Mr. Mikolaj Zak Profile

Mikolaj Zak

at Institute of High Pressure Physics

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Publications (5)

Proceedings Article | 9 March 2024 Presentation

Influence of InGaN underlayer on efficiency of LEDs grown by plasma-assisted molecular beam epitaxy

Greg Muziol, Mateusz Hajdel, Marcin Siekacz, Mikolaj Zak, Krzysztof Golyga, Anna Feduniewicz-Zmuda, Henryk Turski, Czeslaw Skierbiszewski

Proceedings Volume PC12886, PC1288619 (2024) https://doi.org/10.1117/12.3002699

KEYWORDS: Light emitting diodes, Indium gallium nitride, Molecular beam epitaxy, Quantum wells, Gallium nitride, Vapor phase epitaxy, Quantum physics, Internal quantum efficiency, Indium

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Proceedings Article | 21 March 2023 Presentation

Properties of implanted InGaN micro-LEDs with tunnel junctions

Julia Slawinska, Greg Muziol, Mikolaj Zak, Anna Kafar, Czeslaw Skierbiszewski

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2650014

KEYWORDS: Light emitting diodes, Indium gallium nitride, Quantum wells, Ion implantation, Gallium nitride, Wafer-level optics, Semiconducting wafers, Molecular beam epitaxy, Laser crystals, Ions

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Proceedings Article | 14 March 2023 Presentation

Tunnel junctions for new architecture of III-N devices (Conference Presentation)

Czeslaw Skierbiszewski, Grzegorz Muzioł, Henryk Turski, Marcin Siekacz, Julia Slawinska, Mikolaj Chlipala, Mikolaj Zak

Proceedings Volume PC12441, PC124410J (2023) https://doi.org/10.1117/12.2649797

KEYWORDS: Light emitting diodes, Hydrogen, Wavelength tuning, Vapor phase epitaxy, Semiconductor lasers, Resistance, Polishing, Plasma, Molecular beam epitaxy, Magnesium

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Proceedings Article | 9 March 2022 Presentation

Next-generation of III-nitride light emitters based on buried tunnel junction design

Henryk Turski, Mikolaj Chlipala, Marcin Siekacz, Grzegorz Muziol, Mikolaj Zak, Mateusz Hajdel, Krzesimir Nowakowski-Szkudlarek, Len van Deurzen, Huili Xing, Debdeep Jena, Czeslaw Skierbiszewski

Proceedings Volume PC12022, PC120220G (2022) https://doi.org/10.1117/12.2608281

KEYWORDS: Solid state electronics, Polarization, Lead, Heterojunctions, Gallium nitride, Electrons

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Proceedings Article | 16 February 2020 Presentation + Paper

Monolithically p-down nitride laser diodes and LEDs obtained by MBE using buried tunnel junction design

Henryk Turski, Shyam Bharadwaj, Marcin Siekacz, Grzegorz Muziol, Mikolaj Chlipala, Mikolaj Zak, Mateusz Hajdel, Krzesimir Nowakowski-Szkudlarek, Szymon Stanczyk, Huili Xing, Debdeep Jena, Czeslaw Skierbiszewski

Proceedings Volume 11280, 1128010 (2020) https://doi.org/10.1117/12.2548996

KEYWORDS: Light emitting diodes, Gallium nitride, Semiconductor lasers, Continuous wave operation, Quantum wells, Indium gallium nitride, Molecular beam epitaxy

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