Dr. Maxim S. Gorbunov Profile

Dr. Maxim S. Gorbunov

Deputy Director at SRISA

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Author

Publications (5)

Proceedings Article | 30 December 2016 Paper

Total ionizing dose effects modeling in common-gate tri-gate FinFETs using Verilog-A

Maxim Gorbunov, Gennady Zebrev

Proceedings Volume 10224, 1022416 (2016) https://doi.org/10.1117/12.2266864

KEYWORDS: Transistors, Device simulation, Oxides, CMOS technology, Field effect transistors, Radiation effects, Computer simulations, Nanoelectronics, Silicon

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Proceedings Article | 18 December 2014 Paper

Radiation-induced mismatch enhancement in 65nm CMOS SRAM for space applications

Maxim Gorbunov, Pavel Dolotov, Alexandra Shnaider, Gennady Zebrev, Andrey Antonov, Anatoly Lebedev

Proceedings Volume 9440, 944019 (2014) https://doi.org/10.1117/12.2180610

KEYWORDS: Monte Carlo methods, Ions, Transistors, Oxides, Silicon, X-rays, Information operations, Power supplies, Error analysis, Field programmable gate arrays

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Proceedings Article | 18 May 2010 Paper

Phytoplankton as a fluorescent bioindicator of ecotoxicants in natural waters

T. Gostev, F. Kouzminov, M. Gorbunov, V. Fadeev

Proceedings Volume 7715, 771520 (2010) https://doi.org/10.1117/12.854026

KEYWORDS: Luminescence, Organisms, Inverse problems, Fluorine, Photons, Ions, Molecules, Metals, Absorption, Environmental monitoring

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Proceedings Article | 18 May 2010 Paper

Fluorescent diagnostics of cyanobacteria

Fyodor Kouzminov, Eugeny Maximov, Maxim Gorbunov, Victor Fadeev

Proceedings Volume 7715, 771521 (2010) https://doi.org/10.1117/12.854028

KEYWORDS: Luminescence, Energy transfer, Organisms, Diagnostics, Quenching (fluorescence), Molecules, Absorption, Electron transport, Pulsed laser operation, Fluorescence spectroscopy

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Proceedings Article | 26 February 2010 Paper

Radiation-hardening-by-design with circuit-level modeling of total ionizing dose effects in modern CMOS technologies

M. Gorbunov, G. Zebrev, P. Osipenko

Proceedings Volume 7521, 75211F (2010) https://doi.org/10.1117/12.853580

KEYWORDS: Transistors, Monte Carlo methods, Silicon, Oxides, Device simulation, CMOS technology, Data modeling, Circuit switching, Radiation effects, 3D modeling

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