Dr. Maurits van der Schaar Profile

Dr. Maurits van der Schaar

Technical Expert

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Author

Publications (18)

Proceedings Article | 22 February 2021 Presentation + Paper

Presentation + Paper

Novel diffraction-based overlay metrology utilizing phase-based overlay for improved robustness

Masazumi Matsunobu, Toshiharu Nishiyama, Michio Inoue, Richard Housley, Cornel Bozdog, Justin Lim, Brian Watson, Jason Reece, Steve McCandless, Olger Zwier, Maurits van der Schaar, Murat Bozkurt, Masudur al Arif, Elliott McNamara, Pieter Kapel, Alan Khan, Simon Strom, Paul Turner, Ping Olson, Ewoud van West

Proceedings Volume 11611, 1161126 (2021) https://doi.org/10.1117/12.2584759

KEYWORDS: Overlay metrology, Diffraction, Diffraction gratings, Semiconducting wafers

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Proceedings Article | 20 October 2016 Paper

Paper

Eliminating the offset between overlay metrology and device patterns using computational metrology target design

Jianming Zhou, Sarah Wu, Craig Hickman, Ewoud van West, Maurits van der Schaar, Wangshi Zhou, Youping Zhang, Sean Park, Paul Tuffy, Dan Ulmer, Cedric Affentauschegg, Henk Niesing

Proceedings Volume 9778, 97781G (2016) https://doi.org/10.1117/12.2219439

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Proceedings Article | 2 April 2014 Paper

Paper

Improving on-product performance at litho using integrated diffraction-based metrology and computationally designed device-like targets fit for advanced technologies (incl. FinFET)

Kai-Hsiung Chen, GT Huang, KS Chen, C. Hsieh, YC Chen, CM Ke, TS Gau, YC Ku, Kaustuve Bhattacharyya, Jacky Huang, Arie den Boef, Maurits v. d. Schaar, Martijn Maassen, Reinder Plug, Youping Zhang, Steffen Meyer, Martijn van Veen, Chris de Ruiter, Jon Wu, Hua Xu, Tatung Chow, Charlie Chen, Eric Verhoeven, Pu Li, Paul Hinnen, Greet Storms, Kelvin Pao, Gary Zhang, Christophe Fouquet, Takuya Mori

Proceedings Volume 9050, 90500S (2014) https://doi.org/10.1117/12.2047098

KEYWORDS: Overlay metrology, Metrology, Semiconducting wafers, Back end of line, Scanners, Diffraction, Front end of line, Process control, Etching

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Proceedings Article | 13 May 2013 Paper

Paper

Sub-nanometer in-die overlay metrology: measurement and simulation at the edge of finiteness

Henk-Jan Smilde, Martin Jak, Arie den Boef, Mark van Schijndel, Murat Bozkurt, Andreas Fuchs, Maurits van der Schaar, Steffen Meyer, Stephen Morgan, Kaustuve Bhattacharyya, Guo-Tsai Huang, Chih-Ming Ke, Kai-Hsiung Chen

Proceedings Volume 8788, 87881N (2013) https://doi.org/10.1117/12.2020930

KEYWORDS: Overlay metrology, Metrology, Diffraction gratings, Diffraction, Semiconducting wafers, Sensors, Semiconductors, Environmental sensing, Wafer-level optics, Geometrical optics

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Proceedings Article | 10 April 2013 Paper

Paper

On-product overlay enhancement using advanced litho-cluster control based on integrated metrology, ultra-small DBO targets and novel corrections

Kaustuve Bhattacharyya, Chih-Ming Ke, Guo-Tsai Huang, Kai-Hsiung Chen, Henk-Jan Smilde, Andreas Fuchs, Martin Jak, Mark van Schijndel, Murat Bozkurt, Maurits van der Schaar, Steffen Meyer, Miranda Un, Stephen Morgan, Jon Wu, Vincent Tsai, Frida Liang, Arie den Boef, Peter ten Berge, Michael Kubis, Cathy Wang, Christophe Fouquet, L. Terng, David Hwang, Kevin Cheng, TS Gau, Y. C. Ku

