Dr. Meimei Z. Tidrow Profile

Dr. Meimei Z. Tidrow

Chief Scientist for FPAs at US Army NVESD

SPIE Involvement:

Conference Program Committee | Author

Publications (48)

Proceedings Article | 14 May 2018 Presentation

III-V infrared focal plane array development in US (Conference Presentation)

Alicia Williams, Meimei Tidrow

Proc. SPIE. 10624, Infrared Technology and Applications XLIV

KEYWORDS: Staring arrays, Infrared detectors, Defense and security, Infrared sensors, Sensors, Infrared radiation, Sensor technology

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Proceedings Article | 21 June 2017 Presentation

VISTA video and overview (Conference Presentation)

Meimei Tidrow, Donald Reago

Proc. SPIE. 10177, Infrared Technology and Applications XLIII

KEYWORDS: Sensors, Video, Night vision, Infrared technology, Current controlled current source

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Proceedings Article | 16 May 2017 Paper

MWIR barrier infrared detectors with greater than 5µm cutoff using bulk InAsSb grown on GaSb substrates

Neil Baril, Alexander Brown, Daniel Zuo, Meimei Tidrow, Dmitri Loubychev, Joel Fastenau, Amy W. Liu, Sumith Bandara

Proc. SPIE. 10177, Infrared Technology and Applications XLIII

KEYWORDS: Infrared detectors, Semiconductors, Mid-IR, Photodetectors, Indium arsenide, Sensors, Diffusion, Doping, Gallium antimonide, Infrared radiation, Aluminum, Infrared photography, Antimony, Superlattices, Binary data, Group III-V semiconductors

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SPIE Journal Paper | 8 June 2012

Radiometric characterization of long-wavelength infrared type II strained layer superlattice focal plane array under low-photon irradiance conditions

John Hubbs, Vaidya Nathan, Meimei Tidrow, Manijeh Razeghi

OE Vol. 51 Issue 6

KEYWORDS: Sensors, Laser sintering, Field effect transistors, Superlattices, Staring arrays, Long wavelength infrared, Readout integrated circuits, Infrared sensors, Quantum efficiency, Gallium antimonide

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SPIE Journal Paper | 1 June 2011

Doping dependence of minority carrier lifetime in long-wave Sb-based type II superlattice infrared detector materials

Sumith Bandara, Patrick Maloney, Neil Baril, Joseph Pellegrino, Meimei Tidrow

OE Vol. 50 Issue 06

KEYWORDS: Doping, Long wavelength infrared, Sensors, Superlattices, Diffusion, Photodiodes, Heterojunctions, Infrared detectors, Mercury cadmium telluride, Quantum efficiency

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Proceedings Article | 21 May 2011 Paper

Update on III-V antimonide-based superlattice FPA development and material characterization

Lucy Zheng, Meimei Tidrow, Sumith Bandara, Leslie Aitcheson, Tiffany Shih

Proc. SPIE. 8012, Infrared Technology and Applications XXXVII

KEYWORDS: Staring arrays, Mercury cadmium telluride, Data modeling, Sensors, Quantum efficiency, Doping, Gallium antimonide, Diodes, Semiconducting wafers, Superlattices

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Much progress has been made in the past 2 years in developing III-V antimonide-based superlattice infrared detectors and focal plane arrays (FPAs). In the area of detector material growth by molecular beam epitaxy, the wafer foundry group, helped by government-trusted entities and other partnering institutions, has leapfrogged many years of R&D effort to become the premier detector wafer supplier. The wafers produced are of high quality as measured by surface morphology, defect density, photoluminescence property, high-resolution X-ray diffraction, and diode current-voltage characteristics. In the area of detector design and FPA processing, the team-consisting of members from government laboratories, academia, and the FPA industry-has made rapid progress in device structure design, detector array etching, passivation, hybridization, and packaging. The progress is reflected in the steady reduction in FPA median darkcurrent density and improvement in median quantum efficiency, as well as reasonably low median noise-equivalent different temperature under 300 K scene background, when compared with the performance from some of the commercially available HgCdTe FPAs. In parallel with the FPA research and development effort, a small amount of funding has been devoted to measuring minority carrier lifetimes and to understanding life-killing defects and mechanisms of superlattice devices. Results of direct time-resolved photoluminescence measurement on superlattice absorbers indicate relatively short lifetimes (on the order of 30 ns) due to Shockley-Read-Hall mechanism. Modeling and curve fitting with diode current-voltage data indicate longer minority carrier lifetimes, although the best fit lifetime values differ greatly, possibly due to the difference in material quality and device structure. Several models or hypotheses have been proposed to explain experimental data. More data are required to validate these models and hypotheses. Further work is also necessary to reconcile the substantially different results from different groups and to truly understand the physics of minority carrier lifetimes, which is necessary to improve the lifetime and realize the theoretical promise of superlattice materials.

