Dr. Maria Eloisa Castagna Profile

Dr. Maria Eloisa Castagna

Researcher at STMicroelectronics

SPIE Involvement:

Author

Publications (2)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 21 June 2004 Paper

Si-based rare-earth-doped light-emitting devices

Maria Eloisa Castagna, Salvatore Coffa, Mariantonietta Monaco

Proceedings Volume 5366, (2004) https://doi.org/10.1117/12.528989

KEYWORDS: Silicon, Dielectrics, Erbium, Oxides, Molybdenum, Ions, Electrons, External quantum efficiency, Electroluminescence, Annealing

Read Abstract +

We report on the fabrication and performances of highly efficient Si-based light sources. The devices consist of MOS structures with erbium (Er) implanted in the thin gate oxide. The devices exhibit strong 1540 nm electroluminescence at 300K with a 10% external quantum efficiency, comparable to that of standard light emitting diodes using III-V semiconductors. Emission at different wavelenghts has been achieved incorporating different rare earths (Ce, Tb, Yb, Pr) in the gate dielectric. RE excitation is caused by hot electrons impact and oxide wearout limits the reliability of the devices. Much more stable light emitting MOS devices have been fabricated using Er-doped SRO (Silicon Rich Oxide) films as gate dielectric. These devices show a high stability, with an external quantum efficiency reduced to 0.2%. In these devices different pumping mechanisms for the Er ions are simultaneously operating: Er can be excited by direct hot electron impact (like in stoichiometric oxide MOS) and by energy transfer from excited Si nanostructures, depending on the Si excess in the film. We propose a model to describe the electrical conduction mechanism in a Silicon Rich Oxide film. The electrical characteiristics can be fitted by a Schottky emission mechanism at low electrical fields and by a SCLC(Space Charge Limited Conduction) model for high elctrical fields. Data obtained from C-V measurements confirm the proposed model.

Proceedings Article | 21 June 2004 Paper

Si-based resonant cavity light-emitting devices

Maria Eloisa Castagna, Salvatore Coffa, Anna Muscara, Alessandro Costa, Sebastiano Ravesi, Simona Lorenti, Marco Camalleri

Proceedings Volume 5366, (2004) https://doi.org/10.1117/12.529135

KEYWORDS: Silicon, Optical microcavities, Reflectivity, Semiconducting wafers, Mirrors, Transmission electron microscopy, Luminescence, Light emitting diodes, Refractive index, Annealing

Read Abstract +

We report on the fabrication and characterization of Si/SiO₂ Fabry-Perot microcavities. These structures are used to enhance the external quantum emission along the cavity axis and the spectral purity of emission from Rare earth doped and undoped SiOx (x <= 2)films that are used as active media to fabricate a Si based RCLED (Resonant Cavity Light emitting Devices). These structures are fabricated by chemical vapour deposition on a silicon substrate. The microcavities are tuned at different wavelengths: 540nm, 980nm, 1540nm, 780nm and 850nm (characteristic emission wavelength respectively for Tb, Yb and Er and Silicon Rich Oxide (SRO)). The reflectivity of the microcavities is of 97% and the factor quality ranges from 50 (for the cavity tuned at 540nm) to 95 (for the cavities tuned at 980nm and 1540nm) and 150 (for the cavity tuned at 780nm and 850 nm). These cavities have been characterized by TEM analysis to evaluate films uniformity, thickness and densification after annealing process for temperature ranging from 800° to 1100°C. The reflectivity and photoluminescence spectra show resonant wavelengths in agreement with the calculated values. A new structure to electrically pump the active media has been designed. The electrical properties of the active media have been analysed. An enhancement of the photoluminescence signal of twenty times have been achieved for the selected emission wavelength.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years