Two sets of c-Si solar cells varying in front side phosphorus doped emitters were produced by standard screen
printing technique. The first group of samples 3121 was prepared by combination of standard washing and bath with
and highly dilute HF before diffusion of n+-emitter. The second group of samples 3122 was treated only with standard
washing.
This paper brings the comparison of solar cell conversion efficiency and results from a noise spectroscopy and
microplasma presence. As it was already shown in previous publications [1-3] noise spectral density reflects the quality
of solar cells and thus it represents an alternative advanced cell diagnostic tool. Our results confirm this relationship and
moreover bring the clear evidence for the maximum spectral noise voltage density being related with the emitter
structure. The best results were reached for a group of solar cell with of samples 3122 was treated only with standard
washing.
A non-destructive method of reliability prediction for PN junction microelectronic devices is presented.
Transport and noise characteristic of forward biased semiconductor lasers diodes GaSb based VCSE
(Vertical Cavity Surface Emitting) lasers were prepared by Molecular Beam Epitaxy were measured in order
to evaluate the new MBE technology.
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