The mask 3D effect of the EUV mask is key to implementing a high NA scanner process. This is attributed not only to the absorber but also to the multilayer films. Mo/Si multilayers are widely used for EUV masks. However, it may not have sufficient properties in terms of mask 3D effect. We have developed an alternative multilayer toward application to the high NA system.
There are various factors that mask blanks affect wafer productivity. In this report, we evaluated durability performances. These evaluation results on the alternative multilayer will be presented and the next action will be discussed for future production.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.