The effect of the number and position of AlInAs energy barrier layers on the output characteristics of high-power multimode AlGaInAs / InP lasers, spectral range 1400–1600 nm, has been studied. It was shown that the use of energy barriers allows increasing the laser maximum output power 1.5-2 times. It was found that the barrier layer should be installed at the waveguide-cladding heterojunction from the p-side in order to localize electrons in the waveguide layer.
The study was supported by the Russian Science Foundation, project No. 19-79-30072