Proceedings Article | 4 May 2010 Paper

Developing high-performance III-V superlattice IRFPAs for defense: challenges and solutions

Lucy Zheng, Meimei Tidrow, Leslie Aitcheson, Jerry O'Connor, Steven Brown

Proc. SPIE. 7660, Infrared Technology and Applications XXXVI

KEYWORDS: Staring arrays, Readout integrated circuits, Infrared detectors, Long wavelength infrared, Mercury cadmium telluride, Sensors, Quantum efficiency, Sensor performance, Semiconducting wafers, Superlattices

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The antimonide superlattice infrared detector technology program was established to explore new infrared detector materials and technology. The ultimate goal is to enhance the infrared sensor system capability and meet challenging requirements for many applications. Certain applications require large-format focal plane arrays (FPAs) for a wide field of view. These FPAs must be able to detect infrared signatures at long wavelengths, at low infrared background radiation, and with minimal spatial cross talk. Other applications require medium-format pixel, co-registered, dual-band capability with minimal spectral cross talk. Under the technology program, three leading research groups have focused on device architecture design, high-quality material growth and characterization, detector and detector array processing, hybridization, testing, and modeling. Tremendous progress has been made in the past few years. This is reflected in orders-of-magnitude reduction in detector dark-current density and substantial increase in quantum efficiency, as well as the demonstration of good-quality long-wavelength infrared FPAs. Many technical challenges must be overcome to realize the theoretical promise of superlattice infrared materials. These include further reduction in dark current density, growth of optically thick materials for high quantum efficiency, and elimination of FPA processing-related performance degradation. In addition, challenges in long-term research and development cost, superlattice material availability, FPA chip assembly availability, and industry sustainability are also to be met. A new program was established in 2009 with a scope that is different from the existing technology program. Called Fabrication of Superlattice Infrared FPA (FastFPA), this 4-year program sets its goal to establish U.S. industry capability of producing high-quality superlattice wafers and fabricating advanced FPAs. It uses horizontal integration strategy by leveraging existing III-V industry resources and taking advantage of years of valuable experiences amassed by the HgCdTe FPA industry. By end of the program span, three sets of FPAs will be demonstrated-a small-format long-wave FPA, a large-format long-wave FPA, and a medium-format dual-band FPA at long-wave and mid-wave infrared.

Proceedings Article | 28 August 2009 Paper

III-V infrared research at the Jet Propulsion Laboratory

S. Gunapala, D. Ting, C. Hill, A. Soibel, John Liu, J. Liu, J. Mumolo, S. Keo, J. Nguyen, S. Bandara, M. Tidrow

Proc. SPIE. 7467, Nanophotonics and Macrophotonics for Space Environments III

KEYWORDS: Staring arrays, Infrared detectors, Long wavelength infrared, Mid-IR, Quantum wells, Sensors, Gallium arsenide, Quantum efficiency, Quantum well infrared photodetectors, Absorption

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Proceedings Article | 7 May 2009 Paper

Recent success on SLS FPAs and MDA's new direction for development

Meimei Tidrow, Lucy Zheng, Hank Barcikowski, James Wells, Leslie Aitcheson

Proc. SPIE. 7298, Infrared Technology and Applications XXXV

KEYWORDS: Staring arrays, Defense and security, Long wavelength infrared, Infrared sensors, Mercury cadmium telluride, Quantum efficiency, Gallium antimonide, Infrared materials, Superlattices, Laser sintering

