In prior work, the capability of novel nanomachining processes to repair TaN EUV absorber materials was shown using 1.8 aspect ratio (AR) AFM tips in line and space patterns down to 90 nm half-pitch. While these repair results were well within the requirements for EUV printability, they only demonstrated the capability to repair an absorber material which has become obsolete with the rapid development of EUVL technology. The introduction of boron into the absorber chemistry indicates a significant increase in the hardness of this material which can be a significant factor in tip deflection in nanomachining. In this work, test repair results are shown for an advanced EUV absorber stack containing a TaBN formulation. The repair dimensional accuracy and repeatability are analyzed along with the throughput and tip wear rates for this nanomachining process. The capability of the BitClean process to clean and finish these repairs will also be shown for this absorber type.
Progress is aggressively being made to advance nanomachining photomask repair technology to the next level of performance. This next level would allow for the dimensional modification of surfaces using diamond AFM tips (NanoBits) with nominal aspect ratios (AR’s) greater than or equal to 1.3 (including 1.8) in the smallest features in production. Prior work along these lines will be presented with new results from a novel process with comparison to established nanomachining processes. These results will evaluate test repairs on the most advanced photomasks currently in production including OMOG and EUV.
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