Mr. Michael E. Kling Profile

Michael E. Kling

System Engineer

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Publications (10)

Proceedings Article | 3 October 2019 Presentation + Paper

Characterization of EUV image fading induced by overlay corrections using pattern shift response metrology

Daniel Schmidt, Roger Cornell, Michael Kling, Allen Gabor, Christopher Ausschnitt

Proc. SPIE. 11147, International Conference on Extreme Ultraviolet Lithography 2019

KEYWORDS: Reticles, Metrology, Image processing, Scanners, Pellicles, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers, Overlay metrology

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Proceedings Article | 19 March 2018 Presentation + Paper

Holistic analysis of aberration induced overlay error in EUV lithography

Yulu Chen, Lars Liebmann, Lei Sun, Allen Gabor, Shuo Zhao, Feixiang Luo, Obert Wood, Xuemei Chen, Daniel Schmidt, Michael Kling, Francis Goodwin

Proc. SPIE. 10583, Extreme Ultraviolet (EUV) Lithography IX

KEYWORDS: Lithography, Diffraction, Scanners, Error analysis, Wavefronts, Zernike polynomials, Photomasks, Extreme ultraviolet lithography, Aberration theory, Overlay metrology

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Proceedings Article | 27 March 2007 Paper

Patterning control budgets for the 32-nm generation incorporating lithography, design, and RET variations

Kevin Lucas, Chris Cork, Jonathan Cobb, Brian Ward, Martin Drapeau, Charlie Zhang, John Allgair, Mike Kling, Mike Rieger

Proc. SPIE. 6520, Optical Microlithography XX

KEYWORDS: Lithography, Metrology, Optical lithography, Error analysis, Manufacturing, Photomasks, Optical proximity correction, SRAF, OLE for process control, Resolution enhancement technologies

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An important outcome of the 90nm and 65nm device generations was the realization that new methods for predicting and controlling patterning were required to ensure successful transfer for all design rule compliant features through the required process window. This realization led to a strong increase in the use of CD-based and process window aware post-optical proximity correction (OPC) verification in production mask tapeouts. Accurate post-OPC verification is a necessity but many patterning issues could have been detected and removed earlier in the product development lifecycle. Of course, the 45nm and 32nm device generations are only expected to further strain the ability of device manufacturers to predict process control requirements, robust patterning design rules and first-time right reticle enhancement technology (RET) recipes. Therefore, improvements to the traditional process, OPC and design rule prediction/evaluation steps are needed. In this paper we propose a patterning and CD control prediction methodology which incorporates not only the traditional dose, defocus and mask variation parameters but also implements RET parameter variations such as layout edge discretization, model inaccuracy, metrology error and assist feature placement. This methodology allows a more accurate prediction of process control requirements, worst case CD control layout geometries and RET subsystem accuracy/control requirements. Lithography engineers have long operated with specific (if not always fully understood) dose and focus control success requirements. To efficiently determine real worst design situations, we utilize a new methodology for quickly verifying the RET-ability of a lithography process + design rule set + OPC correction recipe based on coupling iterative layout generation with OPC testing. Our aim in this paper is to provide additional engineering rigor to the traditional experience-based OPC success requirements by looking at the total Litho + RET + metrology patterning problem and analyzing the individual component control needs.

Proceedings Article | 14 September 2001 Paper

Effects of complementary phase-shift imaging on gate CD control

Carla Nelson-Thomas, Michael Kling, Matthew Thompson, Ruoping Wang, Nigel Cave, Chong-Cheng Fu

Proc. SPIE. 4346, Optical Microlithography XIV

KEYWORDS: Logic, Optical lithography, Cadmium, Chromium, Optical proximity correction, Critical dimension metrology, Data conversion, Semiconducting wafers, Binary data, Phase shifts

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Proceedings Article | 30 December 1999 Paper

Cost analysis of 4x and 6x 9-in. reticles for future lithography

Lloyd Litt, Michael Kling, Terry Perkinson

Proc. SPIE. 3873, 19th Annual Symposium on Photomask Technology

KEYWORDS: Semiconductors, Lithography, Reticles, Glasses, Scanners, Manufacturing, Photomasks, Semiconductor manufacturing, Optimization (mathematics), Semiconducting wafers

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Proceedings Article | 26 July 1999 Paper

Practicing extension of 248-nm DUV optical lithography using trim-mask PSM

Michael Kling, Nigel Cave, Bradley Falch, Chong-Cheng Fu, Kent Green, Kevin Lucas, Bernard Roman, Alfred Reich, John Sturtevant, Ruiqi Tian, Drew Russell, Linard Karklin, Yao-Ting Wang

Proc. SPIE. 3679, Optical Microlithography XII

KEYWORDS: Reticles, Optical lithography, Deep ultraviolet, Etching, Manufacturing, Photomasks, Optical proximity correction, Optics manufacturing, Binary data, Phase shifts

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Proceedings Article | 26 July 1999 Paper

Characterization of CD control for sub-0.18-um lithographic patterning

John Sturtevant, John Allgair, Chong-Cheng Fu, Kent Green, Robert Hershey, Michael Kling, Lloyd Litt, Kevin Lucas, Bernard Roman, Gary Seligman, Mike Schippers

Proc. SPIE. 3679, Optical Microlithography XII

KEYWORDS: Lithography, Reticles, Metrology, Optical lithography, Deep ultraviolet, Error analysis, Resistance, Reflectivity, Critical dimension metrology, Semiconducting wafers

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Proceedings Article | 29 June 1998 Paper

0.25-um logic manufacturability using practical 2D optical proximity correction

Michael Kling, Kevin Lucas, Alfred Reich, Bernard Roman, Harry Chuang, Percy Gilbert, Warren Grobman, Edward Travis, Paul Tsui, Tam Vuong, Jeff West

Proc. SPIE. 3334, Optical Microlithography XI

KEYWORDS: Reticles, Logic, Lithium, Optical lithography, Calibration, Etching, Metals, Manufacturing, Inspection, Optical proximity correction

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Proceedings Article | 8 June 1998 Paper

Manufacturability of subwavelength features using reticle and substrate enhancements

Martin McCallum, Kevin Lucas, John Maltabes, Michael Kling

Proc. SPIE. 3332, Metrology, Inspection, and Process Control for Microlithography XII

KEYWORDS: Lithography, Reticles, Optical lithography, Deep ultraviolet, Silicon, Manufacturing, Reflectivity, Photoresist materials, Optical proximity correction, Critical dimension metrology

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Proceedings Article | 27 December 1996 Paper

Reticle cleanliness and handling issues in submicron wafer fabrication

Michael Kling

Proc. SPIE. 2884, 16th Annual BACUS Symposium on Photomask Technology and Management

KEYWORDS: Reticles, Contamination, Glasses, Particles, Manufacturing, Pellicles, Photomasks, Optical alignment, Semiconducting wafers, Standards development

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Showing 5 of 10 publications

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