We report a strong direct correlation (above 0.9) between conventional transistor-level parametrics typically used in the industry to monitor and control intra-die variability (IDV) and a novel, non-contact performance-based metrology (PBM), technology that was integrated into an active die on a 32nm SOI advanced logic product platform. We demonstrate a PBM test structure measurement repeatability of less than 0.4%. In this work, we also demonstrate the compatibility of integrating the PBM technology into an advanced CMOS process flow with no added processing or steps, as well as its footprint scalability. The data suggests that the non-contact PBM technology meets all prerequisites for its deployment as a standard, within-product IDV monitor.
KEYWORDS: Semiconducting wafers, Critical dimension metrology, Metrology, Optical lithography, Signal detection, Process control, Manufacturing, Oscillators, Reticles, Control systems
We report on a performance-based measurement (PBM) technique from a volume production 65-nm multi-product wafer
(MPW) process that shows far more sensitivity than the standard physical gate-length (CD) measurements. The
performance (the electrical "effective" gate length, Leff) variation results measured by PBM can NOT be explained alone
by CD (physical gate) measurement and show that the non-destructive (non-contact) PBM is able to monitor and control
at first-level of electrical connectivity (≥ M1), the bin-yield determining in-die variation that are NOT captured or
realized by physical CD measurement. Along with this higher sensitivity, we also show that the process-induced
variation (excursion) has a distinct signature versus "nominal" expected behavior.
We report on the first non-contact, non-destructive performance measurements of embedded Ring Oscillators. Measurements are made on inside the die active area as early as Metal 1. A 90nm logic CMOS technology was used for this work. We have measured residual across-field performance process noise, and variation separate from and of opposite sense to wafer uniformity. This effect cannot be extrapolated from scribe measurements.
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