Mr. Matt Malloy Profile

Matt Malloy

Metrology Program Manager

Publications (18)

SPIE Journal Paper | 23 August 2016

Measuring multielectron beam imaging fidelity with a signal-to-noise ratio analysis

Maseeh Mukhtar, Benjamin Bunday, Kathy Quoi, Matt Malloy, Brad Thiel

JM3, Vol. 15, Issue 03, 034004, (August 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.3.034004

KEYWORDS: Signal to noise ratio, Electrons, Monte Carlo methods, Silicon, Image processing, Scanning electron microscopy, Sensors, Inspection, Defect inspection, Defect detection

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Proceedings Article | 18 March 2016 Paper

Actinic review of EUV masks: performance data and status of the AIMS EUV System

Dirk Hellweg, Sascha Perlitz, Krister Magnusson, Renzo Capelli, Markus Koch, Matt Malloy

Proceedings Volume 9776, 97761A (2016) https://doi.org/10.1117/12.2219247

KEYWORDS: Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Metrology, Scanners, EUV optics, Particles, Prototyping, Reticles, Electromagnetic coupling

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Proceedings Article | 9 November 2015 Paper

Actinic review of EUV masks: status and recent results of the AIMS EUV system

Sascha Perlitz, Jan Hendrik Peters, Markus Weiss, Dirk Hellweg, Renzo Capelli, Krister Magnusson, Matt Malloy, Stefan Wurm

Proceedings Volume 9635, 96351D (2015) https://doi.org/10.1117/12.2205054

KEYWORDS: Extreme ultraviolet, Photomasks, Prototyping, Extreme ultraviolet lithography, Electromagnetic coupling, Metrology, Calibration, Scanners, Image acquisition, Image processing

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Proceedings Article | 4 September 2015 Paper

Enabling inspection solutions for future mask technologies through the development of massively parallel E-Beam inspection

Matt Malloy, Brad Thiel, Benjamin Bunday, Stefan Wurm, Vibhu Jindal, Maseeh Mukhtar, Kathy Quoi, Thomas Kemen, Dirk Zeidler, Anna Lena Eberle, Tomasz Garbowski, Gregor Dellemann, Jan Hendrik Peters

Proceedings Volume 9661, 96610O (2015) https://doi.org/10.1117/12.2196120

KEYWORDS: Inspection, Photomasks, Semiconducting wafers, Defect inspection, Extreme ultraviolet, Imaging systems, Wafer inspection, Optical inspection, Wafer-level optics, Optics manufacturing

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The new device architectures and materials being introduced for sub-10nm manufacturing, combined with the complexity of multiple patterning and the need for improved hotspot detection strategies, have pushed current wafer inspection technologies to their limits. In parallel, gaps in mask inspection capability are growing as new generations of mask technologies are developed to support these sub-10nm wafer manufacturing requirements. In particular, the challenges associated with nanoimprint and extreme ultraviolet (EUV) mask inspection require new strategies that enable fast inspection at high sensitivity. The tradeoffs between sensitivity and throughput for optical and e-beam inspection are well understood. Optical inspection offers the highest throughput and is the current workhorse of the industry for both wafer and mask inspection. E-beam inspection offers the highest sensitivity but has historically lacked the throughput required for widespread adoption in the manufacturing environment. It is unlikely that continued incremental improvements to either technology will meet tomorrow’s requirements, and therefore a new inspection technology approach is required; one that combines the high-throughput performance of optical with the high-sensitivity capabilities of e-beam inspection.

To support the industry in meeting these challenges SUNY Poly SEMATECH has evaluated disruptive technologies that can meet the requirements for high volume manufacturing (HVM), for both the wafer fab [1] and the mask shop. Highspeed massively parallel e-beam defect inspection has been identified as the leading candidate for addressing the key gaps limiting today’s patterned defect inspection techniques. As of late 2014 SUNY Poly SEMATECH completed a review, system analysis, and proof of concept evaluation of multiple e-beam technologies for defect inspection. A champion approach has been identified based on a multibeam technology from Carl Zeiss. This paper includes a discussion on the need for high-speed e-beam inspection and then provides initial imaging results from EUV masks and wafers from 61 and 91 beam demonstration systems. Progress towards high resolution and consistent intentional defect arrays (IDA) is also shown.

