CONFERENCE PROCEEDINGS
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Marco Guévremont
Sr Product Manager
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Publications (5)
Proceedings Article | 12 October 2012 Paper
Understanding and enabling laser processing of solar materials through temporal pulse control
M. Rekow, T. Panarello, Nicolas Falletto, Marco Guevremont
Proceedings Volume 8473, 847303 (2012) https://doi.org/10.1117/12.935059
KEYWORDS: Pulsed laser operation, Solar cells, Laser drilling, Transparent conductors, Silicon, Laser processing, Optical lithography, Beam shaping, Laser ablation, Semiconducting wafers
Proceedings Article | 2 June 2003 Paper
Spectroscopic ellipsometry for lithography front-end level CD control: a complete analysis for production integration
David Herisson, DaniEle Neira, Cyril Fernand, Philippe Thony, Daniel Henry, Stephanie Kremer, Marco Polli, Marco Guevremont, Assim Elazami
Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.485031
KEYWORDS: Single crystal X-ray diffraction, Critical dimension metrology, Lithography, Scanning electron microscopy, Scatterometry, Metrology, Spectroscopic ellipsometry, Electron microscopes, Process control, Semiconducting wafers
Proceedings Article | 2 June 2003 Paper
Spectroscopic Ellipsometry based Scatterometry enabling 193nm Litho and Etch process control for the 110nm technology node and beyond
Thomas Hingst, Thomas Marschner, Manfred Moert, Jan Homilius, Marco Guevremont, John Hopkins, Assim Elazami
Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.485011
KEYWORDS: Scatterometry, Semiconducting wafers, Single crystal X-ray diffraction, Photomasks, Critical dimension metrology, Process control, Scatter measurement, Scanning electron microscopy, Finite element methods, Spectroscopic ellipsometry
Proceedings Article | 16 July 2002 Paper
Spectral scatterometry for 2D trench metrology of low-K dual-damascene interconnect
Proceedings Volume 4689, (2002) https://doi.org/10.1117/12.473457
KEYWORDS: Scatterometry, Critical dimension metrology, Atomic force microscopy, Scanning electron microscopy, Transmission electron microscopy, Silicon, Metrology, Dielectrics, Reactive ion etching, Semiconducting wafers
Proceedings Article | 22 August 2001 Paper
Implementation of spectroscopic critical dimension (SCD) (TM) for gate CD control and stepper characterization
Proceedings Volume 4344, (2001) https://doi.org/10.1117/12.436771
KEYWORDS: Single crystal X-ray diffraction, Critical dimension metrology, Semiconducting wafers, Scanning electron microscopy, Process control, Spectroscopy, Spectroscopes, Metrology, Precision measurement, Control systems
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