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Miles J. Gehm
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Publications (1)
Proceedings Article | 1 June 1992 Paper
Evaluation of methods to reduce linewidth variation due to topography for i-line and deep-UV lithography
Miles Gehm, Patrick Jaenen, Veerle Van Driessche, Anne-Marie Goethals, Nandasiri Samarakone, Luc Van den Hove, Bart Denturck
Proceedings Volume 1674, (1992) https://doi.org/10.1117/12.130372
KEYWORDS: Reflectivity, Deep ultraviolet, Refractive index, Semiconducting wafers, Optical lithography, Etching, Phase shifts, Plasma etching, Lithography, Silicon
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