Dr. Matthias Sabathil Profile

Dr. Matthias Sabathil

at ams-OSRAM International GmbH

SPIE Involvement:

Author

Publications (5)

Proceedings Article | 28 February 2012 Paper

Luminescence and efficiency optimization of InGaN/GaN core-shell nanowire LEDs by numerical modelling

Friedhard Römer, Marcus Deppner, Zhelio Andreev, Christopher Kölper, Matthias Sabathil, Martin Strassburg, Johannes Ledig, Shunfeng Li, Andreas Waag, Bernd Witzigmann

Proceedings Volume 8255, 82550H (2012) https://doi.org/10.1117/12.908207

KEYWORDS: Light emitting diodes, Quantum wells, Luminescence, Absorption, Gallium nitride, Quantum efficiency, Polarization, Internal quantum efficiency, Quantization, Nanowires

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Proceedings Article | 21 February 2011 Paper

Optical properties of individual GaN nanorods for light emitting diodes: influence of geometry, materials, and facets

C. Kölper, M. Sabathil, B. Witzigmann, F. Römer, W. Bergbauer, M. Strassburg

Proceedings Volume 7933, 793314 (2011) https://doi.org/10.1117/12.874984

KEYWORDS: Gallium nitride, Interfaces, Light emitting diodes, Optical properties, Cladding, Mirrors, Silver, Refractive index, Phase shifts, Nanorods

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Proceedings Article | 19 February 2009 Paper

Temperature dependence of blue InGaN lasers

Stefanie Brüninghoff, Sönke Tautz, Matthias Sabathil, Désirée Queren, Stephan Lutgen, Uwe Strauß

Proceedings Volume 7216, 72161C (2009) https://doi.org/10.1117/12.807979

KEYWORDS: Temperature metrology, Semiconductor lasers, Laser damage threshold, Indium gallium nitride, Quantum wells, Resistance, Continuous wave operation, Doping, Cell phones, Laser applications

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Proceedings Article | 13 February 2007 Paper

Measurement of the internal quantum efficiency of InGaN quantum wells

A. Laubsch, M. Sabathil, G. Bruederl, J. Wagner, M. Strassburg, E. Baur, H. Braun, U. Schwarz, A. Lell, S. Lutgen, N. Linder, R. Oberschmid, B. Hahn

Proceedings Volume 6486, 64860J (2007) https://doi.org/10.1117/12.700829

KEYWORDS: Quantum wells, Gallium nitride, Indium gallium nitride, Temperature metrology, Doping, Light emitting diodes, Luminescence, Internal quantum efficiency, Electron holes, Magnesium

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Proceedings Article | 13 February 2007 Paper

Self-consistent modeling of resonant PL in InGaN SQW LED-structure

M. Sabathil, A. Laubsch, N. Linder

Proceedings Volume 6486, 64860V (2007) https://doi.org/10.1117/12.700461

KEYWORDS: Quantum wells, Indium gallium nitride, Electrons, Electroluminescence, Light emitting diodes, Doping, Luminescence, Absorption, Indium, Data modeling

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