Dr. Michael M. Crouse Profile

Dr. Michael M. Crouse

Lithography Development Engineer at ASML

SPIE Involvement:

Author

Publications (21)

Proceedings Article | 10 April 2024 Presentation

Presentation

ArFi speckle reduction and impact on local CDU

Will Conley, Stephen Hsu, Michael Crouse, Dylan Martin, Rajasekhar Rao, Natalllia Karlitskaya, Dirk van Leuken, Jan Baselmans, Marieke van Veen, Edwin de Jong, Birgitt Hepp, Rasmus Nielsen, Eric Bakker

Proceedings Volume PC12953, PC129530D (2024) https://doi.org/10.1117/12.3010892

KEYWORDS: Speckle, Pulsed laser operation, Line width roughness, Semiconducting wafers, Laser scanners, Simulations, Red lasers, Modulation, Edge roughness, Data processing

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Proceedings Article | 10 April 2024 Presentation + Paper

Presentation + Paper

Affordable optical proximity correction runtime for EUV curvilinear mask tape-out flow

Ping Digaum, Kazuto Kajiwara, Nobue Kosa, Ming-Chuan Yang, Ezequiel Vidal Russell, Jianhong Qiu, Omar Ndiaye, Nicolas Martin, Hesham Omar, Ehsan Kabiri Rahani, Peigen Cao, Michael Crouse

Proceedings Volume 12954, 129540T (2024) https://doi.org/10.1117/12.3009981

KEYWORDS: Optical proximity correction, Extreme ultraviolet, Shadows, Printing, Source mask optimization, Lithography, Industry, Mask making

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Proceedings Article | 28 April 2023 Presentation + Paper

Presentation + Paper

Physical dose modeling and throughput optimization in EUV computational lithography

Austin Peng, Christopher Kaplan, Jeff Lu, Michael Crouse, Zuanyi Li, Xiaobo Xie, David Rio, Achim Woessner, Alexander Tan, Cuiping Zhang, Xiaoyang Li, Dezheng Sun, Stephen Hsu, Rafael Howell, Joerg Zimmermann

Proceedings Volume 12494, 124940C (2023) https://doi.org/10.1117/12.2657454

KEYWORDS: Source mask optimization, Computational lithography, Nanoimprint lithography, Extreme ultraviolet, Semiconducting wafers, Scanners, Modeling, Reticles, Artificial intelligence, Light sources and illumination

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Proceedings Article | 28 April 2023 Presentation + Paper

Presentation + Paper

A holistic approach to model-based stochastic-aware computational lithography

ChangAn Wang, Yongfa Fan, Mu Feng, Qian Xie, Jazer Wang, Chris Kaplan, Michael Crouse, Xiaoyang Li, Stephen Hsu, Peigen Cao, Yi-Hsing Peng, Stephen Chang, Jun Ye, Youping Zhang, Bin Cheng, Ken Yang, Leiwu Zheng, Jen-Shiang Wang, Austin Peng, Li-Hao Yeh, Cuiping Zhang, Rafael Howell, Alexander Tan, Yiqiong Zhao, Jun Lang, Xiaolong Zhang

Proceedings Volume 12494, 124940B (2023) https://doi.org/10.1117/12.2658508

KEYWORDS: Stochastic processes, Data modeling, Optical proximity correction, Line width roughness, Source mask optimization, Computational lithography, Semiconducting wafers, Modeling, Performance modeling, Photons

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Proceedings Article | 26 May 2022 Presentation + Paper

Presentation + Paper

A novel solution on KrF pixel layer with thick photo resist (PR) by single exposure multi-focal imaging (SE MFI) technique

Zhenhai Yao, Lequn Jin, Yuhua Li, Maoqun Jiang, Fabin Huang, Min Fang, Xichen Sheng, Rongkuo Zhao, Michael Crouse, Chris Kaplan, Dongqing Zhang, Dongxiang Shi, Zhonghua Xu, Chaoqun Guo, Pieter Scheijgrond, Xiaoyang Jason Li, Stephen Hsu, Will Conley, Zhen Tang

Proceedings Volume 12051, 1205109 (2022) https://doi.org/10.1117/12.2616830

KEYWORDS: Semiconducting wafers, Chromatic aberrations, Data modeling, Calibration, Source mask optimization, Photomasks, SRAF, Copper indium disulfide, Optical lithography, Image processing

