Dr. Michael A. Filler Profile

Dr. Michael A. Filler

at Georgia Institute of Technology

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Proceedings Article | 14 March 2018 Presentation

Scalable infrared plasmonics (Conference Presentation)

Michael Filler

Proceedings Volume 10543, 105430H (2018) https://doi.org/10.1117/12.2297707

KEYWORDS: Infrared radiation, Plasmonics, Nanowires, Computer programming, Semiconductors, Thermography, Photons, Thermal engineering, Fabrication, Liquids

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The deep subwavelength confinement of infrared light offers exciting opportunities to manipulate photons, engineer thermal energy transport, and enhance molecular reactivity. Applications leveraging these phenomena will require constituent materials and devices that not only exhibit precisely controlled structural and compositional heterogeneity, but also can be produced at very large scales. Purely top-down fabrication techniques are unlikely to succeed in both regards. The bottom-up vapor-liquid-solid (VLS) mechanism – whereby a liquid seed particle collects precursor molecules from the vapor and directs crystallization of a nanowire – promises the requisite nanoscale programming of structure and composition while simultaneously being amenable to high-throughput manufacturing. This talk will describe our recent efforts to synthesize, understand, and engineer the infrared plasmonic properties of VLS-grown semiconductor nanowires. In particular, I will discuss (i) how programming of dopant profile along the nanowire length enables designer infrared spectral responses, (ii) that combining the dielectric properties of semiconductors and the 1-D geometry of nanowires leads to very strong near-field interactions, and (iii) that these interactions promise the efficient waveguiding of light and heat.

Proceedings Article | 11 September 2013 Paper

Near-field coupling between plasmonic resonators in Si nanowires

Li-Wei Chou, Michael Filler

Proceedings Volume 8809, 88091R (2013) https://doi.org/10.1117/12.2024216

KEYWORDS: Silicon, Resonators, Absorption, Image segmentation, Near field, Plasmonics, Etching, Semiconductors, Surface plasmons, Nanowires

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Nanoscale semiconductors are emerging as promising plasmonic materials for applications in the infrared. Herein, we study the near-field coupling between adjacent plasmonic resonators embedded in Si nanowires with in-situ infrared spectroscopy and discrete dipole approximation calculations. Si nanowires containing multiple phosphorus-doped segments, each with a user-programmable aspect ratio and carrier density, are synthesized via the vapor-liquid- solid technique and support localized surface plasmon resonances (LSPRs) between 5 and 10 μm. Discrete dipole approximation calculations confirm that the observed spectral response results from resonant absorption and free carrier concentrations are on the order of 10²⁰ cm^-3. Near-field coupling occurs between neighboring doped segments and the observed trends agree with plasmon hybridization theory. Our results highlight the utility of vapor-liquid-solid (VLS) synthesis for investigating the basic physics of surface plasmons in nanoscale semiconductors and suggest new opportunities for engineering light absorption in Si.

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