Dr. Marion B. Reine
Consultant on Infrared Detectors
SPIE Involvement:
Author
Area of Expertise:
Infrared detectors , Physics of semiconductor devices
Profile Summary

Dr. Marion B. Reine is an independent consultant on the physics and technology of semiconductor infrared photon detectors. He provides technical analysis and support to both government and industry on photon detectors for a wide range of wavelengths and applications. He also collaborates with the Computational Electronics Group in the Department of Electrical and Computer Engineering at Boston University, Boston, Massachusetts on numerical simulations of nBn infrared detectors.

Dr. Reine’s graduate education in semiconductor physics was done at the Massachusetts Institute of Technology, after which he joined the Honeywell Radiation Center in 1969.

Dr. Reine’s career in infrared detectors at BAE Systems in Lexington, Massachusetts and its legacy companies (Honeywell, Loral, Lockheed Martin) spanned over forty years. He achieved international recognition as a leader in the science and technology of HgCdTe infrared detectors. His career included periods as an individual technical contributor, a supervisory manager, and a program manager. His individual technical focus was on the design, analysis, device physics, science and technology of new and advanced semiconductor infrared detectors for a wide variety of DoD and NASA applications. Most of his work was in the semiconductor alloy HgCdTe, but he also developed detectors in other semiconductors such as AlGaN and InGaAs.

Dr. Reine is skilled in semiconductor device physics, design, analysis and modeling, in pre-proposal and proposal organization and writing, in program formulation and organization, in mentoring and teaching young scientists and engineers, and in fostering and directing university/industry research collaborations.

In 1979 he was named a Honeywell Fellow. In 1998 he was elected a Fellow of the American Physical Society “for technical leadership in the design and development of innovative photoconductive and photovoltaic HgCdTe devices for advanced infrared detectors.” In 2004 he received th
Publications (27)

Proceedings Article | 24 June 2014 Paper
Proc. SPIE. 9070, Infrared Technology and Applications XL
KEYWORDS: Sensors, Resistance, Indium arsenide, Photodiodes, Numerical simulations, Diffusion, Infrared detectors, Thermal modeling, Infrared sensors, Physics

Proceedings Article | 18 June 2013 Paper
Proc. SPIE. 8704, Infrared Technology and Applications XXXIX
KEYWORDS: Sensors, Numerical simulations, Indium arsenide, Diffusion, Neodymium, Resistance, Infrared detectors, Photodiodes, Back illuminated sensors, Diodes

Proceedings Article | 11 June 2013 Paper
Proc. SPIE. 8704, Infrared Technology and Applications XXXIX
KEYWORDS: Mercury cadmium telluride, Infrared detectors, Sensors, Crystals, Infrared radiation, Mercury, Thermography, Semiconductors, Infrared sensors, Imaging systems

Proceedings Article | 31 May 2012 Paper
Proc. SPIE. 8353, Infrared Technology and Applications XXXVIII
KEYWORDS: Diffusion, Quantum efficiency, Indium arsenide, Sensors, 3D modeling, Back illuminated sensors, Electrons, Numerical simulations, Detector arrays, Doping

Proceedings Article | 26 August 2010 Paper
Proc. SPIE. 7780, Detectors and Imaging Devices: Infrared, Focal Plane, Single Photon
KEYWORDS: Diffusion, Arsenic, Mercury cadmium telluride, Diodes, Mercury, Photodiodes, Liquid phase epitaxy, Doping, Long wavelength infrared, Cadmium

Showing 5 of 27 publications
Conference Committee Involvement (1)
Infrared Photoelectronics
30 August 2005 | Warsaw, Poland
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