A TiO2/PS composite system is prepared by chemical vapor deposition which is a common technique in preparation of nano-materials. We report the measurements of the nonlinear refractive index of the TiO2/PS composite system as measured by the reflection Z-scan technique. The large magnitude of the third-order nonlinear coefficients of the TiO2/PS composite system shows that it is a promising candidate for further material development and possible photonic device applications.
We report the measurements of the nonlinear refractive index of a metal/porous silicon composite system as measured by the reflection Z-scan technique. The composite system is formed by using magnetron sputtering to deposit thin metallic films onto porous silicon anodized on p-type silicon. The experiment results indicate an enhancement over the nonlinear refractive index of the composite system, which suggests an opportunity to form new-type nonlinear-optical media consisting of porous silicon for nonlinear optical applications such as power limiting or optical switching.
Third order nonlinear properties of new composite materials obtained by embedding A new type π-conjugated poly
[2,1,3-benzoselenadiazole-(2,5-didodecyloxy-1,4-phenylene)ethynylene](PPE)in porous silicon are measured in 532nm.
The picoseconds measurements show a significant increase of nonlinear refractive index not only with respect to the
standard optical materials. The reason can be explained as follows, the Π-electron conjugation bond would be expected
to have a significant effect on the ground and excited state dipole moments and electronic transition energies of the
molecule and, consequently, could affect the third-order nonlinear optical property of the molecule. The result shows that
it is a promising candidate for further material development and possible photonic device applications.
Porous silicon has attracted a great deal of attention and research for biochemical sensing applications. In this study, we
report a novel porous silicon based resonant grating filters as an optical sensor platform. A narrow bandwidth in the
reflectance spectrum is shown of this porous silicon grating filters and this resonance dip shift obviously after little
infiltration. This research also played a potential role for the extensive applications in all-silicon biosensor.
Diffuse processes on the p-type single crystal silicon produced the p-n junction. Porous silicon was
prepared by using oxidation etching on the surface of the single crystal with p-n junction. A quantum-sized thin
film of TiO2 was deposited by reactive magnetron sputtering on the p-n junction. The results obtained by the
surface photovoltage spectroscope (SPS) showed that the photovoltage of TiO2/n-Si/p-Si and n-PS/p-PS/Si increase
than the photovoltage of n-Si/p-Si. In 300~600 °C, the photovoltage of TiO2/n-Si/p-Si was enhancing with the rise
of temperature, but the photovoltage of TiO2/n-Si/p-Si was reducing with the rise of temperature in 600~800 °C.
The effects of different ion-implantation in single crystal silicon and porous silicon on the photovoltaic
characteristics are studied, the photovoltage of argon implanted samples and nitrogen implanted samples was
increased a lot beyond the photovoltage of non-implanted samples.
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