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Advancing technology nodes in CMOS Image Sensors (CIS) continues to drive a shrinking process to acquire higher resolution and low power consumption as well as more cost-effective production. With the sensor pixel size scaling down, a thicker photoresist (with aspect ratios greater than 10:1) is introduced to block high-energy implants with extremely localized implant profiles. Then double exposures/double focus (DE/DF) is applied to make sure the resist profile and process window is comparable or better. However, this process is a big challenge at high volume manufacturing (HVM) phase because of throughput loss. To recover it due to DE/DF, we invented SE MFI which uses two wavelengths (“colors”) generated by the KrF excimer laser to solve the problem. Due to the chromatic aberrations in the lens, the focal plane shift of different wavelength produces nearly the same result as DE/DF. However, the use of two-wavelengths brings some challenges. The first is the loss of image contrast and the second is the impact of chromatic aberrations across the slit which results in image shift and image asymmetry. In this work, we demonstrated that the use of ASML’s Tachyon KrF MFI source mask optimization (SMO) that can match the MFI SE process to DE/DF process of record (POR). We first used Tachyon Focus-Exposure Modeling plus (FEM+) to calibrate a DE resist model by using DE POR wafer data. Then we converted the DE model to a SE MFI model. At the end, we use the Tachyon MFI-SMO to optimize the SE MFI to match the DE/DF and MFI sidewall profiles through process window conditions at the center slit. We achieved making the MFI and DE/DF sidewall difference significantly smaller than other noises which can be measured on wafer at the center slit. We evaluated the chromatic aberration impact on through slit sidewall profiles also meet the specification. The through slit matching between MFI and DE/DF was further improved by through-slit mask optimization. This is done by inserting asymmetry sub resolution assist features (SRAFs). Tachyon Optical Proximity Correction plus (OPC+) can support full chip mask corrections for full-chip HVM. The above MFI technology including Tachyon optimization capability will be verified by wafer exposure via comparison between MFI and DE wafer results.

Proceedings Article | 26 February 2021 Presentation

Presentation

Full chip computational lithography for KrF multi-focal imaging (MFI) (Conference Presentation)

Will Conley, Vince Vince Plachecki, Stephen Hsu, Michael Crouse, Rongkuo Zhao, John He, Pieter Scheijgrond, Dezheng Sun, Xiaoyang Li, Dongqing Zhang, Ming-Chun Tien, Jun Ye, Rafael Howell, Chen Liu, Xiaolong Zhang, Hai Li, Zuanyi Li, Xiaobo Xie, Jing Su, Yzzer Roman

Proceedings Volume 11613, 116130E (2021) https://doi.org/10.1117/12.2585651

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Proceedings Article | 18 March 2016 Paper

Paper

Application of EUV resolution enhancement techniques (RET) to optimize and extend single exposure bi-directional patterning for 7nm and beyond logic designs

Ryoung-Han Kim, Obert Wood, Michael Crouse, Yulu Chen, Vince Plachecki, Stephen Hsu, Keith Gronlund

Proceedings Volume 9776, 97761R (2016) https://doi.org/10.1117/12.2219177

KEYWORDS: SRAF, Resolution enhancement technologies, Logic, Extreme ultraviolet lithography, Source mask optimization, Optical proximity correction, Line edge roughness, Nanoimprint lithography, Stochastic processes, Semiconducting wafers

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Proceedings Article | 18 March 2015 Paper

Paper

A holistic methodology to drive process window entitlement and its application to 20nm logic

Lalit Shokeen, Ayman Hamouda, Mark Terry, Dan Dechene, Stephen Hsu, Michael Crouse, Pengcheng Li, Keith Gronlund, Gary Zhang

Proceedings Volume 9427, 94270Z (2015) https://doi.org/10.1117/12.2086101

KEYWORDS: Scanners, Optical proximity correction, Source mask optimization, Process modeling, Logic, Photomasks, Semiconducting wafers, Optical lithography, Lithography, Etching

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Proceedings Article | 22 February 2012 Paper

Paper

Lens heating challenges for negative tone develop layers with freeform illumination: a comparative study of experimental vs. simulated results

Scott Halle, Michael Crouse, Aiqin Jiang, Youri van Dommelen, Tim Brunner, Blandine Minghetti, Matt Colburn, Youping Zhang

Proceedings Volume 8326, 832607 (2012) https://doi.org/10.1117/12.916312

KEYWORDS: Reticles, Semiconducting wafers, Source mask optimization, Monochromatic aberrations, Lithography, Calibration, Photomasks, Critical dimension metrology, Device simulation, Overlay metrology

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Proceedings Article | 18 May 2011 Paper

Paper

PN junction fabrication of solar cells and integration with metamaterials

Amarachukwu Enemuo, David Crouse, Michael Crouse

Proceedings Volume 8070, 80700W (2011) https://doi.org/10.1117/12.887124

KEYWORDS: Metamaterials, Semiconducting wafers, Solar cells, Annealing, Metals, Silicon, Resistance, Oxygen, Photoresist materials, Optical fabrication

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Proceedings Article | 23 March 2011 Paper

