Power-scaling of optically pumped semiconductor lasers (OPSL's) using a resonator with multiple OPS chips is
demonstrated. With a 3-chip cavity and intra-cavity second harmonic generation, we obtain 55W of TEM00 mode output
at 532 nm and 66 W in multi-transverse mode. In addition, we describe the design of a periodic dynamically stable
resonator that allows scaling to more than 4 chips and demonstrate that the output power scales with the number of chips
in the cavity.
In this paper, we report on 500 mW of cw ultraviolet radiation at 360 nm, which has been obtained by intracavity
frequency doubling of a Pr:YLF laser, end pumped by 1.8 W Coherent High Power OPS Laser at 479 nm. We have
demonstrated the scalability of Pr:YLF laser to pump power of 5.3Watts, resulting in real continuous wave 2.5 Watts
of output power at 720 nm and cw 1.3 Watts at 360 nm.
In this paper, we report on 2.5 Watts of output power at 522 nm of Pr:YLF laser end pumped by 5.3 W Coherent
High Power OPS Laser at 479 nm, and on 620 mW of cw ultraviolet radiation at 261 nm, which has been obtained
by intracavity frequency doubling of the Pr:YLF laser with a BBO crystal.
The use of a dynamically stable telescopic cavity to compress the cavity length of intra-cavity doubled, TEM00 mode, optically-pumped semiconductor lasers (OPSL's) is evaluated. We find that the cavity length may be adjusted (approximately) between the Rayleigh lengths of the mode sizes on the end mirrors without sacrificing output power or dynamic stability. Consequently, for a 10 W OPSL, the length may be scaled between about 1 and 100 cm. In addition, we calculate that in all respects, the cavity stability range and misalignment sensitivity maintain practical values to about 1 cm cavity length. These results are applied to demonstrate OPSL's producing TEM00 mode outputs of 11.5 and 7.3 W at 531 and 486 nm with resonator footprints as small as 15 mm.
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