Proceedings Volume 8681, 868104 (2013) https://doi.org/10.1117/12.2011878

KEYWORDS: Overlay metrology, Metrology, Semiconducting wafers, Time metrology, Chemical mechanical planarization, Scanners, Diffraction, Thin film coatings, Tin, High volume manufacturing

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Proceedings Article | 3 April 2012 Paper

Paper

Evaluation of a novel ultra small target technology supporting on-product overlay measurements

Henk-Jan Smilde, Arie den Boef, Michael Kubis, Martin Jak, Mark van Schijndel, Andreas Fuchs, Maurits van der Schaar, Steffen Meyer, Stephen Morgan, Jon Wu, Vincent Tsai, Cathy Wang, Kaustuve Bhattacharyya, Kai-Hsiung Chen, Guo-Tsai Huang, Chih-Ming Ke, Jacky Huang

Proceedings Volume 8324, 83241A (2012) https://doi.org/10.1117/12.916382

KEYWORDS: Overlay metrology, Semiconducting wafers, Metrology, Diffraction gratings, Diffraction, Standards development, Reticles, Lithography, Scatterometry, Physics

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Proceedings Article | 20 April 2011 Paper

Paper

Diffraction-based overlay for spacer patterning and double patterning technology

Byoung Hoon Lee, JeongSu Park, Jongsu Lee, Sarohan Park, ChangMoon Lim, Dong-Gyu Yim, Sungki Park, Chan-Ho Ryu, Stephen Morgan, Maurits van de Schaar, Andreas Fuchs, Kaustuve Bhattacharyya

Proceedings Volume 7971, 79712U (2011) https://doi.org/10.1117/12.870473

KEYWORDS: Overlay metrology, Diffraction gratings, Double patterning technology, Diffraction, Optical lithography, Metrology, Resolution enhancement technologies, Semiconducting wafers, Lithography, Scanning electron microscopy

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Proceedings Article | 29 March 2011 Paper

Paper

Litho process control via optimum metrology sampling while providing cycle time reduction and faster metrology-to-litho turn around time

K.-H. Chen, Jacky Huang, W.-T. Yang, C.-M. Ke, Y.-C. Ku, John Lin, Kaustuve Bhattacharyya, Evert Mos, Mir Shahrjerdy, Maurits van der Schaar, Steffen Meyer, Spencer Lin, Jon Wu, Sophie Peng, Albert Li, Nikki Chang, Roy Chu, Cathy Wang

Proceedings Volume 7971, 797105 (2011) https://doi.org/10.1117/12.879218

KEYWORDS: Semiconducting wafers, Metrology, Overlay metrology, Time metrology, Process control, Lithography, Tin, Feedback control, Scanners, Optical lithography

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SPIE Journal Paper | 1 January 2011

New approaches for scatterometry-based metrology for critical distance and overlay measurement and process control

Kaustuve Bhattacharyya, Noelle Wright, Maurits van der Schaar, Arie den Boef, Paul Hinnen, Mir Shahrjerdy, Vivien Wang, Spencer Lin, Cathy Wang, Chih-Ming Ke, Jacky Huang, Willie Wang

JM3, Vol. 10, Issue 1, 013013, (January 2011) https://doi.org/10.1117/12.10.1117/1.3532076

KEYWORDS: Overlay metrology, Semiconducting wafers, Metrology, Scanners, Critical dimension metrology, Birefringence, Distance measurement, Process control, Lithography, Scanning electron microscopy

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Proceedings Article | 2 April 2010 Paper

Paper

Achieving optimum diffraction based overlay performance

Philippe Leray, David Laidler, Shaunee Cheng, Martyn Coogans, Andreas Fuchs, Mariya Ponomarenko, Maurits van der Schaar, Peter Vanoppen

Proceedings Volume 7638, 76382B (2010) https://doi.org/10.1117/12.848524

KEYWORDS: Chemical mechanical planarization, Overlay metrology, Metrology, Diffraction, Semiconducting wafers, Polarization, Silicon, Diffraction gratings, Oxides, Scatterometry

