to measure the reliability of the computed flow. Second the method isolates points in the image corresponding to maximum reliability. These points in turn can be used as control points for registration and fusion without actually computing the optical flow and indeed only require a single frame for computation. Since this computation only requires a few operations per pixel it is very fast. The control points are defined as the minima of the norm of the least squares operator and as such enjoy a great deal of invariance with respect to the regional intensity changes seen in multispectral images. For this reason they are ideal for multispectral registration. A multiscale version of this method has been developed that allows a coarse to fine control point decomposition for suppressing the negative effects of noise and clutter. Various applications are presented demonstrating the utility of this approach for real world images including multispectral satellite images and dual spectral IR image sequences. For the latter sequence we were able to obtain subpixel motion estimates that were accurate to within one percent of the true motion.
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