Proceedings Article | 19 March 2015 Paper

Simulating massively parallel electron beam inspection for sub-20 nm defects

Benjamin Bunday, Maseeh Mukhtar, Kathy Quoi, Brad Thiel, Matt Malloy

Proceedings Volume 9424, 94240J (2015) https://doi.org/10.1117/12.2175573

KEYWORDS: Signal to noise ratio, Silicon, Image processing, Defect inspection, Sensors, Defect detection, Scanning electron microscopy, Inspection, Computer simulations, Optical simulations

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Proceedings Article | 19 March 2015 Paper

Further advancing the throughput of a multi-beam SEM

Thomas Kemen, Matt Malloy, Brad Thiel, Shawn Mikula, Winfried Denk, Gregor Dellemann, Dirk Zeidler

Proceedings Volume 9424, 94241U (2015) https://doi.org/10.1117/12.2188560

KEYWORDS: Scanning electron microscopy, Sensors, Electron beams, Signal to noise ratio, Image resolution, Semiconductors, Beam splitters, Brain, Image processing, Microscopy

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Proceedings Article | 19 March 2015 Paper

Massively parallel E-beam inspection: enabling next-generation patterned defect inspection for wafer and mask manufacturing

Matt Malloy, Brad Thiel, Benjamin Bunday, Stefan Wurm, Maseeh Mukhtar, Kathy Quoi, Thomas Kemen, Dirk Zeidler, Anna Lena Eberle, Tomasz Garbowski, Gregor Dellemann, Jan Hendrik Peters

Proceedings Volume 9423, 942319 (2015) https://doi.org/10.1117/12.2175535

KEYWORDS: Inspection, Defect inspection, Photomasks, Semiconducting wafers, Optical inspection, Wafer inspection, Extreme ultraviolet, Manufacturing, Prototyping, Optics manufacturing

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Proceedings Article | 2 October 2014 Paper

Assessing the viability of multi-electron beam wafer inspection for sub-20nm defects

Brad Thiel, Michael Lercel, Benjamin Bunday, Matt Malloy

Proceedings Volume 9236, 92360E (2014) https://doi.org/10.1117/12.2069302

KEYWORDS: Signal to noise ratio, Light scattering, Inspection, Semiconducting wafers, Defect inspection, Interference (communication), Contrast transfer function, Scanning electron microscopy, Scattering, Signal detection

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Proceedings Article | 20 September 2013 Paper

2013 mask industry survey

Matt Malloy

Proceedings Volume 8880, 88800K (2013) https://doi.org/10.1117/12.2033255

KEYWORDS: Photomasks, Binary data, Optical proximity correction, Pellicles, Manufacturing, Inspection, Phase shifts, Critical dimension metrology, Glasses, Etching

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Proceedings Article | 8 November 2012 Paper

The E-beam resist test facility: performance testing and benchmarking of E-beam resists for advanced mask writers

Matt Malloy, Il Yong Jang, Mac Mellish, Lloyd Litt, Ananthan Raghunathan, John Hartley

Proceedings Volume 8522, 85220N (2012) https://doi.org/10.1117/12.978665

KEYWORDS: Photomasks, Photoresist processing, Semiconducting wafers, Metrology, Line width roughness, Silicon, Finite element methods, Polymers, Electron beam lithography, Extreme ultraviolet

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With each new generation of e-beam mask writers comes the ability to write leading edge photomasks with improved patterning performance and increased throughput. However, these cutting-edge e-beam tools are often used with older generation resists, preventing the end-user from taking full advantage of the tool’s potential. The generation gap between tool and resist will become even more apparent with the commercialization of multi-beam mask writers, which are expected to be available for pilot line use around 2015. The mask industry needs resists capable of meeting the resolution, roughness, and sensitivity requirements of these advanced tools and applications.

The E-beam Resist Test Facility (ERTF) has been established to fill the need for consortium-based testing of e-beam resists for mask writing applications on advanced mask writers out to the 11nm half-pitch node and beyond. SEMATECH and the College of Nanoscale Science and Engineering (CNSE) began establishing the ERTF in early 2012 to test e-beam resist samples from commercial suppliers and university labs against the required performance metrics for each application at the target node. Operations officially began on June 12, 2012, at which time the first e-beam resist samples were tested. The ERTF uses the process and metrology infrastructure available at CNSE, including a Vistec VB300 Vectorscan e-beam tool adjusted to operate at 50kv. Initial testing results show that multiple resists already meet, or are close to meeting, the resolution requirements for mask writing at the 11nm node, but other metrics such as line width roughness still need improvement.

An overview of the ERTF and its capabilities is provided here. Tools, baseline processes, and operation strategy details are discussed, and resist testing and benchmarking results are shown. The long-term outlook for the ERTF and plans to expand capability and testing capacity, including resist testing for e-beam direct write lithography, are also discussed.

