Ms. Manana Khachidze Profile

Manana Khachidze

at Tbilisi State Univ

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Publications (2)

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Proceedings Article | 29 April 2003 Paper

Photoelectric characteristics of contacts In-semiconductor A3B5

David Laperashvili, Tinatin Laperashvili, Manana Khachidze, Ilia Imerlishvili

Proceedings Volume 5118, (2003) https://doi.org/10.1117/12.498480

KEYWORDS: Metals, Semiconductors, Diodes, Annealing, Semiconducting wafers, Indium, Interfaces, Gallium arsenide, Heterojunctions, Gallium

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The effect of annealing structures on the electrical and photoelectric properties of metal-semiconductor contacts was investigated. Metal/semiconductor structures have been fabricated by method of electrochemically deposition of In on the electrochemically cleaned surface of the semiconductors A3B5 (GaP, GaAs). The dark capacitance and current -voltage characteristics and the hotoelectric spectra of zero bias for front-illuminated contact show near-ideal Schottky barrier diode properties for annealing temperature up to 250-3000C. Was found that the spectra of zero bias photocurrent of In/GaP beside the region photoconductivity resulting from band to band excitation, contains, also, separated of them the region photoconductivity in a long wavelength of spectra, which is related to the interaction between the metal and semiconductor. Samples used for the fabrication of In/GaP diodes were growing by Chochralski method especially un doped n-type GaP into (III) oriented wafers. The thickness and carrier concentration was 200-250 mimic and (2-4). 10 exp17 atom/cm3 respectively. At first ohmical contact to the one side of wafer was formed by alloying of indium at the temperature 5000C for GaAs and 600°C for GaP during 5 min in hydrogen. Then the sample with ohmic contact and wire for preceding the power was coaled with chemical stable polystyrene solution except the area where the metal will be deposited. The wafers were then ached chemically, rinsed in distilled water and were transferred immediately into electrolyte for deposition of In.

Proceedings Article | 13 November 2002 Paper

Electrochemical deposition of Al on semiconductors

Iliy Imerlishvili, Tinatin Laperashvili, Manana Khachidze

Proceedings Volume 4936, (2002) https://doi.org/10.1117/12.469746

KEYWORDS: Aluminum, Semiconductors, Metals, Semiconducting wafers, Gallium arsenide, Diodes, Chlorine, Ions, Electrodes, Oxides

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Samples used for the fabrication of M-S diodes were growing by Chochralski method especially undoped n-type GaP into (III) oriented wafers. The thickness and carrier concentration was 200-250 mimic and (2-4). 10 exp17 atom/cm3 respectively. At first ohmical contact to the one side of wafer was formed by alloying of indium at the temperature 600°C during 5 min in hydrogen. Then the sample with ohmical contact and wire for preceding the power was covered with chemical stable polystyrene solution except the area where the metal will be deposited. The wafers were then ached chemically, rinsed in distilled water and were transferred immediately into electrolyte. Deposition of metal was done by the usual electrochemical method. Electrolyte was poured into quartz glass. The semiconductors wafer was used as the one electrode and as another electrode was used aluminum. For deposition Al the aqueous solution of chlorides have been used as an electrolyte, which consisted also NaOCI. At first, semiconductor’s wafer was used as the anode and cleaning of semiconductors surface was done. Then the potential was immediately changed in opposite direction and deposition of metal on freshly cleaned surface was done in the same solution in a united technological process. After the process of realization the samples were washed in distilled water. The polystyrene film was removed mechanically and boiling in acetone. Then samples were cut into pieces of area 1-3 mm, and were measured electric and photoelectric characteristics. The electrical and photoelectric characteristics have been studded and they were analyzed in the usual way to calculate the ideality factor (n) and barrier height (o). The values of coefficient n and SB height were 1.05-1.07 and 1.1 eV respectively.

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