A new Robust Process Window Qualification (PWQ) Technique to perform
systematic defect characterization to enlarge the Lithographic process window is
described, using a Die-to-Database Verification Tool (NGR2100).
With the shrinking of device sizes, the issue of controlling gate critical dimension (CD) is becoming increasingly
important. In particular, the ability to find systematic defects and use that information in the design, optical proximity
correction (OPC), and mask creation phases is becoming critical to improving circuit yield. Current critical dimension
electron scanning microscopes (CD-SEMs) and macro inspection systems, however, fail to address this area in a
practically usable manner - with CD-SEMs limited by their low throughput, and macro inspection systems limited by
their low resolution. The NGR2100 die-to-database verification system introduces high-throughput, wide field of view
(FOV) electron beam scanning technology to allow for mass gate measurement and analysis. Using the collected data
combined with layout data and statistical analysis, the NGR2100 system categorizes and outputs the systematic CD
errors existing on a wafer, which can be fed back to the design, OPC, and mask creation phases for true design-for-manufacturing
(DFM) realization. This paper provides an overview of the NGR2100, the process involved for gate
CD error detection, and presents an actual case in which the NGR2100 was used to collect and analyze data for a
memory device.
The NGR4000 enables high precision verification of mask features, by matching Scanning Electron Microscope (SEM)
images of the mask features to their intended mask design data. The system detects defects in Critical Dimensions
(CDs) and feature placement relative to the large Field of View (FOV). This tool is optimized to determine pattern
fidelity and perform CD measurements with repeatability well ahead of ITRS roadmap requirements. This paper will
show examples and describe the advantages of mass CD measurements, and relative feature placement accuracy as new
technique to define pattern fidelity.
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