Proceedings Article | 8 November 2012 Paper

2012 Mask Industry Survey

Matt Malloy, Lloyd Litt

Proceedings Volume 8522, 852203 (2012) https://doi.org/10.1117/12.978704

KEYWORDS: Photomasks, Pellicles, Optical proximity correction, Binary data, Etching, Manufacturing, Semiconductors, Optical lithography, Semiconductor manufacturing, Vestigial sideband modulation

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SPIE Journal Paper | 1 July 2011

Technology review and assessment of nanoimprint lithography for semiconductor and patterned media manufacturing

Matt Malloy, Lloyd Litt

JM3, Vol. 10, Issue 03, 032001, (July 2011) https://doi.org/10.1117/12.10.1117/1.3642641

KEYWORDS: Nanoimprint lithography, Semiconductors, Manufacturing, Lithography, Inspection, Overlay metrology, Beam propagation method, Semiconducting wafers, Line width roughness, Optical alignment

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Proceedings Article | 2 April 2011 Paper

Jet and flash imprint defectivity: assessment and reduction for semiconductor applications

Matt Malloy, Lloyd Litt, Steve Johnson, Douglas Resnick, David Lovell

Proceedings Volume 7970, 797006 (2011) https://doi.org/10.1117/12.881530

KEYWORDS: Inspection, Semiconducting wafers, Nanoimprint lithography, Particles, Semiconductors, Lithography, Glasses, Wafer inspection, Defect detection, Manufacturing

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Proceedings Article | 1 April 2010 Paper

Step and flash imprint lithography for semiconductor high volume manufacturing?

M. Malloy, L. Litt

Proceedings Volume 7637, 763706 (2010) https://doi.org/10.1117/12.846617

KEYWORDS: Lithography, Inspection, Semiconductors, Line width roughness, Semiconducting wafers, Optical alignment, Nanoimprint lithography, Particles, High volume manufacturing, Semiconductor manufacturing

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Proceedings Article | 18 March 2009 Paper

SEMATECH's nanoImprint program: a key enabler for nanoimprint introduction

Lloyd Litt, Matt Malloy

Proceedings Volume 7271, 72711Q (2009) https://doi.org/10.1117/12.814370

KEYWORDS: Nanoimprint lithography, Photomasks, Semiconducting wafers, Overlay metrology, Mask cleaning, Manufacturing, Nanotechnology, Lithography, CMOS technology, Extreme ultraviolet

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Proceedings Article | 15 April 2008 Paper

Photons, electrons, and acid yields in EUV photoresists: a progress report

Robert Brainard, Elsayed Hassanein, Juntao Li, Piyush Pathak, Brad Thiel, Franco Cerrina, Richard Moore, Miguel Rodriguez, Boris Yakshinskiy, Elena Loginova, Theodore Madey, Richard Matyi, Matt Malloy, Andrew Rudack, Patrick Naulleau, Andrea Wüest, Kim Dean

Proceedings Volume 6923, 692325 (2008) https://doi.org/10.1117/12.773869

KEYWORDS: Electrons, Photons, Quantum efficiency, Extreme ultraviolet, Polymers, Monte Carlo methods, Extreme ultraviolet lithography, Oscillators, Line width roughness, Electronics

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Proceedings Article | 28 March 2008 Paper

Film quantum yields of EUV and ultra-high PAG photoresists

Elsayed Hassanein, Craig Higgins, Patrick Naulleau, Richard Matyi, Gregg Gallatin, Gregory Denbeaux, Alin Antohe, Jim Thackeray, Kathleen Spear, Charles Szmanda, Christopher Anderson, Dimitra Niakoula, Matthew Malloy, Anwar Khurshid, Cecilia Montgomery, Emil Piscani, Andrew Rudack, Jeff Byers, Andy Ma, Kim Dean, Robert Brainard

Proceedings Volume 6921, 69211I (2008) https://doi.org/10.1117/12.774099

KEYWORDS: Quantum efficiency, Extreme ultraviolet lithography, Photoresist materials, Extreme ultraviolet, X-rays, Absorbance, Photons, Coating, Reflectometry, Line edge roughness

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Proceedings Article | 24 March 2006 Paper

The EUV resist test center at Sematech-North

Klaus Lowack, Andy Rudack, Kim Dean, Matt Malloy, Mike Lercel

Proceedings Volume 6151, 61512U (2006) https://doi.org/10.1117/12.657683

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers, Real-time computing, Photoresist materials, Lithography, Photoresist developing, Contamination, Line edge roughness, Reticles

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Showing 5 of 18 publications

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