Mr. Moïse Sotto Profile

Moïse Sotto

at Toyohashi Univ of Technology

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Publications (2)

Proceedings Article | 10 October 2020 Presentation + Paper

Strain-enhanced Ge epitaxial layer on Si-on-quartz wafer for near-infrared photonic devices

Asahi Degawa, Moïse Sotto, Yasuhiko Ishikawa

Proceedings Volume 11556, 1155603 (2020) https://doi.org/10.1117/12.2575522

KEYWORDS: Germanium, Silicon, Semiconducting wafers, Photonic devices, Photodetectors, Silicon photonics, Energy efficiency, L band, Chemical vapor deposition, Quartz

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Proceedings Article | 18 November 2019 Paper

Si-Ge intermixing induced at mesa sidewalls of Si-capped Ge epitaxial layers on Si for operation wavelength tuning in Ge photonic devices

Yasuhiko Ishikawa, Kazuki Kawashita, Riku Katamawari, Kazuki Ito, Moïse Sotto

Proceedings Volume 11193, 1119309 (2019) https://doi.org/10.1117/12.2537485

KEYWORDS: Germanium, Silicon, Wavelength tuning, Photonic devices, Photodetectors, Silicon photonics, Energy efficiency, Modulators, Chemical vapor deposition, Semiconducting wafers

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