In this paper we introduce a novel method of making micro-waveguides on silicon surface by the use of the Zone Refining Method. We produce the melting zone by a laser beam focused on the surface of a doped silicon slab to create a melting spot on its surface. By moving the melt zone across the silicon sample we can write a path of higher index of refraction on the silicon. The depth and the width of the waveguide can be determined by the wavelength and the spot diameter of the laser, respectively. We demonstrate the production of 1X4 μm2 channel on the silicon, by using 532 nm laser beam. This method can be applied in microelectronics for the manufacture of light waveguides on integrated optoelectronics ICs.
In previous work we demonstrated a new method for shaping of pulsed IR (λ=1.55μm) laser probe beam in silicon. The shaping was done by a second pump pulsed laser beam at 0.532μm and 17ns pulse width which simultaneously and collinearly, illuminates the silicon surface with the IR beam. Following the Plasma Dispersion Effect (PDE), and in proportion to its spatial intensity distribution, the pump laser beam shapes the point spread function (PSF) by controlling the lateral transmission of the IR probe beam. In this paper we report on improvement by factor of 10 in the PSF of the probe beam. We use for the pump beam a pico-second laser at wavelength of 775nm. The use of shorter pulse width for the pump laser allows us to reduce the PSF of the probe beam to diameter of ~2μm, so far, which is smaller by factor of 10 from what we had before. Also, the penetration depth of the 775 nm pump beam in silicon is ~10μm compeer to ~1μm for the 0.532μm laser, which allows probe beam shaping inside the silicon. The use of the shaped probe beam in laser scanning microscopy allows imaging and wide range of contactless electrical measurements in silicon integrated circuits (IC) for failure analysis purposes. We propose this shaping method to overcome the diffraction resolution limit in silicon microscopy on and deep under the silicon surface depending on the wavelength of the pump laser and its temporal pulse width.
In this paper we present a new method for shaping of a pulsed IR (λ=1550 nm) laser beam in silicon. The shaping is based on plasma dispersion effect (PDE). The shaping is done by a second pulsed pump laser beam at 532 nm which simultaneously and collinearly illuminates the silicon’s surface with the IR beam. Following the PDE, and in proportion to its spatial intensity distribution, the 532 nm laser beam shapes the point spread function (PSF) by controlling the lateral transmission of the IR probe beam. The use of this probe in laser scanning microscope allows imaging and wide range of contactless electrical measurements in silicon integrated circuits (IC) being under operation e.g. for failure analysis purposes. We propose this shaping method to overcome the diffraction resolution limit in silicon microscopy on and deep under the silicon surface depending on the wavelength of the pump laser and its temporal pulse width. This approach is similar to the stimulated emission depletion (STED) concept previously introduced in scanning fluorescence microscopy.
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