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Proceedings Article | 2 April 2010 Paper

Paper

A paradigm shift in scatterometry-based metrology solution addressing the most stringent needs of today as well as future lithography

C. Ke, Victor Shih, Jacky Huang, L. Chen, Willie Wang, G. Huang, W. Yang, Sophia Wang, C. Liang, H. Liu, H. Lee, L. Terng, T. Gau, John Lin, Kaustuve Bhattacharyya, Maurits van der Schaar, Noelle Wright, Marc Noot, Mir Shahrjerdy, Vivien Wang, Spencer Lin, Jon Wu, Sophie Peng, Gavin Liu, Wei-Shun Tzeng, Jim Chen, Andreas Fuchs, Omer Adam, Cathy Wang

Proceedings Volume 7638, 76383P (2010) https://doi.org/10.1117/12.853318

KEYWORDS: Overlay metrology, Metrology, Semiconducting wafers, Scanners, Back end of line, Lithography, 3D metrology, Finite element methods, Scatterometry, Critical dimension metrology

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Proceedings Article | 11 December 2009 Paper

Paper

A sophisticated metrology solution for advanced lithography: addressing the most stringent needs of today as well as future lithography

Victor Shih, Jacky Huang, Willie Wang, G. T. Huang, H. L. Chung, Alan Ho, W. T. Yang, Sophia Wang, Chih-Ming Ke, L. J. Chen, C. R. Liang, H. H. Liu, H. J. Lee, L. G. Terng, T. S. Gau, John Lin, Kaustuve Bhattacharyya, Maurits van der Schaar, Noelle Wright, Mir Shahrjerdy, Vivien Wang, Spencer Lin, Jon Wu, Sophie Peng, Dennis Chang, Cathy Wang, Andreas Fuchs, Omer Adam, Karel van der Mast

Proceedings Volume 7520, 75201A (2009) https://doi.org/10.1117/12.837353

KEYWORDS: Overlay metrology, Semiconducting wafers, Metrology, Scanners, Lithography, Back end of line, Metals, Scatterometry, Front end of line, Signal to noise ratio

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Proceedings Article | 23 March 2009 Paper

Paper

Evaluation of a new metrology technique to support the needs of accuracy, precision, speed, and sophistication in near-future lithography

Chih-Ming Ke, Jimmy Hu, Willie Wang, Jacky Huang, H. Chung, C. Liang, Victor Shih, H. Liu, H. Lee, John Lin, Y. Fan, Kaustuve Bhattacharyya, Maurits van der Schaar, Noelle Wright, Kiwi Yuan, Vivien Wang, Cathy Wang, Spencer Lin, Mir Shahrjerdy, Andreas Fuchs, Karel van der Mast

Proceedings Volume 7272, 72720A (2009) https://doi.org/10.1117/12.814860

KEYWORDS: Overlay metrology, Metrology, Scatterometry, Semiconducting wafers, Critical dimension metrology, Lithography, Finite element methods, Photomasks, Scanners, Double patterning technology

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Proceedings Article | 1 December 2008 Paper

Paper

A comprehensive look at a new metrology technique to support the needs of lithography performance in near future

Jimmy Hu, Chih-Ming Ke, Willie Wang, Jacky Huang, H. L. Chung, C. R. Liang, Victor Shih, H. Liu, H. J. Lee, L. G. Terng, Y. D. Fan, Maurits van der Schaar, Kiwi Yuan, Vivien Wang, Cathy Wang, Mir Shahrjerdy, Andreas Fuchs, Kaustuve Bhattacharyya, Karel van der Mast

Proceedings Volume 7140, 71400N (2008) https://doi.org/10.1117/12.807998

KEYWORDS: Overlay metrology, Metrology, Lithography, Semiconducting wafers, Scatterometry, Photomasks, Feedback control, Optical lithography, Scanners

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Proceedings Article | 16 June 2003 Paper

