(Ga0.3In0.7)2Se3 films were deposited by the thermal evaporation technique. As-deposited (Ga0.3In0.7)2Se3 films were irradiated using wideband radiation of Cu-anode X-ray tube at different exposure times. The spectral dependences of refractive index and extinction coefficient were measured by the spectral ellipsometry technique. The optical transmission spectra of X-ray irradiated (Ga0.3In0.7)2Se3 films were studied depending on irradiation time. Parameters of Urbach absorption edge for X-ray irradiated (Ga0.3In0.7)2Se3 thin films were determined and compared with nonirradiated film. The spectral dependences of refractive indices of non-irradiated and X-ray irradiated (Ga0.3In0.7)2Se3 films are described in the framework of Wemple and DiDomenico model. TThe variation of the parameters of Wemple
and DiDomenico model for non-irradiated and X-ray irradiated (Ga0.3In0.7)2Se3 films was discussed.
(Cu1-хAgx)7GeS(Se)5I mixed crystals were grown by vertical zone crystallization method, they are shown to crystallize in cubic structure ( F43m space group, Z=4). Refractive indices for (Cu1-xAgx)7GeS(Se)5I mixed crystals were obtained from the spectral ellipsometry measurements. Two anomalies of refractive index in the spectrum region from 300 nm to 1000 nm are observed. One of them corresponds to the band-to-band optical transition while another one to the interband Van Hove-Phillips singularity. The dispersion dependences of refractive indices for (Cu1-хAgx)7GeS(Se)5I mixed crystals in the transparency region is well described by Wemple and DiDomenico model. The influence of the cation Cu→Ag substitution and anion S→Se substitution on the optical parameters of (Cu1-хAgx)7GeS(Se)5I mixed crystals has been investigated.
Synthesis of (Ag2S)x(As2S3)1-x superionic glasses for x<0.2 are carried out. The spectrometric studies of optical absorption edge in (Ag2S)x(As2S3)1-x glasses are performed in the temperature range 77-390 K. Optical absorption edge of (Ag2S)x(As2S3)1-x glasses with addition of Ag2S is strongly smeared and has an exponential shape.The influence of temperature and composition on the absorption edge behavior, parameters of optical absorption edge and electronphonon interaction as well as ordering-disordering processes in (Ag2S)x(As2S3)1-x superionic glasses are studied.
(Ga0.4In0.6)2Se3 thin films were deposited by thermal evaporation technique. Refractive index and extinction coefficient dispersions were obtained from the spectral ellipsometry measurements. The dispersion of refractive index is described in the framework of Wemple-DiDomenico model. The energy pseudogap and Urbach energy were determined from the optical absorption spectrum of (Ga0.4In0.6)2Se3 thin film. Optical parameters of (Ga0.4In0.6)2Se3 thin film and single crystal were compared.
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