Prof. Maya P. Mikhailova Profile

Prof. Maya P. Mikhailova

at Ioffe Institute

SPIE Involvement:

Author

Publications (23)

SPIE Journal Paper | 23 November 2016

Microwave radiation absorption and Shubnikov-de Haas oscillations in semimetal InAs/GaSb/AlSb composite quantum wells

Maya Mikhailova, Anatoly Veinger, Igor Kochman, Petr Semenikhin, Karina V. Kalinina, Robert Parfeniev, Vyacheslav Berezovets, Mikhail Safonchik, Alice Hospodková, Jiří Pangrác, Markéta Zíková, Eduard Hulicius

JNP, Vol. 10, Issue 04, 046013, (November 2016) https://doi.org/10.1117/12.10.1117/1.JNP.10.046013

KEYWORDS: Quantum wells, Magnetism, Microwave radiation, Absorption, Indium arsenide, Gallium antimonide, Electrons, Composites, Metalloids, Spectroscopy

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Proceedings Article | 13 February 2016 Paper

Paper

Microwave radiation absorption and Shubnikov: de Haas oscillations in semi-metal InAs/GaSb/AlSb composite quantum wells

Maya Mikhaliova, Anatoly Veinger, Igor Kochman, Petr Semenikhin, Karina Kalinina, Robert Parfeniev, Vyacheslav Berezovets, Alice Hospodková, Jiří Pangrác, Eduard Hulicius

Proceedings Volume 9755, 97552R (2016) https://doi.org/10.1117/12.2208588

KEYWORDS: Quantum wells, Magnetism, Microwave radiation, Indium arsenide, Gallium antimonide, Absorption, Composites, Metalloids, Spectroscopy, Heterojunctions

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Proceedings Article | 6 January 2015 Paper

Paper

High-temperature luminescence in light-emitting heterostructures with a high potential barriers based on GaSb

A. Petukhov, L. Danilov, E. Ivanov, K. Kalinina, M. Mikhailova, G. Zegrya, N. Stoyanov, Yu. Yakovlev

Proceedings Volume 9450, 94501Q (2015) https://doi.org/10.1117/12.2070242

KEYWORDS: Heterojunctions, Electrons, Electroluminescence, Light emitting diodes, Gallium antimonide, Ionization, Temperature metrology, Indium gallium arsenide antimonide, Luminescence, Solids

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Proceedings Article | 6 January 2015 Paper

Paper

Superlinearity and temperature dependence of electroluminescence in heterostructures with deep AlSb/InAs1-x Sbx /AlSb quantum well

Maya Mikhailova, Edward Ivanov, Leonid Danilov, Andrei Petukhov, Karina Kalinina, Nikolai Stoyanov, Yuri Yakovlev, Alice Hospodková, Jiri Pangrác, Jiri Oswald, Marketa Ziková, Edward Hulicius

Proceedings Volume 9450, 94500J (2015) https://doi.org/10.1117/12.2069903

KEYWORDS: Electroluminescence, Quantum wells, Electrons, Temperature metrology, Ionization, Heterojunctions, Nanostructures, Antimony, Nitrogen, Liquids

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Proceedings Article | 7 May 2013 Paper

Paper

Enchancemnt of the optical power stimulated by impact ionization in GaSb-based heterostructures with deep quantum wells

M. Mikhailova, G. Zegrya, L. Danilov, E. Ivanov, K. Kalinina, N. Stoyanov, Kh. Salikhov, Yu. Yakovlev, E. Hulicius, A. Hospodkova, J. Pangrac, M. Zikova

Proceedings Volume 8781, 87810K (2013) https://doi.org/10.1117/12.2017124

KEYWORDS: Quantum wells, Ionization, Electroluminescence, Electrons, Heterojunctions, Interfaces, Mid-IR, Gallium antimonide, Solar energy, Quantum efficiency

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Proceedings Article | 23 January 2010 Paper

Paper

Type II heterostructures with InSb quantum dots inserted into p-n InAs(Sb,P) junction

K. Moiseev, Ya. Parkhomenko, E. Ivanov, S. Kizhaev, M. Mikhailova, V. Nevedomsky, N. Bert, Yu. Yakovlev

Proceedings Volume 7608, 76081R (2010) https://doi.org/10.1117/12.841160

KEYWORDS: Indium arsenide, Heterojunctions, Quantum dots, Electroluminescence, Luminescence, Solids, Liquid phase epitaxy, Interfaces, Binary data, Transmission electron microscopy

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Proceedings Article | 18 May 2009 Paper

Paper

Sensitivity of a receiver using GaInAsSb/AlGaAsSb SAM avalanche photodiode for long-wavelength optical communication systems in the mid-infrared spectral range

M. Mikhailova, I. Andreev, E. Kunitsyna, Yu. Yakovlev

Proceedings Volume 7355, 735511 (2009) https://doi.org/10.1117/12.821004

KEYWORDS: Avalanche photodetectors, Ionization, Receivers, Avalanche photodiodes, Germanium, Telecommunications, Absorption, Mid-IR, Optical communications, Gallium indium arsenide antimonide phosphide

