EUV lithography systems are now fully deployed in the high-volume manufacturing of leading edge semiconductor devices. In this paper, we review the performance of ASML’s current generation light sources in the field and preview the next step in EUV source performance for the NXE:3800E system. The NXE:3800E system marks a substantial step forward in scanner productivity, delivering a remarkable increase of (+60 WPH) in throughput, made possible by an increase in EUV source power (to >500W). This significant increase in power was achieved through improvements in the droplet generator, higher power CO2 drive laser, improved collector design, and enhancements in our plasma controls required for higher plasma power. Details of these developments and their impact on system design and performance will be discussed, along with recent high-power performance demonstrations of the overall integrated EUV light source system.
ASML NXE scanners are installed at customer factories and being used in high volume manufacturing (HVM) of leading semiconductor devices. EUV sources have improved performance and availability. In this paper we provide an overview of 13.5nm tin laserproduced-plasma (LPP) extreme-ultraviolet (EUV) sources enabling HVM for the most advanced nodes. Sources at customers operate at ~250 Watt power with high availability. Progress in Collector Lifetime and EUV Source performance is shown. High NA EUVL Scanners are in development for future nodes of device manufacturing, with new requirements for source geometry and few new requirements for source performance. In this paper we additionally discuss our progress on the High NA source towards shipment to the customer later this year. Finally, we provide an update on power scaling at ASMLs research systems including reaching a new 600W milestone for EUV Sources and the next steps towards even higher powers.
Over 50 EUV scanners are installed at customer factories and being used in high volume manufacturing (HVM) of leading semiconductor devices. The latest generation of EUV sources are operating at 250W while meeting all other requirements. Future EUV scanners are projected to require more stable EUV and higher powers >600W to meet throughput requirements.
In this paper, we provide an overview of a the latest advances in the laboratory for tin laser-produced-plasma (LPP) extreme-ultraviolet (EUV) sources at 13.5nm enabling HVM at the N5 node and beyond, highlighting crucial EUV source technology developments needed to meet future requirements for EUV power and stability. This includes the performance of subsystems such as the Collector and the Droplet Generator.
Multiple ASML NXE:3400C scanners are installed at customer factories and being used in high volume manufacturing (HVM) of leading semiconductor devices. The latest generation of NXE:3400C sources has improved performance and availability by implementing a modular vessel concept and an automated tin supply system.
In this paper, we provide an overview of 13.5 nm tin laser-produced-plasma (LPP) extreme-ultraviolet (EUV) sources enabling HVM at the N5 node and beyond. The field performance of sources operating at 250 watts power including the performance of subsystems such as the Collector and the Droplet Generator will be shown. Progress in the development of key technologies for power scaling towards 420W will be described.
In this paper, we provide an overview of state-of-the-art technologies for incoherent laser-produced tin plasma extreme-ultraviolet (EUV) sources at 13.5nm with performance enabling high volume semiconductor manufacturing (HVM). The key elements to development of a stable and reliable source that also meet HVM throughput requirements and the technical challenges for further scaling EUV power to increase productivity are described. Improvements in availability of droplet generation and the performance of critical subsystems that contribute to EUV collection optics lifetime toward the one tera-pulse level, are shown. We describe current research activities and provide a perspective for EUV sources towards the future ASML Scanners.
We provide an overview of laser-produced-plasma (LPP) extreme-ultraviolet (EUV) source performance to enable high volume manufacturing and improvements in various technologies for scaling output power of the source. Several companies have multiple systems and are ramping toward production, we will show current output and availability of sources and describe their readiness for HVM. We will show improvements to source architecture that facilitated the increase of EUV power to 250W, and the technical challenges for power scaling of key source parameters and subsystems. The performance of critical subsystems such as the Droplet Generator and Collector protection will be shown, with emphasis on stability and lifetime. Finally, we will describe current research activities and provide a perspective for LPP EUV sources towards 500W.
