Ga2O3 is one of the hot materials used in the preparation of solar blind ultraviolet detectors in recent years because of its wide band gap of 4.8 eV, high optical absorption coefficient, good thermal and chemical stability, strong anti-irradiation ability and low cost. Among them, amorphous Ga2O3 materials not only have the same photoelectric characteristics as single crystalline Ga2O3 materials, but also have the unique advantages of easy growth, easy preparation and low substrate requirements. The introduction of oxygen vacancy in Ga2O3 can produce intermediate energy level in its forbidden band, so that Ga2O3 has the ability of wide band detection from ultraviolet to visible. However, in photoconductive Ga2O3 photodetectors, there exists a contradictory relationship between responsiveness and response recovery speed, which is mainly attributed to the fact that photoconductive gain and sustained photoconductivity related to defects increase responsiveness and response recovery time, respectively. In addition, the mechanism of photoconductance gain and sustained photoconductance formation needs further clarification. In this paper, amorphous Ga2O3 photodetectors with good performance were prepared and the mechanism of continuous photoconductance in Ga2O3 photodetectors was investigated.
The combination of inorganic semiconductor and organic lead halide perovskite to prepare photodetectors can produce wider spectral response and better photoelectric performance to a certain extent, so it has been widely studied. Here, ZnO thin film was prepared by radio frequency magnetron sputtering, MAPbI3 was prepared by spin coating method, and ZnO/MAPbI3 composite UV-vis photodetector was prepared. ZnO is n-type semiconductor material, MAPbI3 is p-type semiconductor material and ZnO/MAPbI3 heterojunction is formed at the contact interface. Electrons from MAPbI3 diffuse into ZnO and holes from ZnO diffuse into MAPbI3, forming a built-in electric field. The surface of ZnO reacted photodesorption, the width of the depletion zone is reduced, leading to an increase in free carriers. With an operating voltage bias of 3 V, the ZnO/MAPbI3 photodetector represented significantly enhanced spectral reactivity (0.02 A/W). Therefore, our study will provide a reference for combining inorganic substances and perovskite to be used in high-performance photodetectors.
Amorphous gallium oxide (a-Ga2O3) is widely used in solar blind ultraviolet detection because of its suitable band gap, simple preparation process and excellent photoelectric properties. This article prepared high-quality a-Ga2O3 films on sapphire substrates by magnetron sputtering and evaporated Ti electrodes on the surface of the films to complete the preparation of the photodetector. Explored the optical properties of a-Ga2O3 thin films and the photoelectric performance of detectors. The detector exhibits excellent light response characteristics and high photocurrent. This experiment provides an effective reference value for the preparation of a-Ga2O3 thin films and the detection of their detectors in the solar blind band.
With the development of the high-speed information era, dual-band response devices have attracted much attention. In this paper, a Cu2O/TiO2 heterojunction photodetector (PD) prepared by hydrothermal method and electrochemical deposition method is reported, which is simple, low-cost, non-toxic and pollution-free, and has a dual-band spectral response in the ultraviolet and visible ranges, and the responsivities of 0.029 and 0.078 A W-1 are obtained, respectively. This study provides a reference for potential applications of high-performance dual-band PDs.
The detection of ultraviolet signal has attracted more and more attention of researchers. Gallium oxide has attracted much attention because of its particularity. In this paper, the status quo of gallium oxide was investigated, and the working principle of gallium oxide photodetector was introduced in detail. A Ga2O3 MSM UV detector with different parameters was prepared by rf magnetron sputtering and wet etching, and the optimum growth parameters were obtained, which is well prepared for the subsequent research. When the bias voltage is constant, the photoelectric characteristics of the photodetector change with the parameters.
In this paper, a fast recognition system is designed to realize the fast recognition of high speed moving targets through effective analysis of the tail flame spectrum characteristics. The system is mainly composed of tracking imaging for target alignment and spectral analysis for target identification. The discriminating factor recognition algorithm is studied to realize the fast recognition of high-speed targets. The multi-band peak mean and valley mean ratio relations are studied and the effective discriminating interval is set to ensure the fast recognition of high-speed targets. The influence of the target velocity on the acquired spectrum is analyzed and the function relation between tangential velocity and radial velocity which determines the spectral shift is given. The experimental detection was carried out at a range of 0.5/1.0/2.0/4.0 km and a speed of 10-100 m/s on a small number of rocket tail flares. The results show that the larger the attenuation degree is, the larger the spectral amplitude difference is and the smaller the spectral morphology change is. In the same sampling period, the spectral distribution of different velocities showed obvious deviation, but the distribution morphology showed no change. By calculating the range of valley mean and peak mean and the inclusion relation among factors, the high speed target can be recognized effectively
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