In this study, we demonstrate the potential manufacturing method and application of 2D WSe2-based field-effect transistors (2D-FETs) as a promising biosensor for the selective and rapid detection of a pathogen such as SARS-CoV-2 in vitro. The sensors are manufactured by first synthesizing 2D material on Si/SiO2 substrates, followed by photolithography processes to form the FET devices. Then, the surface of 2D material WSe2 has been functionalized with a specific antibody to selectively detect the SARS-CoV-2 spike protein. The TMDC-based 2D-FETs can potentially serve as sensitive and selective biosensors for the rapid detection of infectious diseases.
In this study, we demonstrate the potential application of 2D monolayer WSe2-based field-effect transistors (2D-FETs) as a promising biosensor for the selective and rapid detection of SARS-CoV-2 in vitro. The sensors are manufactured by first growing the 2D crystals on Si/SiO2 substrates, followed by photolithography processes to form the FET devices. WSe2 crystals are then functionalized with a specific antibody to selectively detect the SARS-CoV-2 spike protein. We demonstrate a detection limit of down to 25 fg/μL in 0.01 PBS. The TMDC-based 2D-FETs can potentially serve as sensitive and selective biosensors for the rapid detection of infectious diseases.
We have investigated the effects of illumination, both broadband and monochromatic, on the electrical performance of organic polymer thin-film transistors (OP-TFTs). In each case, providing the illumination is sufficiently absorbed by the organic polymer, the drain current of a device biased in the OFF-state is significantly increased. We have observed increases in the OFF-state drain current as large as several orders of magnitude depending on the intensity of the incident
illumination. Whereas, the drain current of a device biased in the strong accumulation regime is relatively unaffected by the incident illumination. The illumination also serves to decrease the threshold voltage and increase the subthreshold slope, but has little effect on the field-effect mobility of the charge carriers. We explain these effects in terms of the photo-carrier generation in the channel region of the device due to the incident illumination. We have also studied how our OP-TFTs respond to the turn-on and turn-off of gate bias under illumination and to the turn-on and turn-off of
illumination at certain gate biases.
We present results on the electrical characterization of gate-planarized organic polymer thin-film transistors (OP-TFTs). We investigated the time dependence of the OP-TFT current. Over a relatively short time range (several 100ms), we observed a decrease of the OP-TFT current corresponding to the establishment of the steady-state regime, and is slower when the transistor is in the weak accumulation regime or in the OFF-state. We believe that this is associated with carrier thermalization in the organic semiconductor. Over longer time scales, the decrease of the OP-TFT current is due
to device aging and can be associated with a threshold voltage shift, up to 20V after an electrical stress at VGS=-30V for 30min at room temperature. This shift is fully reversible once the gate polarization is removed and might be associated with charge trapping in the semiconductor.
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