In this paper, we provide an overview of various technologies for scaling tin laser-produced-plasma (LPP) extremeultraviolet (EUV) source performance to enable high volume manufacturing (HVM). We will show improvements to source architecture that facilitated the increase of EUV power from 100W to 250W, and the technical challenges for power scaling of key source parameters and subsystems. The performance of critical subsystems such as the Droplet Generator and Collector protection will be shown, with emphasis on stability and lifetime. Finally, we will describe current research activities and provide a perspective for LPP EUV sources towards 500W.
In this paper, we provide an overview of various challenges and their solutions for scaling laser-produced-plasma (LPP) extreme-ultraviolet (EUV) source performance to enable high volume manufacturing. We will discuss improvements to source architecture that facilitated the increase of EUV power from 100W to >200W, and the technical challenges for power scaling of key source parameters and subsystems. Finally, we will describe current power-scaling research activities and provide a forward looking perspective for LPP EUV sources towards 500W.
NXE:3300B scanners have been operational at customer sites since almost two years, and the NXE:3350B, the 4th generation EUV system, has started shipping at the end of 2015. All these exposure tools operate using MOPA pre-pulse source technology, which enabled significant productivity scaling, demonstrated at customers and at ASML. Having achieved the required throughput to support device development, the main priority of the ASML EUV program has shifted towards improving stability and availability. Continuous progresses in defectivity reduction and in the realization of a reticle pellicle are taking place at increased speed. Today’s overlay and imaging results are in line with the requirements of 7nm logic devices; Matched Machine overlay to ArF immersion below 2.5 nm and full wafer CDU performance of less than 1.0nm are regularly achieved. The realization of an intensity loss-less illuminator and improvements in resist formulation are significant progress towards enabling the use of EUV technology for 5nm logic devices at full productivity. This paper will present an overview of the status of the ASML EUV program and product roadmap by reviewing the current performance and on-going developments in productivity, imaging, overlay and mask defectivity reduction.
We present highlights from plasma simulations performed in collaboration with Lawrence Livermore National Labs. This modeling is performed to advance the rate of learning about optimal EUV generation for laser produced plasmas and to provide insights where experimental results are not currently available. The goal is to identify key physical processes necessary for an accurate and predictive model capable of simulating a wide range of conditions. This modeling will help to drive source performance scaling in support of the EUV Lithography roadmap. The model simulates pre-pulse laser interaction with the tin droplet and follows the droplet expansion into the main pulse target zone. Next, the interaction of the expanded droplet with the main laser pulse is simulated. We demonstrate the predictive nature of the code and provide comparison with experimental results.
This paper describes the development and evolution of the critical architecture for a laser-produced-plasma (LPP) extreme-ultraviolet (EUV) source for advanced lithography applications in high volume manufacturing (HVM). In this paper we discuss the most recent results from high power sources in the field and testing on our laboratory based development systems, and describe the requirements and technical challenges related to successful implementation of those technologies on production sources. System performance is shown, focusing on pre-pulse operation with high conversion efficiency (CE) and with dose control to ensure high die yield. Finally, experimental results evaluating technologies for generating stable EUV power output for a high volume manufacturing (HVM) LPP source will be reviewed.
This paper describes the development of a laser-produced-plasma (LPP) extreme-ultraviolet
(EUV) source for advanced lithography applications in high volume manufacturing. EUV
lithography is expected to succeed 193nm immersion double patterning technology for sub-
20nm critical layer patterning. In this paper we discuss the most recent results from high
power testing on our development systems targeted at the 250W configuration, and describe
the requirements and technical challenges related to successful implementation of these
technologies. Subsystem performance will be shown including Conversion Efficiency (CE),
dose control, collector protection and out-of-band (OOB) radiation measurements. This
presentation reviews the experimental results obtained on systems with a focus on the topics
most critical for a 250W HVM LPP source.
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