Dr. Mitsuru Funato Profile

Dr. Mitsuru Funato

Associate Professor at Kyoto Univ

SPIE Involvement:

Conference Program Committee | Author

Proceedings Article | 9 March 2024 Presentation

MOVPE of (In)GaN on ScAlMgO4 substrates toward long wavelength optical devices

Mitsuru Funato, Yoshinobu Matsuda, Yoichi Kawakami

Proceedings Volume PC12886, PC1288604 (2024) https://doi.org/10.1117/12.3002185

KEYWORDS: Indium gallium nitride, Optical components, Light emitting diodes, Quantum wells, Internal quantum efficiency, Vapor phase epitaxy, Quantum interfaces, Quantum efficiency, Quantum devices, Quantum control

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Proceedings Article | 21 March 2023 Presentation

Spontaneous and stimulated emission physics of aluminum nitride

Ryota Ishii, Toru Nagashima, Reo Yamamoto, Tatsuya Hitomi, Mitsuru Funato, Yoichi Kawakami

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2647637

KEYWORDS: Aluminum nitride, Physics, Crystals, Cryogenics, Semiconductors, Scattering, Optical properties, Excimer lasers, Epitaxy, Emission spectroscopy

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Proceedings Article | 15 March 2023 Presentation + Paper

ScAlMgO4 as a promising substrate for InGaN-based long wavelength emitters: demonstration of far-red LEDs

Mitsuru Funato, Keita Maehara, Yoshinobu Matsuda, Takuya Ozaki, Yoichi Kawakami

Proceedings Volume 12421, 1242102 (2023) https://doi.org/10.1117/12.2649997

KEYWORDS: Light emitting diodes, Design and modelling, Indium gallium nitride, Gallium nitride, Magnesium, Emission wavelengths, Electroluminescence, Electrical conductivity

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Proceedings Article | 5 March 2022 Presentation

Polar-plane-free faceted InGaN polychromatic emitters with fast carrier recombination processes

Mitsuru Funato, Yoshinobu Matsuda, Yoichi Kawakami

Proceedings Volume PC12001, PC1200111 (2022) https://doi.org/10.1117/12.2608556

KEYWORDS: Quantum wells, Indium gallium nitride, Picosecond phenomena, Light emitting diodes, Vapor phase epitaxy, Time resolved spectroscopy, Spectroscopy, Modulation, Luminescence, Gallium nitride

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Proceedings Article | 5 March 2022 Presentation

Luminescence spectroscopies on 265-nm AlGaN DUV LEDs and AlN films grown on AlN substrates

Ryota Ishii, Mitsuru Funato, Yoichi Kawakami

Proceedings Volume PC12001, PC120010S (2022) https://doi.org/10.1117/12.2608423

KEYWORDS: Aluminum nitride, Light emitting diodes, Deep ultraviolet, Luminescence, External quantum efficiency, Spectroscopy, Internal quantum efficiency, Quantum efficiency, Applied physics, Silicon

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Proceedings Article | 5 March 2021 Presentation

Ultrathin GaN/AlN quantum wells for deep UV emitters

Mitsuru Funato, Yoichi Kawakami

Proceedings Volume 11686, 116860W (2021) https://doi.org/10.1117/12.2577156

KEYWORDS: Quantum wells, Gallium nitride, Deep ultraviolet, Aluminum nitride, Crystals, Vapor phase epitaxy, Ultraviolet radiation, Skin, Sapphire, Optical properties

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Proceedings Article | 5 March 2021 Presentation

Recent progress in deep-ultraviolet scanning near-field optical microscope: a tool visualizing the luminescence properties of Al-rich AlGaN active layers

Ryota Ishii, Mitsuru Funato, Yoichi Kawakami

Proceedings Volume 11686, 116861S (2021) https://doi.org/10.1117/12.2576763

KEYWORDS: Near field scanning optical microscopy, Luminescence, Deep ultraviolet, Visualization, Optical microscopes, Spectroscopy, Quantum efficiency, Photonics, Light emitting diodes, Viruses

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Proceedings Article | 16 February 2017 Paper

Design of Al-rich AlGaN quantum well structures for efficient UV emitters

Mitsuru Funato, Shuhei Ichikawa, Kyosuke Kumamoto, Yoichi Kawakami

Proceedings Volume 10104, 101040I (2017) https://doi.org/10.1117/12.2254797

KEYWORDS: Quantum wells, Ultraviolet radiation, X-ray diffraction, Crystals, Light emitting diodes, Aluminum nitride, Luminescence, Internal quantum efficiency, Gallium, Scanning electron microscopy, Polarization, Picosecond phenomena, Optical properties