Paper

Wafer alignment with backscatter electron detection

Hans Gijsbertsen, David Nijkerk, Giljam Derksen, Patrick de Jager, Stefan Keij, Maurits van der Schaar

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.484962

KEYWORDS: Optical alignment, Backscatter, Semiconducting wafers, Aluminum, Scanning electron microscopy, Electron beams, Photography, Copper, Optical correlators, Sensors

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Proceedings Article | 2 June 2003 Paper

Paper

Novel diffraction-based spectroscopic method for overlay metrology

Weidong Yang, Roger Lowe-Webb, Silvio Rabello, Jiangtao Hu, Je-Yi Lin, John Heaton, Mircea Dusa, Arie den Boef, Maurits van der Schaar, Adolph Hunter

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.483476

KEYWORDS: Overlay metrology, Diffraction, Diffraction gratings, Semiconducting wafers, Spectroscopy, Optical alignment, Imaging systems, Metrology, Error analysis, Optical design

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Proceedings Article | 16 July 2002 Paper

Paper

Advances in process overlay on 300-mm wafers

Jens Staecker, Stefanie Arendt, Karl Schumacher, Evert Mos, Richard van Haren, Maurits van der Schaar, Remi Edart, Wolfgang Demmerle, Hoite Tolsma

Proceedings Volume 4689, (2002) https://doi.org/10.1117/12.473421

KEYWORDS: Semiconducting wafers, Optical alignment, Metrology, Overlay metrology, Photoresist processing, Oxides, Diffraction, Polishing, Image processing, Sensors

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Overlay budgets are getting tighter within 300 mm volume production and as a consequence the process effects on alignment and off-line metrology becomes more important. In a short loop experiment, with cleared reference marks in each image field, the isolated effect of processing was measured with a sub-nanometer accuracy. The examined processes are Shallow Trench Isolation (STI), Tungsten-Chemical Mechanical Processing (W-CMP) and resist spinning. The alignment measurements were done on an ASML TWINSCANT scanner and the off-line metrology measurements on a KLA Tencor. Mark type and mark position dependency of the process effects are analyzed. The mean plus 3 (sigma) of the maximum overlay after correcting batch average wafer parameters is used as an overlay performance indicator (OPI). 3 (sigma) residuals to the wafer-model are used as an indicator of the noise that is added by the process. The results are in agreement with existing knowledge of process effects on 200 mm wafers. The W-CMP process introduces an additional wafer rotation and scaling that is similar for alignment marks and metrology targets. The effects depend on the mark type; in general they get less severe for higher spatial frequencies. For a 7th order alignment mark, the OPI measured about 12 nm and the added noise about 12 nm. For the examined metrology targets the OPI is about 20 nm with an added noise of about 90 nm. Two different types of alignment marks were tested in the STI process, i.e., zero layer marks and marks that were exposed together with the STI product. The overlay contribution due to processing on both types of alignment marks is very low (smaller than 5 nm OPI) and independent on mark type. Some flyers are observed fot the zero layer marks. The flyers can be explained by the residues of oxide and nitride that is left behind in the spaces of the alignment marks. Resist spinning is examined on single layer resist and resist with an organic Bottom Anti-Reflective Coating (BARC) underneath. Single layer resist showed scaling on unsegmented marks that disappears using higher diffraction orders and/or mark segmentation. Resist with a planarizing BARC caused additional effects on the wafer edge for measurements with the red laser signal. The effects disappear using the green laser of ATHENAT.

Proceedings Article | 22 August 2001 Paper

Paper

Advances in process overlay

Paul Hinnen, Henry Megens, Maurits van der Schaar, Richard van Haren, Evert Mos, Sanjay Lalbahadoersing, Frank Bornebroek, David Laidler

Proceedings Volume 4344, (2001) https://doi.org/10.1117/12.436734

KEYWORDS: Semiconducting wafers, Optical alignment, Copper, Overlay metrology, Metals, Metrology, Silicon, Aluminum, Chemical mechanical planarization, Polishing

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Showing 5 of 18 publications

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