The scaling-down evolution of semiconductor devices will ultimately attend fundamental limits as transistor reach the nanoscale aria. In this context the MOSFET models must give the process variations and the relevant characteristics like current, conductance, transconductance, capacitances, flicker thermal or high frequency noise and distortion. The new challenge of nanotechnology needs very accurate models for active devices. The design of linear analog circuits lacks models for state-of-the-art MOS transistors to accurately describe distortion effects. This is mainly due to inaccurate modelling of the mobility degradation effect i.e. the dependence of carrier mobility in the inversion layer on the gate
normal electric field. For short-channel devices the influence of series resistance becomes important and depends on the gate voltage. The drain current expression incorporating a new mobility relation obtained from quantum mechanical transport analysis and the series resistance influence is in good agreement with experiment.
The paper presents both conceptual and computational features of quantum transport in semiconductor nanostructures. The results comprise microelectronic structures (MOSFETs, heterojunction devices) where the quantum effects count as well as nanometer-sized semiconductor structures.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.