In this paper we will study the influence of InGaN underlayer on efficiency of InGaN-based LEDs grown by plasma-assisted molecular beam epitaxy (PAMBE). We observed that LEDs with the thinnest underlayer have the highest efficiency. This finding agrees with the theory that the defects, which are buried in standard LEDs are in fact generated during the growth of GaN in MOVPE at high temperature. In case of PAMBE, the growth temperature of GaN is 300°C lower, and these defects are not generated in the first place and there is no need for an InGaN underlayer.
A micro-photoluminescence setup is used to investigate the ambipolar diffusion of charge
carriers in InGaN quantum wells (QW) grown by molecular beam epitaxy. The thickness of
the active region varies between 2.6 and 25 nm.
Our results show for all samples diffusion in the range of a few μm. Additionally, a larger
QW thickness is accompanied by a smaller luminescence spot radius in our experiment.
However, a larger dark carrier diffusion with increasing QW thickness cannot be excluded
due to an increasing carrier lifetime. Moving away from the excitation center leads to a
stronger tilt of the QW potential due to lower carrier density, consequently suppressing
radiative recombination.
III-nitride semiconductor system is widely used in many electronic and optoelectronic applications. The presence of extremely high piezoelectric field in quantum wells (QWs) is known to cause severe separation of electron and hole wavefunctions and limits the thickness of QWs used in devices. We have recently shown that wide QWs are also a viable solution in optoelectronic devices. In this paper we will discuss the physics of recombination in wide InGaN QWs. We will show that the piezoelectric field is fully screened in case of wide InGaN QW and light emission occurs through excited states with high wavefunction overlap.
In this study laser diodes with different InGaN quantum well thickness up to 25 nm are analyzed. For those devices efficient screening of the piezoelectric field and operation on excited states was reported. We observe the time-dependent behavior of the intensity and emission spectrum below threshod operation, which can give insights about the QW tilt and the wave function overlap. In particular we observe a strong rise in intensity and a wavelength shift at the trailing edge of the pulse. Furthermore, we investigate the laser operation of the different quantum well width diodes showing unusual spectral-temporal behavior especially for the wide QW devices.
Wide well blue InGaN LEDs and laser diodes show high internal quantum efficiency and high differential optical gain. We investigate the contribution of recombination from ground and excited confined states in MBE grown LED or laser structures with 2.6 nm, 7.8 nm and 15 nm wide InGaN wells by low and room temperature µEL and µPL. For the 7.8 nm well, the blue-shift caused by piezoelectric field screening (QCSE) and transition from ground to higher confined states are observed separably. The 25 nm emits at the band edge of the fully screened InGaN region and shows pronounced state filling.
We present LED profiting from the bottom-tunnel junction (BTJ) construction. The BTJ design aligns the polarization fields in a desired direction in the vicinity of active region and inverts the ordering of the layer stack in the structure. This leads the situation were conductive, n-type layer is on the very top of the structure. Since current spreading in n-type material is much better than in p-type, BTJ-based light emitters open new possibilities in heterostructure design. In this talk we present new light emitting structures grown by plasma-assisted MBE based on BTJ platform and compare prospects for bottom and top tunnel junction devices.
New approach towards efficient light emission with bottom-tunnel junctions is developed. The bottom-tunnel junction design aligns the polarization fields in a desired direction in the vicinity of quantum well, while simultaneously eliminating the need for p-type contacts, and allowing efficient current spreading. By preventing electron overshoot past quantum wells, it disables carrier recombination in undesired regions of the heterostructures, increasing injection efficiency and opening new possibilities in heterostructure design. InGaN-based buried-tunnel junction is used to construct first monolithically grown p-type-down laser diode on n-type, Ga-polar bulk GaN substrate. Unique advantages of such construction that enables to separate design of carrier injection and optical mode confinement for such laser diode structures is discussed.
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