Ion shield plate equipped Microwave-ECR etcher was developed to enable reactive ion vertical etching and isotropic radical etching in one chamber. The radical etching of BCl3 could etch HfO2 (High-k) in the low-pressure region below 0.6 Pa. The addition of SiCl4 to BCl3 improved the selectivity to SiGe. For SiOC (Low-k), NF3/N2 gas chemistry can be used for highly selective etching to SiO2 and SiN. The radical etching of NF3/N2 has low carbon reduction than the reactive ion etching.
Roughness transfer from Litho to Etch has been evaluated. The impact of Line width roughness (LWR) or Line edge
roughness (LER) is getting larger with shrink of semiconductor devices. In this study, the roughness measurement by
using a single frame SEM image was brought in to avoid resist shrinkage, and image enhance technique is used to
compensate low S/N ratio in this one frame image. CD-AFM was used as reference, and LWR measured by CD-AFM
was compared to the results of one frame enhanced image taken by CD-SEM. And roughness spectrum analysis was
used for evaluation of roughness characteristics taken by CD-SEM and CD-AFM, and its transition by resist shrink or by
etching process. It was enabled to observe the resist roughness profile with minimum shrink by using one frame
enhanced image, then roughness transfer between Litho and Etch was evaluated by comparing in exactly the same
position as pre- and post-etch. As a result, it was confirmed that transferred roughness by etching was remaining the peak
and valley profile in resist observed by CD-SEM, but the roughness amplitude was reduced in higher frequency domain.
This result consists with the roughness characteristics comparison from Litho to Etch. This also means roughness
characteristics analysis shows the actual nanoscopic event.
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