Mr. Naoya Sohara Profile

Naoya Sohara

at Ushio Inc

SPIE Involvement:

Author

Publications (2)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

SPIE Journal Paper | 9 February 2024

Development of panel-level organic lithography equipment for advanced packaging

Naoya Sohara, Yu Abe, Sho Yamauchi, Ryotaro Takahashi, Hirosuke Takamatsu

JM3, Vol. 23, Issue 01, 011005, (February 2024) https://doi.org/10.1117/12.10.1117/1.JMM.23.1.011005

KEYWORDS: Lithography, Copper, Overlay metrology, Optical alignment, Optical lithography, Thermal deformation, Deformation, Film thickness, Etching, Miniaturization

Read Abstract +

BackgroundHeterogeneous integration has been used to enhance functionality and improve operation performance by integrating separately manufactured components into system in package. To realize this high density and high performance system, continuous miniaturization is required for Cu interconnect wiring on an organic substrate.AimThe aim is to clarify the lithography issues for 5 μm L/S Cu wiring formation in the next generation. Lithographic performances, such as resolution, depth of focus (DOF), and overlay accuracy, are evaluated on an organic substrate, and the improvement of lithographic process margin is also investigated. Here, the exposure field of stepper is wide, that is, 62500 mm2.ApproachThe DOF is calculated and evaluated based on the negative dry film resist with thickness of 15 μm. Overlay accuracy was measured, using a multipoint alignment procedure.Result and ConclusionFirst result is patterning. For realizing 5 μm L/S Cu wiring in semi-additive process, resist patterning of 3.5/6.5 or 3/7 μm L/S is required due to seed Cu layer etching. Under two projection optics conditions (lens C: 5 μm L/S resolution and lens D: 3 μm L/S resolution), the process margin values of 3.5/6.5 and 3/7 μm L/S were evaluated. It was found that the process margin of 3.5/6.5 μm L/S is ±40 μm (lens C)/ ±30 μm (lens D), and the process margin of 3/7 μm L/S is ±10 μm (lens C) ±20 μm (lens D). These process margin values are enough for 5 μm L/S Cu wiring formation. And the second result is overlay. The overlay of the lithography equipment is 1.0 μm or less for deformed substrates while maintaining productivity by simultaneous multipoint measurement.

Proceedings Article | 23 March 2020 Paper

Investigating the fine line lithography process on the large-size organic panels for advanced packaging and development

Naoya Sohara, Ryotaro Takahashi, Hirosuke Takamatsu

Proceedings Volume 11327, 113270N (2020) https://doi.org/10.1117/12.2551577

KEYWORDS: Packaging, Optical lithography, Lithography, Copper, Silicon, Semiconductors, Scanning electron microscopy, Photomasks, Metals, Wet etching

Read Abstract +

Up to now, Miniaturization has been the main drive for improving the performance of semiconductors. And higher performance of semiconductor has been the drive for applications. But miniaturization has become increasingly difficult due to increased power consumption and variations in characteristics. In order to solve these problems, by not only miniaturization of semiconductor elements, but also heterogeneous integration of the IC chips with advanced packaging technology, the higher performance and functionality improvement of the entire system has been proposed and developed. For example, the integrated SoC of the GPU and the High Bandwidth Memory (HBM) via Silicon-interposer(2.5D) are manufactured for high-performance computing, like machine learning and deep learning. With this flow, the wiring of the organic substrate package is also becoming finer line. Furthermore, it is necessary to increase the size of the die. In the following packaging trend, requiring of the Lithography equipment and process for advanced packaging is not only fine wiring to integrate but also large area exposure. In this presentation, we will show the exposure results of various dry film resist by the panel-size lithography system and inspect the state of resolution. The shot size of the lithography system is 250*250mm. Finally, we will discuss the next lithography system and process from the perspective of lithography optics and process.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years