Dr. Mitsuru Sato Profile

Dr. Mitsuru Sato

at TOK

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Author

Publications (11)

Proceedings Article | 30 March 2010 Paper

Negative-tone chemically amplified molecular resist based on novel fullerene derivative for nanolithography

Hiroki Yamamoto, Takahiro Kozawa, Seiichi Tagawa, Tomoyuki Ando, Katsumi Ohmori, Mitsuru Sato, Junichi Onodera

Proceedings Volume 7639, 76390U (2010) https://doi.org/10.1117/12.846391

KEYWORDS: Fullerenes, Etching, Nanolithography, Electron beams, Lithography, Polymers, Reactive ion etching, Ultraviolet radiation, Line edge roughness, Silicon

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Proceedings Article | 26 March 2008 Paper

Chemically amplified molecular resist based on fullerene derivative for nanolithography

Hiroki Yamamoto, Takahiro Kozawa, Seiichi Tagawa, Tomoyuki Ando, Katsumi Ohmori, Mitsuru Sato, Junichi Onodera

Proceedings Volume 6923, 69230N (2008) https://doi.org/10.1117/12.771835

KEYWORDS: Fullerenes, Etching, Electron beams, Silicon, Nanolithography, Ultraviolet radiation, Photoresist processing, Line edge roughness, Polymers, Scanning electron microscopy

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Proceedings Article | 23 March 2007 Paper

Single component chemically-amplified resist based on dehalogenation of polymer

Hiroki Yamamoto, Takahiro Kozawa, Seiichi Tagawa, Katsumi Ohmori, Mitsuru Sato, Hiroji Komano

Proceedings Volume 6519, 65192G (2007) https://doi.org/10.1117/12.711656

KEYWORDS: Polymers, Chemically amplified resists, Photoresist materials, Ionizing radiation, Silicon, Electron beams, Semiconducting wafers, Scanning electron microscopy, Photomicroscopy, Halogens

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Proceedings Article | 29 March 2006 Paper

The reaction mechanism of poly[4-hydroxystyrene-co-4-(1,1,1,3,3,3-hexafluoro-2-hydroxypropyl)-styrene]

Hiroki Yamamoto, Takahiro Kozawa, Kazumasa Okamoto, Seiichi Tagawa, Tomoyuki Ando, Mitsuru Sato, Hiroji Komano

Proceedings Volume 6153, 61533O (2006) https://doi.org/10.1117/12.656262

KEYWORDS: Polymers, Absorption, Electron beams, Ionization, Chemically amplified resists, Ionizing radiation, Picosecond phenomena, Silver, X-rays, Extreme ultraviolet lithography

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Proceedings Article | 24 March 2006 Paper

Tri-layer resists process for fabricating 45-nm L&S patterns by EPL

Fumihiro Koba, Kazuyuki Matsumaro, Eiichi Soda, Tadayoshi Watanabe, Yoshihisa Matsubara, Hiroshi Arimoto, Tasuku Matsumiya, Daisuke Kawana, Naoki Yamashita, Yasushi Fujii, Katsumi Ohmori, Mitsuru Sato, Takahiro Kozawa, Seiichi Tagawa

Proceedings Volume 6151, 615127 (2006) https://doi.org/10.1117/12.655976

KEYWORDS: Photoresist processing, Failure analysis, Etching, Back end of line, Semiconducting wafers, Critical dimension metrology, Electron beam lithography, Lithography, Extreme ultraviolet lithography, Photomasks

