Emission and degradation mechanism of polymer light emitting diode (PLED) was investigated by using trap analysis.
The device structure in this study is ITO/PEDOT-PSS/LEP/Ba/Al, where LEP (light emitting polymer) is polyfluorene
type Lumation Green 1300 series supplied from Sumation Co., Ltd. The trap behaviors of virgin and degraded devices
were investigated by using the bipolar devices, the hole only devices and the electron only devices. By analyzing the
results, we successfully clarified depth and density of each trap at the interfaces and bulks of this PLED device. PL aging
behavior and EL aging behavior were also examined for investigating mechanisms. This study shows such novel
information that carrier traps at the PEDOT-PSS/LEP interface play an important role in emission and degradation characteristics.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.