Paper

Towards manufacturing of advanced logic devices by double-patterning

Chiew-seng Koay, Scott Halle, Steven Holmes, Karen Petrillo, Matthew Colburn, Youri van Dommelen, Aiqin Jiang, Michael Crouse, Shannon Dunn, David Hetzer, Shinichiro Kawakami, Jason Cantone, Lior Huli, Martin Rodgers, Brian Martinick

Proceedings Volume 7973, 79730F (2011) https://doi.org/10.1117/12.879618

KEYWORDS: Semiconducting wafers, Overlay metrology, Optical alignment, Silicon, Scanners, Scanning electron microscopy, Critical dimension metrology, Data modeling, Manufacturing, Double patterning technology

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Proceedings Article | 1 April 2009 Paper

Paper

Engine for characterization of defects, overlay, and critical dimension control for double exposure processes for advanced logic nodes

Steven Holmes, Chiew-Seng Koay, Karen Petrillo, Kuang-Jung Chen, Matthew Colburn, Jason Cantone, Kenichi Ueda, Andrew Metz, Shannon Dunn, Youri van Dommelen, Michael Crouse, Judy Galloway, Emil Schmitt-Weaver, Aiquin Jiang, Robert Routh, Cherry Tang, Mark Slezak, Sumanth Kini, Tony DiBiase

Proceedings Volume 7273, 727305 (2009) https://doi.org/10.1117/12.828483

KEYWORDS: Overlay metrology, Semiconducting wafers, Double patterning technology, Lithography, Semiconductors, Defect inspection, Scanning electron microscopy, Logic, Polymers, Photomasks

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Proceedings Article | 6 March 2009 Paper

Paper

Improved model predictability by machine data in computational lithography and application to laser bandwidth tuning

Stefan Hunsche, Qian Zhao, Xu Xie, Robert Socha, Hua-Yu Liu, Peter Nikolsky, Anthony Ngai, Paul van Adrichem, Michael Crouse, Ivan Lalovic

Proceedings Volume 7274, 727405 (2009) https://doi.org/10.1117/12.814644

KEYWORDS: Data modeling, Scanners, Semiconducting wafers, Calibration, Process modeling, Fiber optic illuminators, Model-based design, Optical proximity correction, Photomasks, Computational lithography

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SPIE Journal Paper | 1 January 2009

Litho-only double patterning approaches: positive–negative versus positive–positive tone

Michael Crouse, Ryusuke Uchida, Youri van Dommelen, Tomoyuki Ando, Emil Schmitt-Weaver, Masaru Takeshita, Shunder Wu, Robert Routh

JM3, Vol. 8, Issue 01, 011006, (January 2009) https://doi.org/10.1117/12.10.1117/1.3042219

KEYWORDS: Double patterning technology, Image processing, Nanoimprint lithography, Critical dimension metrology, Photoresist processing, Printing, Reticles, Cadmium, Lithography, Line width roughness

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Proceedings Article | 26 August 2008 Paper

Paper

Fabrication, characterization of II-VI semiconductor nanowires and applications in infrared focal plane arrays

Michael Crouse, Thomas James, David Crouse

Proceedings Volume 7095, 70950J (2008) https://doi.org/10.1117/12.795399

KEYWORDS: Heterojunctions, Electrodes, Cadmium sulfide, Platinum, Crystals, Group II-VI semiconductors, Staring arrays, Optoelectronic devices, Silicon, Nanowires

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Proceedings Article | 19 May 2008 Paper

Paper

Separable OPC models for computational lithography

Hua-Yu Liu, Qian Zhao, J. Fung Chen, Jiong Jiang, Robert Socha, Eelco Van Setten, Andre Engelen, Jeroen Meessen, Michael Crouse, Mu Feng, Wenjin Shao, Hua Cao, Yu Cao, Lieve Van Look, Joost Bekaert, Geert Vandenberghe, Jo Finders

Proceedings Volume 7028, 70280X (2008) https://doi.org/10.1117/12.793039

KEYWORDS: 3D modeling, Optical proximity correction, Calibration, Photomasks, Data modeling, Semiconducting wafers, Performance modeling, Finite element methods, Lithography, Wafer-level optics

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Proceedings Article | 26 March 2008 Paper

Paper

The use of EUV lithography to produce demonstration devices

Bruno LaFontaine, Yunfei Deng, Ryoung-Han Kim, Harry Levinson, Sarah McGowan, Uzodinma Okoroanyanwu, Rolf Seltmann, Cyrus Tabery, Anna Tchikoulaeva, Tom Wallow, Obert Wood, John Arnold, Don Canaperi, Matthew Colburn, Kurt Kimmel, Chiew-Seng Koay, Erin Mclellan, Dave Medeiros, Satyavolu Papa Rao, Karen Petrillo, Yunpeng Yin, Hiroyuki Mizuno, Sander Bouten, Michael Crouse, Andre van Dijk, Youri van Dommelen, Judy Galloway, Sang-In Han, Bart Kessels, Brian Lee, Sjoerd Lok, Brian Niekrewicz, Bill Pierson, Robert Routh, Emil Schmit-Weaver, Kevin Cummings, James Word

