Optical calculation and experimental data are presented for the impact of reflectivity of the Mo/Si multilayers for EUV photomasks deposited by secondary Ion Beam Deposition (IBD). Simulations of Mo/Si multilayer stacks in which the bottom-most 30 bilayers remain intermixed, and up to ten top bilayers are not intermixed at all or less intermixed is revealed to have the benefit of approximately 2.5% of reflectivity improvement while the simulation of 40-bilayer stack which has a typical intermixed layers of 1.1nm at the interface on top of the Silicon and 0.5nm at the interface on top of the Molybdenum indicate a maximum reflectivity of 68.5%. The multiple beam voltage deposited multilayers with lower beam voltage for top bilayers and with higher beam voltage for bottom bilayers are demonstrated and discussed using XRR measurement and TEM observation.
Despite several competing technologies for Augmented Reality (AR) displays, surface relief gratings are amongst the most promising solutions. While Reactive Ion Etching (RIE), failed to produce slanted trenches due to the lack of directional control, Reactive Ion Beam Etching (RIBE) is a technique well suited to fabricate theses gratings via a combination of physical and chemical etching processes and substrate tilting. Along with several advantages of RIBE over RIE, such as enhanced control of the slant angle, achieving full wafer etching with superior uniformity for static, off-normal incidence process conditions have remained a challenge. Veeco’s latest generation IBE source technology with multi-zone electromagnets is a proven solution to fabricate highly uniform blanket and patterned 200 mm wafers under static, off-angle conditions. Combining this technology with RIBE/IBE, we have created uniform off-angle featured wafers such as slanted gratings with different slanted angles (0-60˚) which is a critical approach in the AR applications.
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