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Proceedings Article | 16 February 2017 Presentation + Paper

Plasmonics toward high-efficiency LEDs from the visible to the deep-UV region

K. Okamoto, M. Funato, Y. Kawakami, N. Okada, K. Tadatomo, K. Tamada

Proceedings Volume 10124, 101240R (2017) https://doi.org/10.1117/12.2249589

KEYWORDS: Light emitting diodes, Plasmonics, Deep ultraviolet, Metals, Surface plasmons, Visible radiation, Nanoparticles, Aluminum, Nanostructures, Ultraviolet radiation, Quantum wells, Silver, Interfaces

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Proceedings Article | 15 September 2016 Presentation + Paper

Enhanced radiative recombination probability in AlGaN quantum wires on (0001) vicinal surface

Minehiro Hayakawa, Yuki Hayashi, Shuhei Ichikawa, Mitsuru Funato, Yoichi Kawakami

Proceedings Volume 9926, 99260S (2016) https://doi.org/10.1117/12.2237606

KEYWORDS: Transmission electron microscopy, Quantum wells, Aluminum nitride, Excitons, Gallium, Diffusion, Optical properties, Scanning electron microscopy, Luminescence, Spectroscopy

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Proceedings Article | 26 February 2016 Paper

Approaches to highly efficient UV emitters based on AlGaN quantum wells

Shuhei Ichikawa, Mitsuru Funato, Yoichi Kawakami

Proceedings Volume 9748, 97480U (2016) https://doi.org/10.1117/12.2208779

KEYWORDS: Quantum wells, Crystals, Polarization, Aluminum nitride, Ultraviolet radiation, Deep ultraviolet, Light, Quantum efficiency, Light sources, Aluminum, Gallium, Phonons, Sapphire, Light emitting diodes

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Proceedings Article | 13 March 2015 Paper

Semi/non-polar nitride quantum wells for high-efficient light emitters

Mitsuru Funato, Yoichi Kawakami

Proceedings Volume 9363, 93631T (2015) https://doi.org/10.1117/12.2078873

KEYWORDS: Quantum wells, Aluminum nitride, Excitons, Indium gallium nitride, Optical properties, Gallium nitride, Near field scanning optical microscopy, Polarization, Transmission electron microscopy, Light emitting diodes

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Proceedings Article | 8 March 2014 Paper

Multi-wavelength light emission from three-dimensional AlGaN quantum wells fabricated on facet structures

Ken Kataoka, Masanori Yamaguchi, Kensuke Fukushima, Mitsuru Funato, Yoichi Kawakami

Proceedings Volume 8986, 898627 (2014) https://doi.org/10.1117/12.2037286

KEYWORDS: Quantum wells, Aluminum nitride, Aluminum, Sapphire, Transmission electron microscopy, Scanning electron microscopy, Indium gallium nitride, Gallium nitride, Ultraviolet radiation, Atomic force microscopy

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Proceedings Article | 19 February 2009 Paper

Multi-color light-emitting diodes based on GaN microstructures

M. Funato, Y. Kawakami, Y. Narukawa, T. Mukai

Proceedings Volume 7216, 721624 (2009) https://doi.org/10.1117/12.808641

KEYWORDS: Light emitting diodes, Electroluminescence, Quantum wells, Control systems, Gallium nitride, Solid state lighting, Indium gallium nitride, Polarization, Silica, Quantum efficiency

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Proceedings Article | 8 February 2007 Paper

Investigation and comparison of optical gain spectra of (Al,In)GaN laser diodes emitting in the 375nm to 470 nm spectral range

Ulrich Schwarz, Harald Braun, Kazunobu Kojima, Mitsuru Funato, Yoichi Kawakami, Shinichi Nagahama, Takashi Mukai

Proceedings Volume 6485, 648506 (2007) https://doi.org/10.1117/12.705867

KEYWORDS: Semiconductor lasers, Quantum wells, Indium gallium nitride, Near ultraviolet, Indium, Electrons, Optical simulations, Standards development, Gallium, Data modeling

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Showing 5 of 15 publications

Conference Committee Involvement (9)

Gallium Nitride Materials and Devices XX

25 January 2025 | San Francisco, California, United States

Gallium Nitride Materials and Devices XIX

29 January 2024 | San Francisco, California, United States

Gallium Nitride Materials and Devices XVIII

30 January 2023 | San Francisco, California, United States

Gallium Nitride Materials and Devices XVII

24 January 2022 | San Francisco, California, United States

Gallium Nitride Materials and Devices XVI

6 March 2021 | Online Only, California, United States

Showing 5 of 9 Conference Committees

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