Dr. Mitsuru Funato Profile

Dr. Mitsuru Funato

Associate Professor at Kyoto Univ

SPIE Involvement:

Conference Program Committee | Author

Proceedings Article | 16 February 2017 Presentation + Paper

Plasmonics toward high-efficiency LEDs from the visible to the deep-UV region

K. Okamoto, M. Funato, Y. Kawakami, N. Okada, K. Tadatomo, K. Tamada

Proc. SPIE. 10124, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI

KEYWORDS: Plasmonics, Nanostructures, Visible radiation, Surface plasmons, Quantum wells, Light emitting diodes, Deep ultraviolet, Nanoparticles, Metals, Ultraviolet radiation, Interfaces, Silver, Aluminum

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Proceedings Article | 16 February 2017 Paper

Design of Al-rich AlGaN quantum well structures for efficient UV emitters

Mitsuru Funato, Shuhei Ichikawa, Kyosuke Kumamoto, Yoichi Kawakami

Proc. SPIE. 10104, Gallium Nitride Materials and Devices XII

KEYWORDS: Quantum wells, Light emitting diodes, Polarization, Optical properties, Ultraviolet radiation, Luminescence, Crystals, X-ray diffraction, Scanning electron microscopy, Aluminum nitride, Picosecond phenomena, Gallium, Internal quantum efficiency

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Proceedings Article | 15 September 2016 Presentation + Paper

Enhanced radiative recombination probability in AlGaN quantum wires on (0001) vicinal surface

Minehiro Hayakawa, Yuki Hayashi, Shuhei Ichikawa, Mitsuru Funato, Yoichi Kawakami

Proc. SPIE. 9926, UV and Higher Energy Photonics: From Materials to Applications

KEYWORDS: Quantum wells, Optical properties, Spectroscopy, Luminescence, Diffusion, Scanning electron microscopy, Transmission electron microscopy, Aluminum nitride, Excitons, Gallium

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Proceedings Article | 26 February 2016 Paper

Approaches to highly efficient UV emitters based on AlGaN quantum wells

Shuhei Ichikawa, Mitsuru Funato, Yoichi Kawakami

Proc. SPIE. 9748, Gallium Nitride Materials and Devices XI

KEYWORDS: Light sources, Quantum wells, Light emitting diodes, Deep ultraviolet, Polarization, Ultraviolet radiation, Crystals, Quantum efficiency, Sapphire, Aluminum, Aluminum nitride, Phonons, Gallium, Light

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Proceedings Article | 13 March 2015 Paper

Semi/non-polar nitride quantum wells for high-efficient light emitters

Mitsuru Funato, Yoichi Kawakami

Proc. SPIE. 9363, Gallium Nitride Materials and Devices X

KEYWORDS: Quantum wells, Light emitting diodes, Polarization, Optical properties, Transmission electron microscopy, Gallium nitride, Near field scanning optical microscopy, Aluminum nitride, Excitons, Indium gallium nitride

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Proceedings Article | 8 March 2014 Paper

Multi-wavelength light emission from three-dimensional AlGaN quantum wells fabricated on facet structures

Ken Kataoka, Masanori Yamaguchi, Kensuke Fukushima, Mitsuru Funato, Yoichi Kawakami

Proc. SPIE. 8986, Gallium Nitride Materials and Devices IX

KEYWORDS: Quantum wells, Ultraviolet radiation, Atomic force microscopy, Scanning electron microscopy, Transmission electron microscopy, Gallium nitride, Sapphire, Aluminum, Aluminum nitride, Indium gallium nitride

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Proceedings Article | 19 February 2009 Paper

Multi-color light-emitting diodes based on GaN microstructures

M. Funato, Y. Kawakami, Y. Narukawa, T. Mukai

Proc. SPIE. 7216, Gallium Nitride Materials and Devices IV

KEYWORDS: Quantum wells, Light emitting diodes, Silica, Polarization, Solid state lighting, Quantum efficiency, Control systems, Electroluminescence, Gallium nitride, Indium gallium nitride

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Proceedings Article | 8 February 2007 Paper

Investigation and comparison of optical gain spectra of (Al,In)GaN laser diodes emitting in the 375nm to 470 nm spectral range

Ulrich Schwarz, Harald Braun, Kazunobu Kojima, Mitsuru Funato, Yoichi Kawakami, Shinichi Nagahama, Takashi Mukai

Proc. SPIE. 6485, Novel In-Plane Semiconductor Lasers VI

KEYWORDS: Near ultraviolet, Quantum wells, Data modeling, Electrons, Indium, Semiconductor lasers, Optical simulations, Indium gallium nitride, Gallium, Standards development

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Showing 5 of 8 publications

Conference Committee Involvement (5)

Gallium Nitride Materials and Devices XVI

6 March 2021 | Online Only, California, United States

Gallium Nitride Materials and Devices XV

4 February 2020 | San Francisco, California, United States

Gallium Nitride Materials and Devices XIV

4 February 2019 | San Francisco, California, United States

Gallium Nitride Materials and Devices XIII

29 January 2018 | San Francisco, California, United States

Gallium Nitride Materials and Devices XII

30 January 2017 | San Francisco, California, United States

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