Proceedings Volume 6921, 69210P (2008) https://doi.org/10.1117/12.772933

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Semiconducting wafers, Transistors, Extreme ultraviolet, Optical proximity correction, Photoresist processing, Etching, Metals, Scanners

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Proceedings Article | 18 March 2008 Paper

Paper

Enabling 35nm double patterning contact imaging using a novel CD shrink process

Yoshiaki Yamada, Michael Crouse, Shannon Dunn, Tetsu Kawasaki, Satoru Shimura, Eiichi Nishimura, Yoshitsugu Tanaka, Judy Galloway, Bill Pierson, Robert Routh

Proceedings Volume 6924, 69242D (2008) https://doi.org/10.1117/12.774988

KEYWORDS: Lithography, Double patterning technology, Etching, Critical dimension metrology, Semiconducting wafers, Image processing, Photomasks, Photoresist processing, Silica, Tin

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Proceedings Article | 29 March 2006 Paper

Paper

Silicon containing polymer in applications for 193-nm high-NA lithography processes

Sean Burns, Dirk Pfeiffer, Arpan Mahorowala, Karen Petrillo, Alexandera Clancy, Katherina Babich, David Medeiros, Scott Allen, Steven Holmes, Michael Crouse, Colin Brodsky, Victor Pham, Yi-Hsiung Lin, Kaushal Patel, Naftali Lustig, Allen Gabor, Christopher Sheraw, Phillip Brock, Carl Larson

Proceedings Volume 6153, 61530K (2006) https://doi.org/10.1117/12.657197

KEYWORDS: Silicon, Reflectivity, Etching, Photoresist materials, Polymers, Lithography, Oxides, Silicon films, Reactive ion etching, Optical lithography

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Proceedings Article | 15 March 2006 Paper

Paper

Lithography process optimization using linear superposition of commonly available illumination modes

Michael Crouse, Yasri Yudhistira, Min Ho Lee, Hope Matis

Proceedings Volume 6154, 61541Q (2006) https://doi.org/10.1117/12.657198

KEYWORDS: Lithographic illumination, Composites, Lithography, Superposition, Photomasks, Fiber optic illuminators, Image processing, Diffractive optical elements, Optical components, Printing

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The objective of this work is to demonstrate a simple Linear Superposition approach to creating an optimized illumination scheme from commonly available apertures (e.g. conventional, annular, quadrupole, dipole, etc.) that meet a variety of lithographic process metrics. Previous authors have demonstrated a variety of approaches to optimize the illumination for a given lithographic process. One common example is to use an optimized illumination for a specific pitch range and breaking the exposure into multiple reticles designed to print only nested or isolated features. A second example that has been widely demonstrated is to develop a single custom illuminator, which requires long lead times for delivery and a large capital investment. The true on-wafer performance of this custom illuminator can only be determined post-installation, providing limited ability to verify the simulation work a priori. The linear superposition method described here produces an optimal illumination scheme for a given photolithographic process. The success of this approach is due to the acceptably small nature of the electric field interaction terms between individual illumination modes allowing a multiple-exposure system to model a composite source. Images from optimized sub-components can be added to generate a composite image that is superior overall to any one process alone. After each exposure in a multiple exposure system there is a latent image that is only developable after a specific energy or dose level has been surpassed. It is the additive process of these latent images that creates the composite image. The composite image has the additive properties of the sub-components according to their dose fractions. Once the optimal process and dose split have been determined, it is straightforward to create a composite aperture to produce the same process by a single exposure. The composite aperture is the addition of the multiple sub-components with the relative transmission of each related to the illuminated surface area for systems designed to deliver uniform brightness. This approach produces superior pattern fidelity and an optimized common lithography process without the pitfalls of any one of the sub-component illumination modes.

Proceedings Article | 19 January 2005 Paper

Paper

Design and fabrication of novel II-IV semiconductor quantum wire infrared detectors/sensors

David Crouse, Ataul Ikram, Albert Miller, Michael Crouse

Proceedings Volume 5592, (2005) https://doi.org/10.1117/12.571341

KEYWORDS: Cadmium sulfide, Infrared sensors, Group II-VI semiconductors, Infrared detectors, Nanolithography, Semiconductors, Infrared radiation, Platinum, Aluminum, Nanowires

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Showing 5 of 21 publications

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