Dr. Nancy M. Haegel Profile

Dr. Nancy M. Haegel

Center Director, Materials Science at National Renewable Energy Lab

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Author

Publications (12)

Proceedings Article | 22 May 2009 Paper

Transport imaging with near-field scanning optical microscopy

Lee Baird, Nancy Haegel, Chun-Hong Low, Goon-Hwee Ang

Proceedings Volume 7378, 73782B (2009) https://doi.org/10.1117/12.824114

KEYWORDS: Near field scanning optical microscopy, Diffusion, Luminescence, Scanning electron microscopy, Electron beams, Near field optics, Radiation effects, Gallium nitride, Optical microscopes, Nanowires

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Proceedings Article | 26 September 2007 Paper

Transients in stressed Ge:Ga photoconductors under high background for PACS

Nancy Haegel, Stephan Birkmann, Ulrich Grözinger, Jutta Stegmaier, Oliver Krause, Dietrich Lemke

Proceedings Volume 6678, 667808 (2007) https://doi.org/10.1117/12.734354

KEYWORDS: Sensors, Picture Archiving and Communication System, Photoresistors, Infrared radiation, Signal detection, Infrared sensors, Calibration, Crystals, Mirrors, Spectrometers

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Proceedings Article | 6 July 2006 Paper

Development of a GaAs-based BIB detector for sub-mm wavelengths

J. Beeman, B. Cardozo, R. Katterloher, G. Jakob, N. Haegel, E. Haller, L. Reichertz

Proceedings Volume 6275, 62751S (2006) https://doi.org/10.1117/12.673039

KEYWORDS: Gallium arsenide, Sensors, Doping, Photoresistors, Absorption, Semiconducting wafers, Detector development, Germanium, Multilayers, Interfaces

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Proceedings Article | 29 August 2005 Paper

First results on GaAs blocked impurity band (BIB) structures for far-infrared detector arrays

S. Tschanz, R. Katterloher, J. Beeman, E. Haller, D. Larsen, G. Jakob, L. Reichertz, B. Cardozo, N. Haegel

Proceedings Volume 5883, 58830Q (2005) https://doi.org/10.1117/12.620156

KEYWORDS: Gallium arsenide, Doping, Sensors, Photoresistors, Liquid phase epitaxy, Detector arrays, Absorption, Sulfur, Carbon, Far infrared

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Proceedings Article | 29 August 2005 Paper

Modeling the alternate bias configuration and low temperature C-V profiling in blocked impurity band detectors

J. Garcia, S. Tschanz, N. Haegel

Proceedings Volume 5883, 58830R (2005) https://doi.org/10.1117/12.623471

KEYWORDS: Doping, Interfaces, Profiling, Sensors, Capacitance, Gallium arsenide, Temperature metrology, Germanium, Instrument modeling, Silicon

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Proceedings Article | 4 November 2004 Paper

GaAs BIB photodetector development for far-infrared astronomy

Benjamin Cardozo, Jeffrey Beeman, Lothar Reichertz, Nancy Haegel, Reinhard Katterloher, Eugene Haller, Gerd Jakob

Proceedings Volume 5543, (2004) https://doi.org/10.1117/12.560291

KEYWORDS: Gallium arsenide, Sensors, Doping, Absorption, Liquid phase epitaxy, Photoresistors, Astronomy, Silicon, Detector arrays, Germanium

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Proceedings Article | 1 July 2003 Paper

BIB detector development for the far infrared: from Ge to GaAs

Nancy Haegel

Proceedings Volume 4999, (2003) https://doi.org/10.1117/12.479623

KEYWORDS: Doping, Sensors, Interfaces, Gallium arsenide, Photoresistors, Germanium, Silicon, Absorption, Far infrared, Infrared sensors

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Proceedings Article | 17 February 2003 Paper

Far-infrared photoconductor arrays for Herschel and SOFIA

Alfred Krabbe, Albrecht Poglitsch, Hilmar Richter, Rainer Hoenle, Jeffrey Beeman, Ulrich Groezinger, Nancy Haegel, Eugene Haller, Reinhard Katterloher

Proceedings Volume 4855, (2003) https://doi.org/10.1117/12.459184

KEYWORDS: Sensors, Gallium arsenide, Liquid phase epitaxy, Picture Archiving and Communication System, Photoresistors, Detector arrays, Quantum efficiency, Doping, Spectroscopy, Electronics

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Proceedings Article | 8 February 2002 Paper

Liquid phase epitaxy centrifuge for growth of ultrapure gallium arsenide for far-infrared photoconductors

Gerd Jakob, Alfred Krabbe, Jeffrey Beeman, Mitsuharu Konuma, S. Samperi, Reinhard Katterloher, Nancy Haegel, Eugene Haller

Proceedings Volume 4486, (2002) https://doi.org/10.1117/12.455132

KEYWORDS: Gallium arsenide, Liquid phase epitaxy, Sensors, Doping, Gallium, Infrared sensors, Photoresistors, Silicon, Absorption, Far infrared

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Proceedings Article | 13 November 1998 Paper

Numerical modeling of far-infrared detectors: behavior of conventional and blocked impurity band photoconductors

J. Simoes, Nancy Haegel, James Jacobs, A. White

Proceedings Volume 3465, (1998) https://doi.org/10.1117/12.331163

KEYWORDS: Sensors, Photoresistors, Doping, Information operations, Germanium, Numerical modeling, Instrument modeling, Performance modeling, Gallium arsenide, Silicon

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Proceedings Article | 21 August 1998 Paper

4x32 FIRGA array: a pacesetter for a 52x32-element gallium arsenide focal plane array

Erwin Czech, Nancy Haegel, Goeran Pilbratt, Gerd Jakob, Lothar Barl, Lou Hermans, Jeffrey Beeman, Otto Frenzl, Mitsuharu Konuma, Eugene Haller, Reinhard Katterloher, Thomas Henning, Detlef Engemann

Proceedings Volume 3354, (1998) https://doi.org/10.1117/12.317301

KEYWORDS: Sensors, Gallium arsenide, Infrared sensors, Cryogenics, Electronics, Photoresistors, Liquid phase epitaxy, Interfaces, Doping, Far infrared

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Proceedings Article | 18 August 1992 Paper

CdS-doped ormosils as nonlinear optical materials

Edward Knobbe, Roger Reeves, John Mackenzie, Cindy Porter, Matthew Wilson, Nancy Haegel, Chia-Yen Li

Proceedings Volume 1692, (1992) https://doi.org/10.1117/12.138064

KEYWORDS: Cadmium sulfide, Particles, Absorption, Semiconductors, Microcrystalline materials, Quantum dots, Luminescence, Sol-gels, Matrices, Waveguides

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Showing 5 of 12 publications

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