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Proceedings Article | 14 February 2009 Paper

Paper

InSb quantum dots and quantum rings in a narrow-gap InAsSbP matrix

K. Moiseev, M. Mikhailova, Ya. Parkhomenko, E. Gushchina, S. Kizhaev, E. Ivanov, N. Bert, Yu. Yakovlev

Proceedings Volume 7224, 72240B (2009) https://doi.org/10.1117/12.809312

KEYWORDS: Quantum dots, Indium arsenide, Indium arsenide antimonide phosphide, Liquid phase epitaxy, Atomic force microscopy, Electroluminescence, Transmission electron microscopy, Binary data, Interfaces, Temperature metrology

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Proceedings Article | 18 November 2008 Paper

Paper

Photovoltaic detector based on type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructures with a single quantum well for mid-infrared spectral range

M. Mikhailova, I. Andreev, K. Moiseev, E. Ivanov, N. Stoyanov, Yu. Yakovlev, E. Hulicius, A. Hospodková, J. Pangrác, K. Melichar, T. Simecek

Proceedings Volume 7138, 713813 (2008) https://doi.org/10.1117/12.818007

KEYWORDS: Quantum wells, Heterojunctions, Electroluminescence, Photovoltaic detectors, Mid-IR, Interfaces, Quantum efficiency, Palladium, Photodetectors, Heterodyning

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Proceedings Article | 16 May 2007 Paper

Paper

Optoelectronic sensors on GaSb- and InAs- based heterostructures for ecological monitoring and medical diagnostics

Maya Mikhailova, Nikolay Stoyanov, Igor Andreev, Bizhigit Zhurtanov, Sergei Kizhaev, Ekaterina Kunitsyna, Khafiz Salikhov, Yury Yakovlev

Proceedings Volume 6585, 658526 (2007) https://doi.org/10.1117/12.723507

KEYWORDS: Light emitting diodes, Heterojunctions, Methane, Palladium, Absorption, Photodiodes, Sensors, Liquid phase epitaxy, Medical diagnostics, Optical sensors

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Proceedings Article | 26 April 2007 Paper

Paper

High-speed photodiodes for 2.0-4.0 µm spectral range

Yu. Yakovlev, I. Andreev, S. Kizhayev, E. Kunitsyna, M. Mikhailova

Proceedings Volume 6636, 66360D (2007) https://doi.org/10.1117/12.742322

KEYWORDS: Photodiodes, Indium arsenide, Heterojunctions, Liquid phase epitaxy, Gallium antimonide, Telecommunications, Solids, Gallium indium arsenide antimonide phosphide, Picosecond phenomena, PIN photodiodes

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Proceedings Article | 11 June 2003 Paper

Paper

Magnetotransport of 2D-electrons and holes at a type II broken-gap single heterojunction doped with acceptor impurity

Konstantin Moiseev, V. Berezovets, Maya Mikhailova, V. Nizhankovskii, R. Parfeniev, Yury Yakovlev

Proceedings Volume 5023, (2003) https://doi.org/10.1117/12.514547

KEYWORDS: Electrons, Magnetism, Heterojunctions, Zinc, Interfaces, Solids, Metalloids, Liquid phase epitaxy, Doping, Resistance

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Proceedings Article | 11 June 2003 Paper

Paper

Interface luminescence and lassing at a type II single broken-gap heterojunction

Konstantin Moiseev, Maya Mikhailova, Yury Yakovlev, Anthony Krier

Proceedings Volume 5023, (2003) https://doi.org/10.1117/12.514303

KEYWORDS: Heterojunctions, Electroluminescence, Luminescence, Quantum efficiency, Fermium, Interfaces, Laser development, Physics, Indium arsenide, Semiconductor lasers

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Proceedings Article | 22 May 2002 Paper

Paper

Novel hybrid III-V/II-VI mid-infrared laser structures with high asymmetric band offset confinements

Yury Yakovlev, Sergey Ivanov, Konstantin Moiseev, Andrei Monakhov, Victor Solov'ev, Irina Sedova, Yakov Terent'ev, Alexei Toropov, Maya Mikhailova, Boris Meltzer, Petr Kop'ev

Proceedings Volume 4651, (2002) https://doi.org/10.1117/12.467948

KEYWORDS: Heterojunctions, Electroluminescence, Indium arsenide, Interfaces, Semiconductor lasers, Mid-IR, Quantum wells, Laser applications, Luminescence, Cladding

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Proceedings Article | 28 November 2000 Paper

Paper

Fabrication details of GaInAsSb-based photodiode heterostructures

E. Kunitsyna, Igor Andreev, Maya Mikhailova, Ya. Parkhomenko, Yury Yakovlev

Proceedings Volume 4340, (2000) https://doi.org/10.1117/12.407738

KEYWORDS: Solids, Photodiodes, Gallium antimonide, Liquid phase epitaxy, Gallium indium arsenide antimonide phosphide, Heterojunctions, Ytterbium, Lead, Doping, Indium

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Proceedings Article | 18 April 2000 Paper

Paper

High-power mid-infrared lasers based on type-II heterostructures with asymmetric band offset confinement

