Ms. Malavika Sharma Profile

Malavika Sharma

at Siemens EDA

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Publications (7)

Proceedings Article | 21 November 2023 Presentation + Paper

Integration of e-beam mask writer corrections in MPC applications

Ingo Bork, Rachit Sharma, Malavika Sharma, Archana Rajagopalan, Bhardwaj Durvasula, Kushlendra Mishra, Mary Zuo

Proceedings Volume 12751, 127510Y (2023) https://doi.org/10.1117/12.2688502

KEYWORDS: Modulation, Scattering, SRAF, Photomask technology, Backscatter, Photomasks, Manufacturing, Forward error correction, Extreme ultraviolet, Etching

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Critical Dimension Uniformity (CDU) of photomasks written with 50 kV e-beam writers is very sensitive to scattering and mask process effects such as etch loading. The interaction distances of those effects vary by about 6 orders of magnitude and range from around 10 nm to around 10 mm. With the introduction of 50 kV e-beam writers, tool manufacturers also developed methods for compensating the most significant scattering effects, namely backscattering, often called PEC for Proximity Effect Correction and fogging (also called FEC for Fogging Effect Correction). E-beam writers, including the most advanced multi-beam writers, use local dose modulation of the exposure dose as described in [1]-[3] to compensate for those longer-range scattering effects. This method works reasonably well for older technology nodes but starts to be a limiting factor for most advanced EUV masks which have to meet very high CDU specifications. The reason is that the Critical Dimension (CD) response to dose is not constant across different mask shapes. For example, very small features like sub-resolution assist features (SRAFs) have a higher ΔCD/ΔDose response than larger features, since smaller features have a more gradual image edge slope. So far it has not been reported in the literature that Mask Process Correction (MPC) applications take the e-beam writer corrections into account when correcting for shorter-range non-linearity effects. Ref. [4] describes an attempt to combine forward and backscatter compensation as an off-tool MPC application where all corrections seem to be achieved via dose modulation. This paper describes a method for integrating the e-beam writer dose modulation into the MPC engine, so that the actual exposure dose at any given location on the mask is taken into account when applying shape based, short-range MPC. With this extension of MPC, a fully consistent short- and long-range correction is possible, even when the actual long-range corrections are applied on the e-beam writer and not directly during the offline MPC step.

Proceedings Article | 1 December 2022 Presentation + Paper

A method for calibrating a curvature-based pre-bias model for advanced mask process correction applications

Rachit Sharma, Mary Zuo, Ingo Bork, Archana Rajagopalan, Malavika Sharma, Kushlendra Mishra

Proceedings Volume 12293, 1229309 (2022) https://doi.org/10.1117/12.2641760

KEYWORDS: Calibration, Photomasks, Process modeling, Optimization (mathematics), Model-based design, Manufacturing, Lithography, Source mask optimization

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Proceedings Article | 12 October 2021 Presentation + Paper

Using curvature-based pre-bias to reduce number of iterations in curvilinear mask process correction

Zhiheng (Mary) Zuo, Malavika Sharma, Ingo Bork, Bhardwaj Durvasula, Peter Buck

Proceedings Volume 11855, 118550Q (2021) https://doi.org/10.1117/12.2600959

KEYWORDS: Computational lithography, Photomasks, Optical proximity correction, Process modeling, Model-based design, Manufacturing

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Proceedings Article | 16 October 2019 Presentation + Paper

Creating nonideality: enabling cross-platform process matching solutions with MPC (and a lot of hard work)

Charles Whiting, Ingo Bork, Peter Buck, Robin Chia, Bharadwaj Durvasula, Daniel Hill, Gazi Huda, Ken Jantzen, Matthew Leuthold, Jianliang Li, Joerg Mellmann, Kushlendra Mishra, Jed Rankin, Nageswara Rao, Malavika Sharma, Rachit Sharma, Adam Smith, Michaela Wentz

Proceedings Volume 11148, 1114805 (2019) https://doi.org/10.1117/12.2538347

KEYWORDS: Photomasks, Data modeling, Optical proximity correction, Critical dimension metrology, Calibration, Lithography, Semiconducting wafers, Manufacturing, Opacity, Etching

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Proceedings Article | 3 October 2019 Paper

Machine learning guided curvilinear MPC

Malavika Sharma, Bhardwaj Durvasula, Nageswara Rao, Ingo Bork, Rachit Sharma, Kushlendra Mishra, Peter Buck

Proceedings Volume 11148, 111480Q (2019) https://doi.org/10.1117/12.2538646

KEYWORDS: Photomasks, Machine learning, Optical proximity correction, Computational lithography, Data modeling, Lithography, Neural networks, Waveguides, Vestigial sideband modulation, Data processing

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Proceedings Article | 26 September 2019 Paper

Resist-slope aware modeling for mask process correction applications

Rachit Sharma, Ingo Bork, Kushlendra Mishra, ShiZhi Lyu, Linna Cong, Mingjing Tian, Malavika Sharma, Bhardwaj Durvasula, Nageswara Rao, Peter Buck

Proceedings Volume 11148, 111480G (2019) https://doi.org/10.1117/12.2536529

KEYWORDS: Process modeling, Photomasks, Etching, Critical dimension metrology, Calibration, Semiconductor manufacturing, Control systems, Model-based design, Scattering, Photoresist processing

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Proceedings Article | 31 October 2017 Presentation + Paper

CLMPC: curvilinear MPC in a mask data preparation flow

Ingo Bork, Murali Reddy, Bhardwaj Durvasula, Nageswara Rao, Malavika Sharma, Peter Buck

Proceedings Volume 10451, 1045109 (2017) https://doi.org/10.1117/12.2282502

KEYWORDS: Photomasks, Optical proximity correction, Model-based design, Semiconducting wafers, Data modeling, Lithography, Calibration, Electron beam lithography, Mask making

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Showing 5 of 7 publications

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