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Proceedings Article | 3 September 2008 Paper

Development of material quality and structural design for high performance Type II InAs/GaSb superlattice photodiodes and focal plane arrays

Manijeh Razeghi, Binh-Minh Nguyen, Darin Hoffman, Pierre-Yves Delaunay, Edward Kwei-wei Huang, Meimei Tidrow, Vaidya Nathan

Proc. SPIE. 7082, Infrared Spaceborne Remote Sensing and Instrumentation XVI

KEYWORDS: Staring arrays, Long wavelength infrared, Infrared imaging, Mid-IR, Sensors, Quantum efficiency, Photodiodes, Gallium antimonide, Infrared radiation, Superlattices

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Proceedings Article | 3 September 2008 Paper

Mid-wave and long-wave infrared dualband megapixel QWIP focal plane array

S. Gunapala, S. Bandara, J. Liu, J. Mumolo, C. Hill, D. Ting, E. Kurth, J. Woolaway, P. LeVan, M. Tidrow

Proc. SPIE. 7082, Infrared Spaceborne Remote Sensing and Instrumentation XVI

KEYWORDS: Staring arrays, Readout integrated circuits, Long wavelength infrared, Mid-IR, Cameras, Sensors, Gallium arsenide, Detector arrays, Infrared radiation, Quantum well infrared photodetectors

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Proceedings Article | 2 May 2008 Paper

Recent advances in LWIR Type – II InAs/GaSb superlattice photodetectors and focal plane arrays at the Center for Quantum Devices

Manijeh Razeghi, Darin Hoffman, Binh-Minh Nguyen, Pierre-Yves Delaunay, Edward Huang, Meimei Tidrow

Proc. SPIE. 6940, Infrared Technology and Applications XXXIV

KEYWORDS: Staring arrays, Long wavelength infrared, Sensors, Diffusion, Quantum efficiency, Gallium antimonide, Diodes, Superlattices, Stereolithography, Absorption

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Proceedings Article | 23 April 2008 Paper

Development of megapixel dual-band QWIP focal plane array

S. Gunapala, S. Bandara, J. Liu, J. Mumolo, C. Hill, D. Ting, E. Kurth, J. Woolaway, P. LeVan, M. Tidrow

Proc. SPIE. 6940, Infrared Technology and Applications XXXIV

KEYWORDS: Staring arrays, Readout integrated circuits, Long wavelength infrared, Mid-IR, Cameras, Sensors, Metals, Gallium arsenide, Detector arrays, Quantum well infrared photodetectors

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Proceedings Article | 1 February 2008

Type II strained layer superlattice: a potential infrared sensor material for space

L. Zheng, M. Tidrow, A. Novello, H. Weichel, S. Vohra

Proc. SPIE. 6900, Quantum Sensing and Nanophotonic Devices V

KEYWORDS: Staring arrays, Infrared detectors, Defense and security, Long wavelength infrared, Infrared sensors, Mercury cadmium telluride, Sensors, Infrared radiation, Missiles, Superlattices

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Proceedings Article | 9 January 2008 Paper

Toward very large format infrared detector arrays

S. Gunapala, S. Bandara, J. Liu, J. Mumolo, C. Hill, D. Ting, E. Kurth, J. Woolaway, P. LeVan, M. Tidrow

Proc. SPIE. 6800, Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV

KEYWORDS: Staring arrays, Readout integrated circuits, Long wavelength infrared, Mid-IR, Cameras, Sensors, Gallium arsenide, Detector arrays, Semiconducting wafers, Quantum well infrared photodetectors

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Proceedings Article | 26 September 2007 Paper

