Dr. Muhammad Jamil Profile

Dr. Muhammad Jamil

Founder at Thermal Eyez LLC

SPIE Involvement:

Author

Publications (14)

Proceedings Article | 8 March 2014 Paper

High-power pseudomorphic mid-ultraviolet light-emitting diodes with improved efficiency and lifetime

Craig Moe, James Grandusky, Jianfeng Chen, Ken Kitamura, Mark Mendrick, Muhammad Jamil, Masato Toita, Shawn Gibb, Leo Schowalter

Proceedings Volume 8986, 89861V (2014) https://doi.org/10.1117/12.2037856

KEYWORDS: Light emitting diodes, Aluminum nitride, Absorption, Reliability, Crystals, Lead, Ultraviolet radiation, Lamps, Gallium nitride, Analytical research

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SPIE Journal Paper | 6 April 2012 Open Access

Publisher's Note: Growth and characterization of In_xGa₁−xN alloys by metalorganic chemical vapor deposition for solar cell applications

Yong Huang, Jae-Hyun Ryou, Russell Dupuis, Andrew Melton, Muhammad Jamil, Ian Ferguson, Balakrishnam Jampana

JPE, Vol. 2, Issue 1, 020101, (April 2012) https://doi.org/10.1117/12.10.1117/1.JPE.2.020101

KEYWORDS: Metalorganic chemical vapor deposition, Solar cells, Gallium, Computer engineering, Materials science, Indium, Compound semiconductors, Data processing

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Proceedings Article | 21 August 2010 Paper

What would Edison do with solid state lighting?

Ian Ferguson, Andrew Melton, Tianming Xu, Muhammad Jamil, Will Fenwick

Proceedings Volume 7784, 77840A (2010) https://doi.org/10.1117/12.863800

KEYWORDS: Gallium nitride, Solid state lighting, Silicon, Light emitting diodes, Zinc oxide, Sapphire, Light sources, Light sources and illumination, Crystals, Metalorganic chemical vapor deposition

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Proceedings Article | 18 August 2010 Paper

Reactor pressure: growth temperature relation for InN epilayers grown by high-pressure CVD

M. Buegler, S. Gamage, R. Atalay, J. Wang, I. Senevirathna, R. Kirste, T. Xu, M. Jamil, I. Ferguson, J. Tweedie, R. Collazo, A. Hoffmann, Z. Sitar, N. Dietz

Proceedings Volume 7784, 77840F (2010) https://doi.org/10.1117/12.860952

KEYWORDS: Indium nitride, Chemical vapor deposition, Raman spectroscopy, Crystals, Infrared spectroscopy, Indium, Heterojunctions, Gallium nitride, Nitrogen, Sapphire

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Proceedings Article | 18 August 2010 Paper

Free-standing GaN-based LEDs with ALD-Al2O3/Si substrate removed by wet etching

Muhammad Jamil, Tianming Xu, Andrew Melton, Balakrishnam Jampana, Tahir Zaidi, Sheng Liu, Ian Ferguson

Proceedings Volume 7784, 77840E (2010) https://doi.org/10.1117/12.863785

KEYWORDS: Light emitting diodes, Silicon, Gallium nitride, Wet etching, Thin films, Electroluminescence, Sapphire, Metalorganic chemical vapor deposition, Etching, Epoxies

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Proceedings Article | 21 August 2009 Paper

Minimizing shadow losses in III-nitride solar cells

Andrew Melton, Balakrishnam Jampana, Robert Opila, Christiana Honsberg, Muhammad Jamil, Ian Ferguson

Proceedings Volume 7409, 740916 (2009) https://doi.org/10.1117/12.829264

KEYWORDS: Solar cells, Indium gallium nitride, Gallium nitride, Absorption, Tandem solar cells, Sapphire, Polishing, Indium, Metalorganic chemical vapor deposition, Scattering

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Proceedings Article | 18 August 2009 Paper

III-nitride epilayers on ZnO Substrates by MOCVD using Al2O3 as a transition layer

Nola Li, Will Fenwick, Andrew Melton, I-Hsiang Hung, Zhe Chuan Feng, Christopher Summers, Muhammad Jamil, Ian Ferguson

Proceedings Volume 7422, 74220J (2009) https://doi.org/10.1117/12.829482

KEYWORDS: Zinc oxide, Indium gallium nitride, Light emitting diodes, Gallium nitride, Metalorganic chemical vapor deposition, Sapphire, Zinc, Atomic layer deposition, Indium, Diffusion