Yury Yakovlev, Konstantin Moiseev, Maya Mikhailova, Andrei Monakhov, Anastasia Astakhova, Victor Sherstnev

Proceedings Volume 3947, (2000) https://doi.org/10.1117/12.382093

KEYWORDS: Heterojunctions, Liquid phase epitaxy, Mid-IR, Indium arsenide, Pulsed laser operation, Quantum wells, High power lasers, Electrons, Semiconductor lasers, Continuous wave operation

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Proceedings Article | 2 May 1997 Paper

Paper

Suppression of Auger recombination in the diode lasers based on type II InAsSb/InAsSbP and InAs/GaInAsSb heterostructures

Yury Yakovlev, Tamara Danilova, Albert Imenkov, Maya Mikhailova, Konstantin Moiseev, Oleg Ershov, Victor Sherstnev, Georgy Zegrya

Proceedings Volume 3001, (1997) https://doi.org/10.1117/12.273806

KEYWORDS: Heterojunctions, Laser damage threshold, Interfaces, Semiconductor lasers, Electrons, Quantum efficiency, Polarization, Pulsed laser operation, Quantum cascade lasers, Absorption

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Proceedings Article | 9 October 1995 Paper

Paper

Novel portable optical analyzers based on light-emitting diodes and photodiodes in the 2- to 5-um spectral range

Maya Mikhailova, Alexandr Litvak, Igor Andreev, Andrei Popov, Victor Sherstnev, Yury Yakovlev, Vladimir Eremeev, Sergei Molchanov

Proceedings Volume 2504, (1995) https://doi.org/10.1117/12.224085

KEYWORDS: Light emitting diodes, Photodiodes, Palladium, Optoelectronic devices, Sensors, Pollution detection

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Proceedings Article | 24 April 1995 Paper

Paper

Electroluminescence of confined carriers in type II broken-gap p-GaInAsSb/p-InAs single heterojunction

Maya Mikhailova, Georgy Zegrya, Konstantin Moiseev, Ivan Timchenko, Igor Andreev, Yury Yakovlev

Proceedings Volume 2397, (1995) https://doi.org/10.1117/12.206866

KEYWORDS: Heterojunctions, Electroluminescence, Electrons, Interfaces, Quantum wells, Indium arsenide, Semiconductors, Semiconductor lasers, Tunable lasers, Magnetism

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Proceedings Article | 1 April 1992 Paper

Paper

Semiconductor lasers and photodiodes for gas analysis in the spectral range 1.8-2.5 um

Alexej Baranov, Albert Imenkov, Maya Mikhailova, Yury Yakovlev

Proceedings Volume 1724, (1992) https://doi.org/10.1117/12.140316

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Proceedings Article | 1 February 1992 Paper

Paper

Low-noise GaInAsSb/GaAlAsSb SAM avalance photodiode in the 1.6-2.5um spectral range

Maya Mikhailova, Igor Andreev, Alexej Baranov, S. Mel'nikov, Yulia Smorchkova, Yury Yakovlev

Proceedings Volume 1580, (1992) https://doi.org/10.1117/12.135386

KEYWORDS: Avalanche photodetectors, Gallium indium arsenide antimonide phosphide, Receivers, Solids, Ionization, Optical fibers, Absorption, Fiber optic components, Avalanche photodiodes, Glasses

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Proceedings Article | 1 September 1991 Paper

Paper

Optoelectronic LED-photodiode pairs for moisture and gas sensors in the spectral range 1.8-4.8 um

Yury Yakovlev, Alexej Baranov, Albert Imenkov, Maya Mikhailova

Proceedings Volume 1510, (1991) https://doi.org/10.1117/12.47135

KEYWORDS: Light emitting diodes, Photodiodes, Sensors, Gallium indium arsenide antimonide phosphide, Optoelectronics, Gas sensors, Indium arsenide antimonide phosphide, Gases, Diodes, Absorption

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Proceedings Article | 1 March 1991 Paper

Paper

Type-II heterojunctions in GaSb-InAs solid solutions: physics and applications

Maya Mikhailova, Alexej Baranov, Albert Imenkov, Yury Yakovlev

Proceedings Volume 1361, (1991) https://doi.org/10.1117/12.24430

KEYWORDS: Heterojunctions, Solids, Physics, Gallium, Antimony, Gallium antimonide, Interfaces, Electroluminescence, Optoelectronic devices, Photodiodes

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Showing 5 of 23 publications

Conference Committee Involvement (9)

Quantum Sensing and Nano Electronics and Photonics XIX

29 January 2023 | San Francisco, California, United States

Quantum Sensing and Nano Electronics and Photonics XVIII

24 January 2022 | San Francisco, California, United States

Quantum Sensing and Nano Electronics and Photonics XVII

2 February 2020 | San Francisco, California, United States

Quantum Sensing and Nano Electronics and Photonics XVI

3 February 2019 | San Francisco, California, United States

Quantum Sensing and Nano Electronics and Photonics XV

28 January 2018 | San Francisco, California, United States

Showing 5 of 9 Conference Committees

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