Toward 16 megapixel focal plane arrays

S. Gunapala, S. Bandara, J. Liu, J. Mumolo, C. Hill, D. Ting, E. Kurth, J. Woolaway, P. LeVan, M. Tidrow

Proc. SPIE. 6660, Infrared Systems and Photoelectronic Technology II

KEYWORDS: Staring arrays, Readout integrated circuits, Long wavelength infrared, Mid-IR, Sensors, Gallium arsenide, Detector arrays, Infrared radiation, Semiconducting wafers, Quantum well infrared photodetectors

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Proceedings Article | 14 May 2007 Paper

Toward dualband megapixel QWIP focal plane arrays

S. Gunapala, S. Bandara, J. Liu, J. Mumolo, C. Hill, E. Kurth, J. Woolaway, P. LeVan, M. Tidrow

Proc. SPIE. 6542, Infrared Technology and Applications XXXIII

KEYWORDS: Staring arrays, Readout integrated circuits, Long wavelength infrared, Mid-IR, Cameras, Sensors, Gallium arsenide, Detector arrays, Infrared radiation, Quantum well infrared photodetectors

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Proceedings Article | 17 May 2006 Paper

Development of high performance radiation hardened antireflection coatings for LWIR and multicolor IR focal plane arrays

Ashok Sood, Yash Puri, Latika Becker, Meimei Tidrow, Raymond Balcerak, Gregory Brill, Priyalal Wijewarnasuriya, Nibir Dhar, Paul Boieriu, Chad Fulk, Siva Sivananthan, Joseph Yehoda, Steve Finke

Proc. SPIE. 6206, Infrared Technology and Applications XXXII

KEYWORDS: Staring arrays, Long wavelength infrared, Thin films, Antireflective coatings, Diamond, Silicon, Coating, Silicon films, Ozone, Semiconducting wafers

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Proceedings Article | 28 February 2006 Paper

Performance characteristics of high-purity mid-wave and long-wave infrared type-II InAs/GaSb superlattice infrared photodiodes

Andrew Hood, Manijeh Razeghi, Vaidya Nathan, Meimei Tidrow

Proc. SPIE. 6127, Quantum Sensing and Nanophotonic Devices III

KEYWORDS: Long wavelength infrared, Infrared imaging, Mid-IR, Sensors, Quantum efficiency, Photodiodes, Diodes, Infrared radiation, Infrared photography, Superlattices

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Proceedings Article | 31 October 2005 Paper

Multicolor megapixel QWIP focal plane arrays for remote sensing instruments

S. Gunapala, S. Bandara, J. Liu, C. Hill, S. Rafol, J. Mumolo, J. Trinh, M. Tidrow, P. LeVan

Proc. SPIE. 5983, Remote Sensing for Environmental Monitoring, GIS Applications, and Geology V

KEYWORDS: Staring arrays, Readout integrated circuits, Long wavelength infrared, Mid-IR, Imaging systems, Sensors, Gallium arsenide, Quantum efficiency, Modulation transfer functions, Quantum well infrared photodetectors

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Proceedings Article | 31 May 2005 Paper

High performance Type II InAs/GaSb superlattices for mid, long, and very long wavelength infrared focal plane arrays

M. Razeghi, Y. Wei, A. Gin, A. Hood, V. Yazdanpanah, M. Tidrow, V. Nathan

Proc. SPIE. 5783, Infrared Technology and Applications XXXI

KEYWORDS: Staring arrays, Long wavelength infrared, Mid-IR, Indium arsenide, Sensors, Luminescence, Interfaces, Gallium antimonide, Diodes, Superlattices

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Proceedings Article | 31 May 2005 Paper

1024x1024 pixel MWIR and LWIR QWIP focal plane arrays and 320x256 MWIR:LWIR pixel colocated simultaneous dualband QWIP focal plane arrays

S. Gunapala, S. Bandara, J. Liu, C. Hill, S. Rafol, J. Mumolo, J. Trinh, M. Tidrow, P. LeVan

Proc. SPIE. 5783, Infrared Technology and Applications XXXI

KEYWORDS: Staring arrays, Readout integrated circuits, Long wavelength infrared, Mid-IR, Imaging systems, Cameras, Sensors, Gallium arsenide, Modulation transfer functions, Quantum well infrared photodetectors

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