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Proceedings Article | 18 August 2009 Paper

Optical and structural properties of InN grown by HPCVD

M. Buegler, M. Alevli, R. Atalay, G. Durkaya, I. Senevirathna, M. Jamil, I. Ferguson, N. Dietz

Proceedings Volume 7422, 742218 (2009) https://doi.org/10.1117/12.828163

KEYWORDS: Indium nitride, Raman spectroscopy, Crystals, Sapphire, Chemical vapor deposition, Luminescence, Sensors, Gallium nitride, X-ray diffraction, Chemical analysis

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Proceedings Article | 18 August 2009 Paper

MOCVD growth of GaN on Si substrates using an ALD-grown Al2O3 interlayer

William Fenwick, Andrew Melton, Nola Li, Tianming Xu, Christopher Summers, Muhammad Jamil, Ian Ferguson

Proceedings Volume 7422, 74220P (2009) https://doi.org/10.1117/12.828462

KEYWORDS: Gallium nitride, Silicon, Sapphire, Light emitting diodes, Metalorganic chemical vapor deposition, Patterned sapphire substrate, Atomic layer deposition, Corundum, Raman spectroscopy, Aluminum nitride

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Proceedings Article | 19 February 2009 Paper

Characteristics of narrow-bandgap InN semiconductors grown on Ga-polar and N-polar GaN templates by pulsed metalorganic vapor phase epitaxy

Hongping Zhao, Hua Tong, Alexandra Driscoll, Muhammad Jamil, G. S. Huang, Nelson Tansu

Proceedings Volume 7216, 72160L (2009) https://doi.org/10.1117/12.808695

KEYWORDS: Indium nitride, Gallium nitride, Luminescence, Semiconductors, Vapor phase epitaxy, Temperature metrology, Doping, Sapphire, Crystals, Etching

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Proceedings Article | 3 February 2009 Paper

Development of new substrate technologies for GaN LEDs: atomic layer deposition transition layers on silicon and ZnO

W. E. Fenwick, N. Li, M. Jamil, T. Xu, A. Melton, S. Wang, H. Yu, A. Valencia, J. Nause, C. Summers, I. T. Ferguson

Proceedings Volume 7231, 723119 (2009) https://doi.org/10.1117/12.815324

KEYWORDS: Gallium nitride, Zinc oxide, Silicon, Annealing, Corundum, Crystals, Light emitting diodes, Atomic layer deposition, Metalorganic chemical vapor deposition, Scanning electron microscopy

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Proceedings Article | 15 September 2005 Paper

Deep green emission at 570nm from InGaN/GaN MQW active region grown on bulk AlN substrate

F. Shahedipour-Sandvik, J. Grandusky, M. Jamil, V. Jindal, S. Schujman, L. Schowalter, R. Liu, F. Ponce, M. Cheung, A. Cartwright

Proceedings Volume 5941, 594107 (2005) https://doi.org/10.1117/12.617829

KEYWORDS: Aluminum nitride, Indium gallium nitride, Sapphire, Luminescence, Transmission electron microscopy, Gallium nitride, Diffraction, Crystals, Quantum wells, Optical spectroscopy

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Proceedings Article | 14 September 2005 Paper

Development of low dislocation and strain reduced GaN on Si(111) by substrate engineering

M. Jamil, J. Grandusky, V. Jindal, F. Shahedipour-Sandvik, S. Guha, M. Arif

Proceedings Volume 5941, 59411E (2005) https://doi.org/10.1117/12.617704

KEYWORDS: Gallium nitride, Silicon, Aluminum nitride, Ions, Raman spectroscopy, Luminescence, Annealing, Silicon carbide, Interfaces, Optoelectronic devices

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Proceedings Article | 14 September 2005 Paper

Important interaction effects in the growth of InGaN violet light emitting diodes by MOCVD

J. Grandusky, M. Jamil, V. Jindal, J. DeLuca, S. LeBoeuf, X. Cao, S. Arthur, F. Shahedipour-Sandvik

Proceedings Volume 5941, 59410W (2005) https://doi.org/10.1117/12.617658

KEYWORDS: Light emitting diodes, Electroluminescence, Magnesium, Gallium, Doping, Gallium nitride, Diffractive optical elements, Metalorganic chemical vapor deposition, Silicon, Indium gallium nitride

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Showing 5 of 14 publications

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