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In this study, we have demonstrated a resist process to fabricate sub 45-nm lines and spaces (L&S) patterns (1:1) by using electron projection lithography (EPL) for a back-end-of-line (BEOL) process for 45-nm technology node. As a starting point we tried to fabricate sub 45-nm L&S (1:1) patterns using a conventional EPL single-layer resist process. There, the resolution of the EPL resist patterns turned out to be limited to 70 nm L&S (1:1) with aspect ratio (AR) of 3.3 which was caused by pattern collapse during the drying step in resist develop process. It has been common knowledge that pattern collapse of this type could be prevented by reducing the surface tension of the rinse-liquid and by decreasing the AR of the resist patterns. Therefore, we first applied a surfactant rinse to a single-layer resist process that could control the pattern collapse by its reduced surface tension. In this experiment, we used the ArF resist instead of the EPL resist because the surfactant that we were able to obtain was the one optimized to the ArF resist materials. From the results of ArF resist experiments, it was guessed that it was difficult for the EPL resist to obtain the L&S patterns with AR of 3.5 or more even if we used the surfactant optimized to the EPL resist. And we found that it was considerably difficult to form 45-nm L&S patterns with AR of 5.1 that was our target. Next, we evaluated a EPL tri-layer resist process to prevent pattern collapse by decreasing the AR of the resist patterns. Because in a tri-layer resist process the purpose of the top-layer resist is to transfer pattern to the middle-layer, a thinner top-layer resist was selected. By using the tri-layer resist process we were able to control the resist pattern collapse and thus were successful in achieving 40-nm L/S (1:1) top-layer resist patterns with AR of 2.3. The process also gave us 40-nm L&S (1:1) patterns after low-k film etching. And moreover, using our tri-layer resist process we were able to fabricate a wiring device with Cu/low-k. Although it was our first attempt, the process resulted in a high yield of 70 % for a 60-nm (1:1) wiring device. As a part of our study we conducted failure analysis of the results of our experiment. We found that the failures were located at the edge of the wafer and might originate in the bottom-layer pattern collapse. We thought that the wiring yield could be increased by control the bottom-layer pattern collapse. These findings indicated that our tri-layer resist process had a high applicability for device fabrication in BEOL.

Proceedings Article | 4 May 2005 Paper

Resist development status for immersion lithography

Hiromitsu Tsuji, Masaaki Yoshida, Keita Ishizuka, Tomoyuki Hirano, Kotaro Endo, Mitsuru Sato

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.599485

KEYWORDS: Semiconducting wafers, Immersion lithography, Photoresist processing, Manufacturing, Silicon, Ions, Silicon films, Lithography, Contamination, Scanners

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Proceedings Article | 4 May 2005 Paper

Impregnation of resist with functional molecules using supercritical fluid: a new approach to resist engineering for advanced lithography

Hideo Namatsu, Mitsuru Sato

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.597709

KEYWORDS: Molecules, Etching, Lithography, Ultraviolet radiation, Absorbance, Photoresist processing, Optical lithography, Infrared spectroscopy, Photoemission spectroscopy, Nitrogen

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Proceedings Article | 20 August 2004 Paper

Mask patterning process using the negative tone chemically amplified resist TOK OEBR-CAN024

Mathias Irmscher, Dirk Beyer, Joerg Butschke, Peter Hudek, Corinna Koepernik, Jason Plumhoff, Emmanuel Rausa, Mitsuru Sato, Peter Voehringer

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557686

KEYWORDS: Etching, Opacity, Photoresist processing, Chromium, Scattering, Electron beam lithography, Photomasks, Optical lithography, Calibration, Chemically amplified resists

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Proceedings Article | 28 May 2004 Paper

Deep-UV immersion interferometric lithography

Alex Raub, Andrew Frauenglass, Steven Brueck, Will Conley, Ralph Dammel, Andy Romano, Mitsuru Sato, William Hinsberg

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.536772

KEYWORDS: Liquids, Polymers, Lithography, Water, Coating, Immersion lithography, Interferometry, Picosecond phenomena, Prisms, Refractive index

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Proceedings Article | 30 July 2002 Paper

Integration using KrF and ArF resist materials in a full via firstdual-damascene process scheme with CVD OSG low-k dielectric

Scott Jessen, K. Steiner, Thomas Wolf, William Josephson, S. Lytle, Mitsuru Sato, Chung Lee, Ming Fan

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474632

KEYWORDS: Dielectrics, Lithography, Polymers, Etching, Photoresist processing, Chemical vapor deposition, Optical lithography, Photoresist materials, Semiconductors, Phase transfer function

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Proceedings Article | 25 June 1999 Paper

Resist characteristics with direct-write electron beam and SCALPEL exposure system

Mitsuru Sato, Katsumi Omori, Kiyoshi Ishikawa, Toshimasa Nakayama, Anthony Novembre, Leonidas Ocola

Proceedings Volume 3676, (1999) https://doi.org/10.1117/12.351094

KEYWORDS: Charged-particle lithography, Electron beams, Electron beam lithography, Lithography, Critical dimension metrology, Standards development, Optical lithography, Photoresist materials, Light sources, Semiconducting wafers

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Showing 5 of 11 publications

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